Graphene field-effect transistors as THz detectors: Distinguishing between resistive self-mixing and the hot-carrier thermoelectric effect

F. Ludwig; A. Generalov; J. Holstein; A. Murros; K. Viisanen; M. Prunnila; H. G. Roskos

doi:10.1109/IRMMW-THz57677.2023.10299023

Graphene field-effect transistors as THz detectors: Distinguishing between resistive self-mixing and the hot-carrier thermoelectric effect

F. Ludwig
, A. Generalov
, J. Holstein
, A. Murros
, K. Viisanen
, M. Prunnila
, H. G. Roskos

Goethe University Frankfurt

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

Graphene-based detectors of THz radiation - despite their improvement over the years - continue to exhibit a lower sensitivity than detectors made from other material systems. In order to gain a deeper understanding of some of the detection processes and their constraints, we analyze here experimentally and by simulations the operation of graphene TeraFETs, detectors based on rectification in antenna-coupled field effect transistors, over the frequency range 0.1-1.2 THz. The devices were fabricated with an advanced wafer-scale process technology. It is well-known that two detection mechanisms contribute, resistive self-mixing and the photothermoelectric effect. We determine the respective contributions to the responsivity and their frequency dependencies, put the results into perspective with competing technologies, and suggest ways to improve detector performance.

Original language	English
Title of host publication	IRMMW-THz 2023
Subtitle of host publication	48th Conference on Infrared, Millimeter, and Terahertz Waves
Publisher	IEEE Institute of Electrical and Electronic Engineers
Number of pages	1
ISBN (Electronic)	9798350336603
DOIs	https://doi.org/10.1109/IRMMW-THz57677.2023.10299023
Publication status	Published - 2023
MoE publication type	A4 Article in a conference publication
Event	48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 - Montreal, Canada Duration: 17 Sept 2023 → 22 Sept 2023

Publication series

Series	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN	2162-2027

Conference

Conference	48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023
Country/Territory	Canada
City	Montreal
Period	17/09/23 → 22/09/23

Funding

Funding by DFG (RO 770/40), by Academy of Finland (343842), by Technology Industries of Finland Centennial Foundation and Jane and Aatos Erkko Foundation are gratefully acknowledged.

Access to Document

10.1109/IRMMW-THz57677.2023.10299023

Cite this

Ludwig, F., Generalov, A., Holstein, J., Murros, A., Viisanen, K., Prunnila, M., & Roskos, H. G. (2023). Graphene field-effect transistors as THz detectors: Distinguishing between resistive self-mixing and the hot-carrier thermoelectric effect. In IRMMW-THz 2023: 48th Conference on Infrared, Millimeter, and Terahertz Waves IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/IRMMW-THz57677.2023.10299023

Ludwig, F. ; Generalov, A. ; Holstein, J. et al. / Graphene field-effect transistors as THz detectors : Distinguishing between resistive self-mixing and the hot-carrier thermoelectric effect. IRMMW-THz 2023: 48th Conference on Infrared, Millimeter, and Terahertz Waves. IEEE Institute of Electrical and Electronic Engineers, 2023. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

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title = "Graphene field-effect transistors as THz detectors: Distinguishing between resistive self-mixing and the hot-carrier thermoelectric effect",

abstract = "Graphene-based detectors of THz radiation - despite their improvement over the years - continue to exhibit a lower sensitivity than detectors made from other material systems. In order to gain a deeper understanding of some of the detection processes and their constraints, we analyze here experimentally and by simulations the operation of graphene TeraFETs, detectors based on rectification in antenna-coupled field effect transistors, over the frequency range 0.1-1.2 THz. The devices were fabricated with an advanced wafer-scale process technology. It is well-known that two detection mechanisms contribute, resistive self-mixing and the photothermoelectric effect. We determine the respective contributions to the responsivity and their frequency dependencies, put the results into perspective with competing technologies, and suggest ways to improve detector performance.",

author = "F. Ludwig and A. Generalov and J. Holstein and A. Murros and K. Viisanen and M. Prunnila and Roskos, \{H. G.\}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 ; Conference date: 17-09-2023 Through 22-09-2023",

