Fingerprint
Dive into the research topics of 'Growth of Ga0.29In0.71As0.61P0.39(λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy'. Together they form a unique fingerprint.- Sort by
- Weight
- Alphabetically
Growth of Ga0.29In0.71As0.61P0.39(λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy
K. Tappura, H. Asonen
Research output: Contribution to journal › Article › Scientific › peer-review
10
Citations
(Scopus)