Growth of Ga0.29In0.71As0.61P0.39(λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy

K. Tappura, H. Asonen

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)

Abstract

The surface morphology of GaInAsP layers for wavelengths near 1.3 μm grown on InP substrates was found to become poor under growth conditions which were only slightly different from the near optimum growth conditions. The substrate temperature was found to be a critical parameter. The quality of the films with negative lattice mismatch differed significantly from those with positive mismatch. In addition, double-crystal XRD features from the layers with poor surface morphology were considerably declined.
Original languageEnglish
Pages (from-to)217-220
JournalJournal of Crystal Growth
Volume127
Issue number1-4
DOIs
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed

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