Graphene on ZrO2 and Al2O3 gate dielectrics

Sanna Arpiainen, J. Niinistö, Miika Soikkeli, Mika Prunnila, M. Ritala, M. Leskelä, Jouni Ahopelto

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific


The selection and preparation of the dielectric is essential for graphene electronics and photonics. Industrial DRAM devices rely on ZrO2/Al2O3/ZrO2 (ZAZ)-structures as capacitor dielectrics with 2.5 nm/1 nm/2.5 nm thickness. Thin Al2O3 in between the ZrO2 films interrupts the grain boundary evolution through the film which minimizes both the leakage current and the surface roughness, but maintains the high effective dielectric constant. This would be favorable combination also in graphene devices. In addition, high-k dielectrics such as HfO2 and ZrO2 are superior in screening the charged impurities, although the low surface optical (SO) phonon energies significantly limit the mobility in graphene above cryogenic temperatures.
Original languageEnglish
Title of host publicationBALD2014 Abstract book
Publication statusPublished - 2014
MoE publication typeNot Eligible
Event12th International Baltic Conference on Atomic Layer Deposition, Baltic ALD 2014 - Helsinki, Finland
Duration: 12 May 201413 May 2014
Conference number: 12 (Program) (Posters)


Conference12th International Baltic Conference on Atomic Layer Deposition, Baltic ALD 2014
Abbreviated titleBaltic ALD 2014
OtherAbstracts reviewed and published.
Internet address


  • graphene
  • dielectric
  • mobility


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