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Growth and optical properties of strain-induced quantum dots
Harri Lipsanen
, Markku Sopanen
, J. Tulkki
,
Jouni Ahopelto
, M. Brasken
, M. Lindberg
Helsinki University of Technology
Åbo Akademi University
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
5
Citations (Scopus)
Overview
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Keyphrases
Growth Properties
100%
Optical Properties
100%
Quantum Dots
100%
Strain-induced
100%
Quantum Well
60%
Growth Temperature
20%
Single Particle Model
20%
Radiative Recombination
20%
Finite Element Method
20%
Gallium Arsenide
20%
GaAs Quantum Well
20%
Photoluminescence
20%
InGaAs
20%
Transition Energy
20%
Relaxation Time
20%
Theoretical Modeling
20%
Strain Field
20%
Upconversion
20%
Recombination Time
20%
Ground-state-transition
20%
Excited-state Transition
20%
Surface Quantum Well
20%
Zeeman Splitting
20%
Coulomb Scattering
20%
Quantum Dot Structures
20%
Time-resolved Photoluminescence
20%
Quantum Dot Superlattices
20%
Magnetic Field Effect
20%
Vertical Confinement
20%
Fast Rise Time
20%
Island Growth
20%
Well Potential
20%
Scattering Mechanism
20%
Narrow Linewidth
20%
Low-temperature Photoluminescence
20%
Strained Layers
20%
INIS
strains
100%
growth
100%
optical properties
100%
quantum dots
100%
quantum wells
71%
islands
57%
indium phosphides
42%
modeling
28%
photoluminescence
28%
gallium arsenides
28%
layers
14%
surfaces
14%
thickness
14%
energy
14%
low temperature
14%
size
14%
electrons
14%
magnetic fields
14%
conversion
14%
finite element method
14%
yields
14%
distance
14%
time resolution
14%
luminescence
14%
confinement
14%
scattering
14%
recombination
14%
line widths
14%
superlattices
14%
single-particle model
14%
rise time
14%
indium arsenides
14%
relaxation time
14%
ground states
14%
excited states
14%
zeeman effect
14%
coulomb scattering
14%
Material Science
Optical Property
100%
Quantum Dot
100%
Quantum Well
71%
Gallium Arsenide
28%
Photoluminescence
28%
Superlattice
14%
Luminescence
14%
Theoretical Modeling
14%
Linewidth
14%
Finite Element Methods
14%
Indium Gallium Arsenide
14%
Surface (Surface Science)
14%
Engineering
Quantum Dot
100%
Quantum Well
71%
Gallium Arsenide
28%
Low-Temperature
14%
Initial Stage
14%
Rise Time
14%
Strain Field
14%
Strained Layer
14%
Indium Gallium Arsenide
14%
Energy Transition
14%
Growth Temperature
14%
Magnetic Field
14%
Radiative Recombination
14%
State Transition
14%
Finite Element Analysis
14%
Relaxation Time
14%
Ground State
14%
Excited State
14%
Superlattice
14%
Physics
Quantum Dot
100%
Optical Property
100%
Quantum Wells
71%
Photoluminescence
28%
Linewidth
14%
Relaxation Time
14%
Magnetic Field
14%
Superlattice
14%
Finite Element Analysis
14%
Ground State
14%
Chemical Engineering
Growth Temperature
100%