The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.
|Number of pages||3|
|Journal||Journal of Materials Science: Materials in Electronics|
|Publication status||Published - 2003|
|MoE publication type||A1 Journal article-refereed|
- X-ray diffraction
Riikonen, J., Säynätjoki, A., Sopanen, M., Lipsanen, H., & Ahopelto, J. (2003). Growth of GaAs on polycrystalline silicon-on-insulator. Journal of Materials Science: Materials in Electronics, 14(5-7), 403-405. https://doi.org/10.1023/A:1023965121007