Graphene TeraFETs: Effect of gated channel region on THz performance

Andrey A. Generalov, Florian Ludwig, Jakob Holstein, Anton Murros, Miika Soikkeli, Hartmut G. Roskos, Sanna Arpiainen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

We investigate the dependence of the responsivity of antenna-coupled graphene field-effect transistors (graphene TeraFETs) on the transistor's channel geometry. The graphene TeraFETs are fabricated using a wafer-scale CVD process, and the measurements of the detectors of various geometries are performed at 0.1-1.2 THz. The measured data are compared with existing theoretical predictions and help to improve the accuracy of graphene TeraFET responsivity models.

Original languageEnglish
Title of host publicationIRMMW-THz 2022
Subtitle of host publication47th International Conference on Infrared, Millimeter and Terahertz Waves
PublisherIEEE Institute of Electrical and Electronic Engineers
Number of pages2
ISBN (Electronic)9781728194271
DOIs
Publication statusPublished - 26 Sep 2022
MoE publication typeA4 Article in a conference publication
Event47th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2022 - Delft, Netherlands
Duration: 28 Aug 20222 Sep 2022

Publication series

SeriesInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2022-August
ISSN2162-2027

Conference

Conference47th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2022
Country/TerritoryNetherlands
CityDelft
Period28/08/222/09/22

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