Growth of CVD graphene on copper by rapid thermal processing

W. Kim, J. Riikonen, Sanna Arpiainen, O. Svensk, H. Lipsanen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)

Abstract

We have investigated the fabrication of graphene by chemical vapor deposition using a conventional rapid thermal processing system with infrared heating. Graphene films were grown on the pretreated copper foil in RTP at 935-960°C at pressure of 6~7 mbar. The grown films were characterized by scanning electron microscope and Raman spectroscopy to investigate morphology of graphene.
The growth of graphene was initiated by small flakes that spread rapidly covering the whole copper surface as a single-layer film in ~20 seconds. Room temperature mobility and sheet resistance extracted by transfer-length method (TLM) for the graphene film transferred onto the SiO2/Si substrate were around 1,800 cm2/Vs and 260 Ω/ð with the gate voltage, respectively.
Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages27-32
Volume1451
DOIs
Publication statusPublished - 2013
MoE publication typeNot Eligible
EventMRS Spring Meeting - San Francisco, CA, United States
Duration: 9 Apr 201213 Apr 2012

Publication series

NameMRS Proceedings
PublisherCambridge University Press
Volume1451
ISSN (Print)1946-4274

Conference

ConferenceMRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period9/04/1213/04/12

Fingerprint

Rapid thermal processing
Graphite
Copper
Chemical vapor deposition
Infrared heating
Sheet resistance
Metal foil
Raman spectroscopy
Electron microscopes
Scanning
Fabrication
Electric potential
Substrates

Cite this

Kim, W., Riikonen, J., Arpiainen, S., Svensk, O., & Lipsanen, H. (2013). Growth of CVD graphene on copper by rapid thermal processing. In Materials Research Society Symposium Proceedings (Vol. 1451, pp. 27-32). Materials Research Society Symposia Proceedings, Vol.. 1451 https://doi.org/10.1557/opl.2012.1333
Kim, W. ; Riikonen, J. ; Arpiainen, Sanna ; Svensk, O. ; Lipsanen, H. / Growth of CVD graphene on copper by rapid thermal processing. Materials Research Society Symposium Proceedings. Vol. 1451 2013. pp. 27-32 (Materials Research Society Symposia Proceedings, Vol. 1451).
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Kim, W, Riikonen, J, Arpiainen, S, Svensk, O & Lipsanen, H 2013, Growth of CVD graphene on copper by rapid thermal processing. in Materials Research Society Symposium Proceedings. vol. 1451, Materials Research Society Symposia Proceedings, vol. 1451, pp. 27-32, MRS Spring Meeting, San Francisco, CA, United States, 9/04/12. https://doi.org/10.1557/opl.2012.1333

Growth of CVD graphene on copper by rapid thermal processing. / Kim, W.; Riikonen, J.; Arpiainen, Sanna; Svensk, O.; Lipsanen, H.

Materials Research Society Symposium Proceedings. Vol. 1451 2013. p. 27-32 (Materials Research Society Symposia Proceedings, Vol. 1451).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AB - We have investigated the fabrication of graphene by chemical vapor deposition using a conventional rapid thermal processing system with infrared heating. Graphene films were grown on the pretreated copper foil in RTP at 935-960°C at pressure of 6~7 mbar. The grown films were characterized by scanning electron microscope and Raman spectroscopy to investigate morphology of graphene. The growth of graphene was initiated by small flakes that spread rapidly covering the whole copper surface as a single-layer film in ~20 seconds. Room temperature mobility and sheet resistance extracted by transfer-length method (TLM) for the graphene film transferred onto the SiO2/Si substrate were around 1,800 cm2/Vs and 260 Ω/ð with the gate voltage, respectively.

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Kim W, Riikonen J, Arpiainen S, Svensk O, Lipsanen H. Growth of CVD graphene on copper by rapid thermal processing. In Materials Research Society Symposium Proceedings. Vol. 1451. 2013. p. 27-32. (Materials Research Society Symposia Proceedings, Vol. 1451). https://doi.org/10.1557/opl.2012.1333