Gallium arsenide and indium arsenide layers have been grown by the Atomic Layer Epitaxy method (ALE) using gallium and indium chlorides and arsenic hydride as source materials. The gallium arsenide layers grown are unintentionally doped to a level of $GREG 1017 cm-3. Carrier concentration and mobility vary with growth parameters. Mobilities up to 75 % of the theoretical values for materials with such carrier concentrations are measured. For GaAs, the RBS/channeling technique gives minimum yield of 4 % compared to the corresponding random backscattering spectrum, indicating good crystalline quality. This is further confirmed by observation of a sharp photoluminescence peak originating from GaAs/InAs/GaAs single quantum well a few monolayers thick. Peak width of 12 meV is measured at 12 K.
|Title of host publication||Acta Polytechnica Scandinavica, Electrical Engineering Series|
|Place of Publication||Helsinki|
|Publication status||Published - 1989|
|MoE publication type||B2 Part of a book or another research book|
|Series||Acta Polytechnica Scandinavica: EL Electrical Engineering Series|
Kattelus, H., Ahopelto, J., & Suni, I. (1989). Growth of GaAs and InAs by atomic layer epitaxy using Ga and in chlorides and AsH. In Acta Polytechnica Scandinavica, Electrical Engineering Series (pp. 155-164). Acta Polytechnica Scandinavica: EL Electrical Engineering Series