year = "2023",

doi = "10.1109/IRMMW-THz57677.2023.10299023",

language = "English",

series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

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}

Ludwig, F, Generalov, A, Holstein, J, Murros, A, Viisanen, K, Prunnila, M & Roskos, HG 2023, Graphene field-effect transistors as THz detectors: Distinguishing between resistive self-mixing and the hot-carrier thermoelectric effect. in IRMMW-THz 2023: 48th Conference on Infrared, Millimeter, and Terahertz Waves. IEEE Institute of Electrical and Electronic Engineers, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023, Montreal, Quebec, Canada, 17/09/23. https://doi.org/10.1109/IRMMW-THz57677.2023.10299023

Graphene field-effect transistors as THz detectors: Distinguishing between resistive self-mixing and the hot-carrier thermoelectric effect. / Ludwig, F.; Generalov, A.; Holstein, J. et al.
IRMMW-THz 2023: 48th Conference on Infrared, Millimeter, and Terahertz Waves. IEEE Institute of Electrical and Electronic Engineers, 2023. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Graphene field-effect transistors as THz detectors

T2 - 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023

AU - Ludwig, F.

AU - Generalov, A.

AU - Holstein, J.

AU - Murros, A.

AU - Viisanen, K.

AU - Prunnila, M.

AU - Roskos, H. G.

PY - 2023

Y1 - 2023

N2 - Graphene-based detectors of THz radiation - despite their improvement over the years - continue to exhibit a lower sensitivity than detectors made from other material systems. In order to gain a deeper understanding of some of the detection processes and their constraints, we analyze here experimentally and by simulations the operation of graphene TeraFETs, detectors based on rectification in antenna-coupled field effect transistors, over the frequency range 0.1-1.2 THz. The devices were fabricated with an advanced wafer-scale process technology. It is well-known that two detection mechanisms contribute, resistive self-mixing and the photothermoelectric effect. We determine the respective contributions to the responsivity and their frequency dependencies, put the results into perspective with competing technologies, and suggest ways to improve detector performance.

AB - Graphene-based detectors of THz radiation - despite their improvement over the years - continue to exhibit a lower sensitivity than detectors made from other material systems. In order to gain a deeper understanding of some of the detection processes and their constraints, we analyze here experimentally and by simulations the operation of graphene TeraFETs, detectors based on rectification in antenna-coupled field effect transistors, over the frequency range 0.1-1.2 THz. The devices were fabricated with an advanced wafer-scale process technology. It is well-known that two detection mechanisms contribute, resistive self-mixing and the photothermoelectric effect. We determine the respective contributions to the responsivity and their frequency dependencies, put the results into perspective with competing technologies, and suggest ways to improve detector performance.

UR - https://www.scopus.com/pages/publications/85177655005

U2 - 10.1109/IRMMW-THz57677.2023.10299023

DO - 10.1109/IRMMW-THz57677.2023.10299023

M3 - Conference article in proceedings

AN - SCOPUS:85177655005

T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

BT - IRMMW-THz 2023

PB - IEEE Institute of Electrical and Electronic Engineers

Y2 - 17 September 2023 through 22 September 2023

ER -

Ludwig F, Generalov A, Holstein J, Murros A, Viisanen K, Prunnila M et al. Graphene field-effect transistors as THz detectors: Distinguishing between resistive self-mixing and the hot-carrier thermoelectric effect. In IRMMW-THz 2023: 48th Conference on Infrared, Millimeter, and Terahertz Waves. IEEE Institute of Electrical and Electronic Engineers. 2023. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). doi: 10.1109/IRMMW-THz57677.2023.10299023

Graphene field-effect transistors as THz detectors: Distinguishing between resistive self-mixing and the hot-carrier thermoelectric effect

Abstract

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Conference

Funding

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Cite this

Graphene field-effect transistors as THz detectors: Distinguishing between resistive self-mixing and the hot-carrier thermoelectric effect

Abstract

Publication series

Conference

Funding

Access to Document

Other files and links

Fingerprint

Equipment

OtaNano

Cite this