Growth of GaAs on polycrystalline silicon-on-insulator

J. Riikonen, A. Säynätjoki, M. Sopanen, H. Lipsanen, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.
    Original languageEnglish
    Pages (from-to)403-405
    Number of pages3
    JournalJournal of Materials Science: Materials in Electronics
    Volume14
    Issue number5-7
    DOIs
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Polysilicon
    Silicon
    insulators
    Growth temperature
    silicon
    Photoluminescence
    X ray diffraction
    Vapor phase epitaxy
    Epilayers
    Full width at half maximum
    Semiconductor quantum dots
    Structural properties
    Optical properties
    Metals
    photoluminescence
    gallium arsenide
    diffraction
    vapor phase epitaxy
    Substrates
    x rays

    Keywords

    • silicon-on-insulator
    • SOI
    • GaAs
    • gallium
    • X-ray diffraction
    • XRD

    Cite this

    Riikonen, J. ; Säynätjoki, A. ; Sopanen, M. ; Lipsanen, H. ; Ahopelto, Jouni. / Growth of GaAs on polycrystalline silicon-on-insulator. In: Journal of Materials Science: Materials in Electronics. 2003 ; Vol. 14, No. 5-7. pp. 403-405.
    @article{82ab9988edd84c7098a1f4942e35c158,
    title = "Growth of GaAs on polycrystalline silicon-on-insulator",
    abstract = "The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.",
    keywords = "silicon-on-insulator, SOI, GaAs, gallium, X-ray diffraction, XRD",
    author = "J. Riikonen and A. S{\"a}yn{\"a}tjoki and M. Sopanen and H. Lipsanen and Jouni Ahopelto",
    year = "2003",
    doi = "10.1023/A:1023965121007",
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    Growth of GaAs on polycrystalline silicon-on-insulator. / Riikonen, J.; Säynätjoki, A.; Sopanen, M.; Lipsanen, H.; Ahopelto, Jouni.

    In: Journal of Materials Science: Materials in Electronics, Vol. 14, No. 5-7, 2003, p. 403-405.

    Research output: Contribution to journalArticleScientificpeer-review

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    T1 - Growth of GaAs on polycrystalline silicon-on-insulator

    AU - Riikonen, J.

    AU - Säynätjoki, A.

    AU - Sopanen, M.

    AU - Lipsanen, H.

    AU - Ahopelto, Jouni

    PY - 2003

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    N2 - The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.

    AB - The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.

    KW - silicon-on-insulator

    KW - SOI

    KW - GaAs

    KW - gallium

    KW - X-ray diffraction

    KW - XRD

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