The surface morphology of GaInAsP layers for wavelengths near 1.3 μm grown on InP substrates was found to become poor under growth conditions which were only slightly different from the near optimum growth conditions. The substrate temperature was found to be a critical parameter. The quality of the films with negative lattice mismatch differed significantly from those with positive mismatch. In addition, double-crystal XRD features from the layers with poor surface morphology were considerably declined.
Tappura, K., & Asonen, H. (1993). Growth of Ga0.29In0.71As0.61P0.39(λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy. Journal of Crystal Growth, 127(1-4), 217-220. https://doi.org/10.1016/0022-0248(93)90608-Y