Growth of CVD graphene on copper by rapid thermal processing

W. Kim, J. Riikonen, Sanna Arpiainen, O. Svensk, H. Lipsanen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    2 Citations (Scopus)

    Abstract

    We have investigated the fabrication of graphene by chemical vapor deposition using a conventional rapid thermal processing system with infrared heating. Graphene films were grown on the pretreated copper foil in RTP at 935-960°C at pressure of 6~7 mbar. The grown films were characterized by scanning electron microscope and Raman spectroscopy to investigate morphology of graphene.
    The growth of graphene was initiated by small flakes that spread rapidly covering the whole copper surface as a single-layer film in ~20 seconds. Room temperature mobility and sheet resistance extracted by transfer-length method (TLM) for the graphene film transferred onto the SiO2/Si substrate were around 1,800 cm2/Vs and 260 Ω/ð with the gate voltage, respectively.
    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium Proceedings
    Pages27-32
    Volume1451
    DOIs
    Publication statusPublished - 2013
    MoE publication typeA4 Article in a conference publication
    Event2012 MRS Spring Meeting - San Francisco, CA, United States
    Duration: 9 Apr 201213 Apr 2012

    Publication series

    SeriesMaterials Research Society Symposia Proceedings
    Volume1451
    ISSN0272-9172

    Conference

    Conference2012 MRS Spring Meeting
    CountryUnited States
    CitySan Francisco, CA
    Period9/04/1213/04/12

    Fingerprint

    Rapid thermal processing
    Graphite
    Copper
    Chemical vapor deposition
    Infrared heating
    Sheet resistance
    Metal foil
    Raman spectroscopy
    Electron microscopes
    Scanning
    Fabrication
    Electric potential
    Substrates

    Cite this

    Kim, W., Riikonen, J., Arpiainen, S., Svensk, O., & Lipsanen, H. (2013). Growth of CVD graphene on copper by rapid thermal processing. In Materials Research Society Symposium Proceedings (Vol. 1451, pp. 27-32). Materials Research Society Symposia Proceedings, Vol.. 1451 https://doi.org/10.1557/opl.2012.1333
    Kim, W. ; Riikonen, J. ; Arpiainen, Sanna ; Svensk, O. ; Lipsanen, H. / Growth of CVD graphene on copper by rapid thermal processing. Materials Research Society Symposium Proceedings. Vol. 1451 2013. pp. 27-32 (Materials Research Society Symposia Proceedings, Vol. 1451).
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    title = "Growth of CVD graphene on copper by rapid thermal processing",
    abstract = "We have investigated the fabrication of graphene by chemical vapor deposition using a conventional rapid thermal processing system with infrared heating. Graphene films were grown on the pretreated copper foil in RTP at 935-960°C at pressure of 6~7 mbar. The grown films were characterized by scanning electron microscope and Raman spectroscopy to investigate morphology of graphene. The growth of graphene was initiated by small flakes that spread rapidly covering the whole copper surface as a single-layer film in ~20 seconds. Room temperature mobility and sheet resistance extracted by transfer-length method (TLM) for the graphene film transferred onto the SiO2/Si substrate were around 1,800 cm2/Vs and 260 Ω/{\dh} with the gate voltage, respectively.",
    author = "W. Kim and J. Riikonen and Sanna Arpiainen and O. Svensk and H. Lipsanen",
    year = "2013",
    doi = "10.1557/opl.2012.1333",
    language = "English",
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    Kim, W, Riikonen, J, Arpiainen, S, Svensk, O & Lipsanen, H 2013, Growth of CVD graphene on copper by rapid thermal processing. in Materials Research Society Symposium Proceedings. vol. 1451, Materials Research Society Symposia Proceedings, vol. 1451, pp. 27-32, 2012 MRS Spring Meeting, San Francisco, CA, United States, 9/04/12. https://doi.org/10.1557/opl.2012.1333

    Growth of CVD graphene on copper by rapid thermal processing. / Kim, W.; Riikonen, J.; Arpiainen, Sanna; Svensk, O.; Lipsanen, H.

    Materials Research Society Symposium Proceedings. Vol. 1451 2013. p. 27-32 (Materials Research Society Symposia Proceedings, Vol. 1451).

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    AU - Arpiainen, Sanna

    AU - Svensk, O.

    AU - Lipsanen, H.

    PY - 2013

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    N2 - We have investigated the fabrication of graphene by chemical vapor deposition using a conventional rapid thermal processing system with infrared heating. Graphene films were grown on the pretreated copper foil in RTP at 935-960°C at pressure of 6~7 mbar. The grown films were characterized by scanning electron microscope and Raman spectroscopy to investigate morphology of graphene. The growth of graphene was initiated by small flakes that spread rapidly covering the whole copper surface as a single-layer film in ~20 seconds. Room temperature mobility and sheet resistance extracted by transfer-length method (TLM) for the graphene film transferred onto the SiO2/Si substrate were around 1,800 cm2/Vs and 260 Ω/ð with the gate voltage, respectively.

    AB - We have investigated the fabrication of graphene by chemical vapor deposition using a conventional rapid thermal processing system with infrared heating. Graphene films were grown on the pretreated copper foil in RTP at 935-960°C at pressure of 6~7 mbar. The grown films were characterized by scanning electron microscope and Raman spectroscopy to investigate morphology of graphene. The growth of graphene was initiated by small flakes that spread rapidly covering the whole copper surface as a single-layer film in ~20 seconds. Room temperature mobility and sheet resistance extracted by transfer-length method (TLM) for the graphene film transferred onto the SiO2/Si substrate were around 1,800 cm2/Vs and 260 Ω/ð with the gate voltage, respectively.

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    Kim W, Riikonen J, Arpiainen S, Svensk O, Lipsanen H. Growth of CVD graphene on copper by rapid thermal processing. In Materials Research Society Symposium Proceedings. Vol. 1451. 2013. p. 27-32. (Materials Research Society Symposia Proceedings, Vol. 1451). https://doi.org/10.1557/opl.2012.1333