Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes

L. Hiltunen, Hannu Kattelus, Markku Leskelä, M. Mäkelä, Lauri Niinistö (Corresponding Author), E. Nykänen, P. Soininen, Marja Tiitta

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Aluminium oxide thin films were prepared by the ALE process using AICI3 and A1(OR)3 (R = Et,Pr) as aluminium source and H2O, O2 or various aliphatic alcohols as oxygen source. The process was also operated in the CVD mode and the deposition rates and mechanisms were compared. The films were characterized by Auger and XRF spectrometries for trace element impurities while the chloride residues were quantitatively determined by chemical analysis. FTIR was used to study the residual OH groups. The measured electrical constants and environmental stability indicate that the films are suitable for practical applications as insulating and protective layers.

Original languageEnglish
Pages (from-to)379 - 388
Number of pages10
JournalMaterials Chemistry and Physics
Volume28
Issue number4
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

Fingerprint

Atomic layer epitaxy
Aluminum Oxide
atomic layer epitaxy
Oxide films
Chemical vapor deposition
aluminum oxides
vapor deposition
Aluminum
Thin films
Trace Elements
thin films
Trace elements
Deposition rates
chemical analysis
trace elements
Spectrometry
Chlorides
alcohols
Alcohols
chlorides

Cite this

Hiltunen, L. ; Kattelus, Hannu ; Leskelä, Markku ; Mäkelä, M. ; Niinistö, Lauri ; Nykänen, E. ; Soininen, P. ; Tiitta, Marja. / Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes. In: Materials Chemistry and Physics. 1991 ; Vol. 28, No. 4. pp. 379 - 388.
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Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes. / Hiltunen, L.; Kattelus, Hannu; Leskelä, Markku; Mäkelä, M.; Niinistö, Lauri (Corresponding Author); Nykänen, E.; Soininen, P.; Tiitta, Marja.

In: Materials Chemistry and Physics, Vol. 28, No. 4, 1991, p. 379 - 388.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes

AU - Hiltunen, L.

AU - Kattelus, Hannu

AU - Leskelä, Markku

AU - Mäkelä, M.

AU - Niinistö, Lauri

AU - Nykänen, E.

AU - Soininen, P.

AU - Tiitta, Marja

N1 - Project code: puo1003

PY - 1991

Y1 - 1991

N2 - Aluminium oxide thin films were prepared by the ALE process using AICI3 and A1(OR)3 (R = Et,Pr) as aluminium source and H2O, O2 or various aliphatic alcohols as oxygen source. The process was also operated in the CVD mode and the deposition rates and mechanisms were compared. The films were characterized by Auger and XRF spectrometries for trace element impurities while the chloride residues were quantitatively determined by chemical analysis. FTIR was used to study the residual OH groups. The measured electrical constants and environmental stability indicate that the films are suitable for practical applications as insulating and protective layers.

AB - Aluminium oxide thin films were prepared by the ALE process using AICI3 and A1(OR)3 (R = Et,Pr) as aluminium source and H2O, O2 or various aliphatic alcohols as oxygen source. The process was also operated in the CVD mode and the deposition rates and mechanisms were compared. The films were characterized by Auger and XRF spectrometries for trace element impurities while the chloride residues were quantitatively determined by chemical analysis. FTIR was used to study the residual OH groups. The measured electrical constants and environmental stability indicate that the films are suitable for practical applications as insulating and protective layers.

U2 - 10.1016/0254-0584(91)90073-4

DO - 10.1016/0254-0584(91)90073-4

M3 - Article

VL - 28

SP - 379

EP - 388

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 4

ER -