TY - JOUR
T1 - Growth of Ga0.29In0.71As0.61P0.39(λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy
AU - Tappura, K.
AU - Asonen, H.
PY - 1993
Y1 - 1993
N2 - The surface morphology of GaInAsP layers for wavelengths near 1.3 μm grown on InP substrates was found to become poor under growth conditions which were only slightly different from the near optimum growth conditions. The substrate temperature was found to be a critical parameter. The quality of the films with negative lattice mismatch differed significantly from those with positive mismatch. In addition, double-crystal XRD features from the layers with poor surface morphology were considerably declined.
AB - The surface morphology of GaInAsP layers for wavelengths near 1.3 μm grown on InP substrates was found to become poor under growth conditions which were only slightly different from the near optimum growth conditions. The substrate temperature was found to be a critical parameter. The quality of the films with negative lattice mismatch differed significantly from those with positive mismatch. In addition, double-crystal XRD features from the layers with poor surface morphology were considerably declined.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0027904565&partnerID=MN8TOARS
U2 - 10.1016/0022-0248(93)90608-Y
DO - 10.1016/0022-0248(93)90608-Y
M3 - Article
SN - 0022-0248
VL - 127
SP - 217
EP - 220
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -