Growth of Ga0.29In0.71As0.61P0.39(λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy

K. Tappura; H. Asonen

doi:10.1016/0022-0248(93)90608-Y

Growth of Ga0.29In0.71As0.61P0.39(λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy

K. Tappura, H. Asonen

Not published at VTT

Tampere University of Technology (TUT)

Research output: Contribution to journal › Article › Scientific › peer-review

10 Citations (Scopus)

Abstract

The surface morphology of GaInAsP layers for wavelengths near 1.3 μm grown on InP substrates was found to become poor under growth conditions which were only slightly different from the near optimum growth conditions. The substrate temperature was found to be a critical parameter. The quality of the films with negative lattice mismatch differed significantly from those with positive mismatch. In addition, double-crystal XRD features from the layers with poor surface morphology were considerably declined.

Original language	English
Pages (from-to)	217-220
Journal	Journal of Crystal Growth
Volume	127
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(93)90608-Y
Publication status	Published - 1993
MoE publication type	A1 Journal article-refereed

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10.1016/0022-0248(93)90608-Y

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title = "Growth of Ga0.29In0.71As0.61P0.39(λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy",

abstract = "The surface morphology of GaInAsP layers for wavelengths near 1.3 μm grown on InP substrates was found to become poor under growth conditions which were only slightly different from the near optimum growth conditions. The substrate temperature was found to be a critical parameter. The quality of the films with negative lattice mismatch differed significantly from those with positive mismatch. In addition, double-crystal XRD features from the layers with poor surface morphology were considerably declined.",

author = "K. Tappura and H. Asonen",

year = "1993",

doi = "10.1016/0022-0248(93)90608-Y",

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T1 - Growth of Ga0.29In0.71As0.61P0.39(λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy

AU - Tappura, K.

AU - Asonen, H.

PY - 1993

Y1 - 1993

N2 - The surface morphology of GaInAsP layers for wavelengths near 1.3 μm grown on InP substrates was found to become poor under growth conditions which were only slightly different from the near optimum growth conditions. The substrate temperature was found to be a critical parameter. The quality of the films with negative lattice mismatch differed significantly from those with positive mismatch. In addition, double-crystal XRD features from the layers with poor surface morphology were considerably declined.

AB - The surface morphology of GaInAsP layers for wavelengths near 1.3 μm grown on InP substrates was found to become poor under growth conditions which were only slightly different from the near optimum growth conditions. The substrate temperature was found to be a critical parameter. The quality of the films with negative lattice mismatch differed significantly from those with positive mismatch. In addition, double-crystal XRD features from the layers with poor surface morphology were considerably declined.

UR - https://www.scopus.com/pages/publications/0027904565

U2 - 10.1016/0022-0248(93)90608-Y

DO - 10.1016/0022-0248(93)90608-Y

M3 - Article

SN - 0022-0248

VL - 127

SP - 217

EP - 220

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Growth of Ga0.29In0.71As0.61P0.39(λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy

Abstract

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