Growth of CVD graphene on copper by rapid thermal processing

W. Kim, J. Riikonen, Sanna Arpiainen, O. Svensk, H. Lipsanen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    2 Citations (Scopus)


    We have investigated the fabrication of graphene by chemical vapor deposition using a conventional rapid thermal processing system with infrared heating. Graphene films were grown on the pretreated copper foil in RTP at 935-960°C at pressure of 6~7 mbar. The grown films were characterized by scanning electron microscope and Raman spectroscopy to investigate morphology of graphene.
    The growth of graphene was initiated by small flakes that spread rapidly covering the whole copper surface as a single-layer film in ~20 seconds. Room temperature mobility and sheet resistance extracted by transfer-length method (TLM) for the graphene film transferred onto the SiO2/Si substrate were around 1,800 cm2/Vs and 260 Ω/ð with the gate voltage, respectively.
    Original languageEnglish
    Title of host publication2012 Materials Research Society Spring Meeting
    PublisherMaterials Research Society
    Publication statusPublished - 2013
    MoE publication typeA4 Article in a conference publication
    Event2012 MRS Spring Meeting - San Francisco, CA, United States
    Duration: 9 Apr 201213 Apr 2012

    Publication series

    SeriesMaterials Research Society Symposia Proceedings


    Conference2012 MRS Spring Meeting
    Country/TerritoryUnited States
    CitySan Francisco, CA


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