Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes

L. Hiltunen; Hannu Kattelus; Markku Leskelä; M. Mäkelä; Lauri Niinistö; E. Nykänen; P. Soininen; Marja Tiitta

doi:10.1016/0254-0584(91)90073-4

Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes

L. Hiltunen, Hannu Kattelus, Markku Leskelä, M. Mäkelä, Lauri Niinistö (Corresponding Author), E. Nykänen, P. Soininen, Marja Tiitta

VTT Technical Research Centre of Finland

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81 Citations (Scopus)

Abstract

Aluminium oxide thin films were prepared by the ALE process using AICI₃ and A1(OR)₃ (R = Et,Pr) as aluminium source and H₂O, O₂ or various aliphatic alcohols as oxygen source. The process was also operated in the CVD mode and the deposition rates and mechanisms were compared. The films were characterized by Auger and XRF spectrometries for trace element impurities while the chloride residues were quantitatively determined by chemical analysis. FTIR was used to study the residual OH groups. The measured electrical constants and environmental stability indicate that the films are suitable for practical applications as insulating and protective layers.

Original language	English
Pages (from-to)	379-388
Journal	Materials Chemistry and Physics
Volume	28
Issue number	4
DOIs	https://doi.org/10.1016/0254-0584(91)90073-4
Publication status	Published - 1991
MoE publication type	A1 Journal article-refereed

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Hiltunen, L., Kattelus, H., Leskelä, M., Mäkelä, M., Niinistö, L., Nykänen, E., Soininen, P., & Tiitta, M. (1991). Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes. Materials Chemistry and Physics, 28(4), 379-388. https://doi.org/10.1016/0254-0584(91)90073-4

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title = "Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes",

abstract = "Aluminium oxide thin films were prepared by the ALE process using AICI3 and A1(OR)3 (R = Et,Pr) as aluminium source and H2O, O2 or various aliphatic alcohols as oxygen source. The process was also operated in the CVD mode and the deposition rates and mechanisms were compared. The films were characterized by Auger and XRF spectrometries for trace element impurities while the chloride residues were quantitatively determined by chemical analysis. FTIR was used to study the residual OH groups. The measured electrical constants and environmental stability indicate that the films are suitable for practical applications as insulating and protective layers.",

author = "L. Hiltunen and Hannu Kattelus and Markku Leskel{\"a} and M. M{\"a}kel{\"a} and Lauri Niinist{\"o} and E. Nyk{\"a}nen and P. Soininen and Marja Tiitta",

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year = "1991",

doi = "10.1016/0254-0584(91)90073-4",

language = "English",

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pages = "379--388",

journal = "Materials Chemistry and Physics",

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Hiltunen, L, Kattelus, H, Leskelä, M, Mäkelä, M, Niinistö, L, Nykänen, E, Soininen, P & Tiitta, M 1991, 'Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes', Materials Chemistry and Physics, vol. 28, no. 4, pp. 379-388. https://doi.org/10.1016/0254-0584(91)90073-4

Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes. / Hiltunen, L.; Kattelus, Hannu; Leskelä, Markku et al.
In: Materials Chemistry and Physics, Vol. 28, No. 4, 1991, p. 379-388.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes

AU - Hiltunen, L.

AU - Kattelus, Hannu

AU - Leskelä, Markku

AU - Mäkelä, M.

AU - Niinistö, Lauri

AU - Nykänen, E.

AU - Soininen, P.

AU - Tiitta, Marja

N1 - Project code: puo1003

PY - 1991

Y1 - 1991

N2 - Aluminium oxide thin films were prepared by the ALE process using AICI3 and A1(OR)3 (R = Et,Pr) as aluminium source and H2O, O2 or various aliphatic alcohols as oxygen source. The process was also operated in the CVD mode and the deposition rates and mechanisms were compared. The films were characterized by Auger and XRF spectrometries for trace element impurities while the chloride residues were quantitatively determined by chemical analysis. FTIR was used to study the residual OH groups. The measured electrical constants and environmental stability indicate that the films are suitable for practical applications as insulating and protective layers.

AB - Aluminium oxide thin films were prepared by the ALE process using AICI3 and A1(OR)3 (R = Et,Pr) as aluminium source and H2O, O2 or various aliphatic alcohols as oxygen source. The process was also operated in the CVD mode and the deposition rates and mechanisms were compared. The films were characterized by Auger and XRF spectrometries for trace element impurities while the chloride residues were quantitatively determined by chemical analysis. FTIR was used to study the residual OH groups. The measured electrical constants and environmental stability indicate that the films are suitable for practical applications as insulating and protective layers.

U2 - 10.1016/0254-0584(91)90073-4

DO - 10.1016/0254-0584(91)90073-4

M3 - Article

SN - 0254-0584

VL - 28

SP - 379

EP - 388

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 4

ER -

Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes

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