Graphene on ZrO2 and Al2O3 gate dielectrics

Sanna Arpiainen, J. Niinistö, Miika Soikkeli, Mika Prunnila, M. Ritala, M. Leskelä, Jouni Ahopelto

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

Abstract

The selection and preparation of the dielectric is essential for graphene electronics and photonics. Industrial DRAM devices rely on ZrO2/Al2O3/ZrO2 (ZAZ)-structures as capacitor dielectrics with 2.5 nm/1 nm/2.5 nm thickness. Thin Al2O3 in between the ZrO2 films interrupts the grain boundary evolution through the film which minimizes both the leakage current and the surface roughness, but maintains the high effective dielectric constant. This would be favorable combination also in graphene devices. In addition, high-k dielectrics such as HfO2 and ZrO2 are superior in screening the charged impurities, although the low surface optical (SO) phonon energies significantly limit the mobility in graphene above cryogenic temperatures.
Original languageEnglish
Title of host publicationBALD2014 Abstract book
Publication statusPublished - 2014
MoE publication typeNot Eligible
Event12th International Baltic Conference on Atomic Layer Deposition, Baltic ALD 2014 - Helsinki, Finland
Duration: 12 May 201413 May 2014
Conference number: 12
http://www.aldcoe.fi/bald2014/program.pdf (Program)
http://www.aldcoe.fi/bald2014/posters.pdf (Posters)

Conference

Conference12th International Baltic Conference on Atomic Layer Deposition, Baltic ALD 2014
Abbreviated titleBaltic ALD 2014
CountryFinland
CityHelsinki
Period12/05/1413/05/14
OtherAbstracts reviewed and published.
Internet address

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graphene
cryogenic temperature
capacitors
surface roughness
leakage
screening
grain boundaries
photonics
permittivity
impurities
preparation
electronics
energy

Keywords

  • graphene
  • dielectric
  • mobility

Cite this

Arpiainen, S., Niinistö, J., Soikkeli, M., Prunnila, M., Ritala, M., Leskelä, M., & Ahopelto, J. (2014). Graphene on ZrO2 and Al2O3 gate dielectrics. In BALD2014 Abstract book
Arpiainen, Sanna ; Niinistö, J. ; Soikkeli, Miika ; Prunnila, Mika ; Ritala, M. ; Leskelä, M. ; Ahopelto, Jouni. / Graphene on ZrO2 and Al2O3 gate dielectrics. BALD2014 Abstract book. 2014.
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abstract = "The selection and preparation of the dielectric is essential for graphene electronics and photonics. Industrial DRAM devices rely on ZrO2/Al2O3/ZrO2 (ZAZ)-structures as capacitor dielectrics with 2.5 nm/1 nm/2.5 nm thickness. Thin Al2O3 in between the ZrO2 films interrupts the grain boundary evolution through the film which minimizes both the leakage current and the surface roughness, but maintains the high effective dielectric constant. This would be favorable combination also in graphene devices. In addition, high-k dielectrics such as HfO2 and ZrO2 are superior in screening the charged impurities, although the low surface optical (SO) phonon energies significantly limit the mobility in graphene above cryogenic temperatures.",
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author = "Sanna Arpiainen and J. Niinist{\"o} and Miika Soikkeli and Mika Prunnila and M. Ritala and M. Leskel{\"a} and Jouni Ahopelto",
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Arpiainen, S, Niinistö, J, Soikkeli, M, Prunnila, M, Ritala, M, Leskelä, M & Ahopelto, J 2014, Graphene on ZrO2 and Al2O3 gate dielectrics. in BALD2014 Abstract book. 12th International Baltic Conference on Atomic Layer Deposition, Baltic ALD 2014, Helsinki, Finland, 12/05/14.

Graphene on ZrO2 and Al2O3 gate dielectrics. / Arpiainen, Sanna; Niinistö, J.; Soikkeli, Miika; Prunnila, Mika; Ritala, M.; Leskelä, M.; Ahopelto, Jouni.

BALD2014 Abstract book. 2014.

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

TY - CHAP

T1 - Graphene on ZrO2 and Al2O3 gate dielectrics

AU - Arpiainen, Sanna

AU - Niinistö, J.

AU - Soikkeli, Miika

AU - Prunnila, Mika

AU - Ritala, M.

AU - Leskelä, M.

AU - Ahopelto, Jouni

N1 - HUO: Poster presentation Project code: 73337

PY - 2014

Y1 - 2014

N2 - The selection and preparation of the dielectric is essential for graphene electronics and photonics. Industrial DRAM devices rely on ZrO2/Al2O3/ZrO2 (ZAZ)-structures as capacitor dielectrics with 2.5 nm/1 nm/2.5 nm thickness. Thin Al2O3 in between the ZrO2 films interrupts the grain boundary evolution through the film which minimizes both the leakage current and the surface roughness, but maintains the high effective dielectric constant. This would be favorable combination also in graphene devices. In addition, high-k dielectrics such as HfO2 and ZrO2 are superior in screening the charged impurities, although the low surface optical (SO) phonon energies significantly limit the mobility in graphene above cryogenic temperatures.

AB - The selection and preparation of the dielectric is essential for graphene electronics and photonics. Industrial DRAM devices rely on ZrO2/Al2O3/ZrO2 (ZAZ)-structures as capacitor dielectrics with 2.5 nm/1 nm/2.5 nm thickness. Thin Al2O3 in between the ZrO2 films interrupts the grain boundary evolution through the film which minimizes both the leakage current and the surface roughness, but maintains the high effective dielectric constant. This would be favorable combination also in graphene devices. In addition, high-k dielectrics such as HfO2 and ZrO2 are superior in screening the charged impurities, although the low surface optical (SO) phonon energies significantly limit the mobility in graphene above cryogenic temperatures.

KW - graphene

KW - dielectric

KW - mobility

M3 - Conference abstract in proceedings

BT - BALD2014 Abstract book

ER -

Arpiainen S, Niinistö J, Soikkeli M, Prunnila M, Ritala M, Leskelä M et al. Graphene on ZrO2 and Al2O3 gate dielectrics. In BALD2014 Abstract book. 2014