Graphene on ZrO2 and Al2O3 gate dielectrics

Sanna Arpiainen; J. Niinistö; Miika Soikkeli; Mika Prunnila; M. Ritala; M. Leskelä; Jouni Ahopelto

Graphene on ZrO2 and Al2O3 gate dielectrics

Sanna Arpiainen, J. Niinistö, Miika Soikkeli, Mika Prunnila, M. Ritala, M. Leskelä, Jouni Ahopelto

VTT Technical Research Centre of Finland

University of Helsinki

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Scientific

Abstract

The selection and preparation of the dielectric is essential for graphene electronics and photonics. Industrial DRAM devices rely on ZrO2/Al2O3/ZrO2 (ZAZ)-structures as capacitor dielectrics with 2.5 nm/1 nm/2.5 nm thickness. Thin Al2O3 in between the ZrO2 films interrupts the grain boundary evolution through the film which minimizes both the leakage current and the surface roughness, but maintains the high effective dielectric constant. This would be favorable combination also in graphene devices. In addition, high-k dielectrics such as HfO2 and ZrO2 are superior in screening the charged impurities, although the low surface optical (SO) phonon energies significantly limit the mobility in graphene above cryogenic temperatures.

Original language	English
Title of host publication	BALD2014 Abstract book
Publication status	Published - 2014
MoE publication type	Not Eligible
Event	12th International Baltic Conference on Atomic Layer Deposition, Baltic ALD 2014 - Helsinki, Finland Duration: 12 May 2014 → 13 May 2014 Conference number: 12 http://www.aldcoe.fi/bald2014/program.pdf (Program) http://www.aldcoe.fi/bald2014/posters.pdf (Posters)

Conference

Conference	12th International Baltic Conference on Atomic Layer Deposition, Baltic ALD 2014
Abbreviated title	Baltic ALD 2014
Country/Territory	Finland
City	Helsinki
Period	12/05/14 → 13/05/14
Other	Abstracts reviewed and published.
Internet address	http://www.aldcoe.fi/bald2014/program.pdf (Program) http://www.aldcoe.fi/bald2014/posters.pdf (Posters)

Keywords

graphene
dielectric
mobility

Cite this

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title = "Graphene on ZrO2 and Al2O3 gate dielectrics",

abstract = "The selection and preparation of the dielectric is essential for graphene electronics and photonics. Industrial DRAM devices rely on ZrO2/Al2O3/ZrO2 (ZAZ)-structures as capacitor dielectrics with 2.5 nm/1 nm/2.5 nm thickness. Thin Al2O3 in between the ZrO2 films interrupts the grain boundary evolution through the film which minimizes both the leakage current and the surface roughness, but maintains the high effective dielectric constant. This would be favorable combination also in graphene devices. In addition, high-k dielectrics such as HfO2 and ZrO2 are superior in screening the charged impurities, although the low surface optical (SO) phonon energies significantly limit the mobility in graphene above cryogenic temperatures.",

keywords = "graphene, dielectric, mobility",

author = "Sanna Arpiainen and J. Niinist{\"o} and Miika Soikkeli and Mika Prunnila and M. Ritala and M. Leskel{\"a} and Jouni Ahopelto",

note = "HUO: Poster presentation Project code: 73337; 12th International Baltic Conference on Atomic Layer Deposition, Baltic ALD 2014, Baltic ALD 2014 ; Conference date: 12-05-2014 Through 13-05-2014",

year = "2014",

language = "English",

booktitle = "BALD2014 Abstract book",

url = "http://www.aldcoe.fi/bald2014/program.pdf, http://www.aldcoe.fi/bald2014/posters.pdf",

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TY - CHAP

T1 - Graphene on ZrO2 and Al2O3 gate dielectrics

AU - Arpiainen, Sanna

AU - Niinistö, J.

AU - Soikkeli, Miika

AU - Prunnila, Mika

AU - Ritala, M.

AU - Leskelä, M.

AU - Ahopelto, Jouni

N1 - Conference code: 12

PY - 2014

Y1 - 2014

N2 - The selection and preparation of the dielectric is essential for graphene electronics and photonics. Industrial DRAM devices rely on ZrO2/Al2O3/ZrO2 (ZAZ)-structures as capacitor dielectrics with 2.5 nm/1 nm/2.5 nm thickness. Thin Al2O3 in between the ZrO2 films interrupts the grain boundary evolution through the film which minimizes both the leakage current and the surface roughness, but maintains the high effective dielectric constant. This would be favorable combination also in graphene devices. In addition, high-k dielectrics such as HfO2 and ZrO2 are superior in screening the charged impurities, although the low surface optical (SO) phonon energies significantly limit the mobility in graphene above cryogenic temperatures.

AB - The selection and preparation of the dielectric is essential for graphene electronics and photonics. Industrial DRAM devices rely on ZrO2/Al2O3/ZrO2 (ZAZ)-structures as capacitor dielectrics with 2.5 nm/1 nm/2.5 nm thickness. Thin Al2O3 in between the ZrO2 films interrupts the grain boundary evolution through the film which minimizes both the leakage current and the surface roughness, but maintains the high effective dielectric constant. This would be favorable combination also in graphene devices. In addition, high-k dielectrics such as HfO2 and ZrO2 are superior in screening the charged impurities, although the low surface optical (SO) phonon energies significantly limit the mobility in graphene above cryogenic temperatures.

KW - graphene

KW - dielectric

KW - mobility

M3 - Conference abstract in proceedings

BT - BALD2014 Abstract book

T2 - 12th International Baltic Conference on Atomic Layer Deposition, Baltic ALD 2014

Y2 - 12 May 2014 through 13 May 2014

ER -

Graphene on ZrO2 and Al2O3 gate dielectrics

Abstract

Conference

Keywords

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