Graphene TeraFETs: Effect of gated channel region on THz performance

Andrey A. Generalov; Florian Ludwig; Jakob Holstein; Anton Murros; Miika Soikkeli; Hartmut G. Roskos; Sanna Arpiainen

doi:10.1109/IRMMW-THz50927.2022.9895901

Graphene TeraFETs: Effect of gated channel region on THz performance

Andrey A. Generalov^*
, Florian Ludwig
, Jakob Holstein
, Anton Murros
, Miika Soikkeli
, Hartmut G. Roskos
, Sanna Arpiainen

^*Corresponding author for this work

Goethe University Frankfurt

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

We investigate the dependence of the responsivity of antenna-coupled graphene field-effect transistors (graphene TeraFETs) on the transistor's channel geometry. The graphene TeraFETs are fabricated using a wafer-scale CVD process, and the measurements of the detectors of various geometries are performed at 0.1-1.2 THz. The measured data are compared with existing theoretical predictions and help to improve the accuracy of graphene TeraFET responsivity models.

Original language	English
Title of host publication	IRMMW-THz 2022
Subtitle of host publication	47th International Conference on Infrared, Millimeter and Terahertz Waves
Publisher	IEEE Institute of Electrical and Electronic Engineers
Number of pages	2
ISBN (Electronic)	9781728194271
DOIs	https://doi.org/10.1109/IRMMW-THz50927.2022.9895901
Publication status	Published - 26 Sept 2022
MoE publication type	A4 Article in a conference publication
Event	47th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2022 - Delft, Netherlands Duration: 28 Aug 2022 → 2 Sept 2022

Publication series

Series	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume	2022-August
ISSN	2162-2027

Conference

Conference	47th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2022
Country/Territory	Netherlands
City	Delft
Period	28/08/22 → 2/09/22

Funding

V. ACKNOWLEDGEMENTS This work is partly funded by DFG grant RO 770/40-2 (Germany), and partly by the Academy of Finland (grant nos. 343842 and 314809).

Access to Document

10.1109/IRMMW-THz50927.2022.9895901

Cite this

Generalov, A. A., Ludwig, F., Holstein, J., Murros, A., Soikkeli, M., Roskos, H. G., & Arpiainen, S. (2022). Graphene TeraFETs: Effect of gated channel region on THz performance. In IRMMW-THz 2022: 47th International Conference on Infrared, Millimeter and Terahertz Waves IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/IRMMW-THz50927.2022.9895901

Generalov, Andrey A. ; Ludwig, Florian ; Holstein, Jakob et al. / Graphene TeraFETs : Effect of gated channel region on THz performance. IRMMW-THz 2022: 47th International Conference on Infrared, Millimeter and Terahertz Waves. IEEE Institute of Electrical and Electronic Engineers, 2022. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Vol. 2022-August).

@inproceedings{f74b0ec9ec384567a45fc73479b42101,

title = "Graphene TeraFETs: Effect of gated channel region on THz performance",

abstract = "We investigate the dependence of the responsivity of antenna-coupled graphene field-effect transistors (graphene TeraFETs) on the transistor's channel geometry. The graphene TeraFETs are fabricated using a wafer-scale CVD process, and the measurements of the detectors of various geometries are performed at 0.1-1.2 THz. The measured data are compared with existing theoretical predictions and help to improve the accuracy of graphene TeraFET responsivity models.",

author = "Generalov, \{Andrey A.\} and Florian Ludwig and Jakob Holstein and Anton Murros and Miika Soikkeli and Roskos, \{Hartmut G.\} and Sanna Arpiainen",

note = "Funding Information: V. ACKNOWLEDGEMENTS This work is partly funded by DFG grant RO 770/40-2 (Germany), and partly by the Academy of Finland (grant nos. 343842 and 314809). Publisher Copyright: {\textcopyright} 2022 IEEE.; 47th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2022 ; Conference date: 28-08-2022 Through 02-09-2022",

year = "2022",

month = sep,

day = "26",

doi = "10.1109/IRMMW-THz50927.2022.9895901",

language = "English",

series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

booktitle = "IRMMW-THz 2022",

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}

Generalov, AA, Ludwig, F, Holstein, J, Murros, A , Soikkeli, M, Roskos, HG & Arpiainen, S 2022, Graphene TeraFETs: Effect of gated channel region on THz performance. in IRMMW-THz 2022: 47th International Conference on Infrared, Millimeter and Terahertz Waves. IEEE Institute of Electrical and Electronic Engineers, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2022-August, 47th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2022, Delft, Netherlands, 28/08/22. https://doi.org/10.1109/IRMMW-THz50927.2022.9895901

Graphene TeraFETs: Effect of gated channel region on THz performance. / Generalov, Andrey A.; Ludwig, Florian; Holstein, Jakob et al.
IRMMW-THz 2022: 47th International Conference on Infrared, Millimeter and Terahertz Waves. IEEE Institute of Electrical and Electronic Engineers, 2022. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Vol. 2022-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Generalov, Andrey A.

AU - Ludwig, Florian

AU - Holstein, Jakob

AU - Murros, Anton

AU - Soikkeli, Miika

AU - Roskos, Hartmut G.

AU - Arpiainen, Sanna

N1 - Funding Information: V. ACKNOWLEDGEMENTS This work is partly funded by DFG grant RO 770/40-2 (Germany), and partly by the Academy of Finland (grant nos. 343842 and 314809). Publisher Copyright: © 2022 IEEE.

PY - 2022/9/26

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N2 - We investigate the dependence of the responsivity of antenna-coupled graphene field-effect transistors (graphene TeraFETs) on the transistor's channel geometry. The graphene TeraFETs are fabricated using a wafer-scale CVD process, and the measurements of the detectors of various geometries are performed at 0.1-1.2 THz. The measured data are compared with existing theoretical predictions and help to improve the accuracy of graphene TeraFET responsivity models.

AB - We investigate the dependence of the responsivity of antenna-coupled graphene field-effect transistors (graphene TeraFETs) on the transistor's channel geometry. The graphene TeraFETs are fabricated using a wafer-scale CVD process, and the measurements of the detectors of various geometries are performed at 0.1-1.2 THz. The measured data are compared with existing theoretical predictions and help to improve the accuracy of graphene TeraFET responsivity models.

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M3 - Conference article in proceedings

AN - SCOPUS:85139833626

T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

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PB - IEEE Institute of Electrical and Electronic Engineers

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Generalov AA, Ludwig F, Holstein J, Murros A , Soikkeli M, Roskos HG et al. Graphene TeraFETs: Effect of gated channel region on THz performance. In IRMMW-THz 2022: 47th International Conference on Infrared, Millimeter and Terahertz Waves. IEEE Institute of Electrical and Electronic Engineers. 2022. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Vol. 2022-August). doi: 10.1109/IRMMW-THz50927.2022.9895901

Graphene TeraFETs: Effect of gated channel region on THz performance

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