Graphene TeraFETs: Effect of gated channel region on THz performance

Andrey A. Generalov, Florian Ludwig, Jakob Holstein, Anton Murros, Miika Soikkeli, Hartmut G. Roskos, Sanna Arpiainen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    We investigate the dependence of the responsivity of antenna-coupled graphene field-effect transistors (graphene TeraFETs) on the transistor's channel geometry. The graphene TeraFETs are fabricated using a wafer-scale CVD process, and the measurements of the detectors of various geometries are performed at 0.1-1.2 THz. The measured data are compared with existing theoretical predictions and help to improve the accuracy of graphene TeraFET responsivity models.

    Original languageEnglish
    Title of host publicationIRMMW-THz 2022
    Subtitle of host publication47th International Conference on Infrared, Millimeter and Terahertz Waves
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Number of pages2
    ISBN (Electronic)9781728194271
    DOIs
    Publication statusPublished - 26 Sept 2022
    MoE publication typeA4 Article in a conference publication
    Event47th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2022 - Delft, Netherlands
    Duration: 28 Aug 20222 Sept 2022

    Publication series

    SeriesInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
    Volume2022-August
    ISSN2162-2027

    Conference

    Conference47th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2022
    Country/TerritoryNetherlands
    CityDelft
    Period28/08/222/09/22

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