Growth of GaAs on polycrystalline silicon-on-insulator

J. Riikonen, A. Säynätjoki, M. Sopanen, H. Lipsanen, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.
Original languageEnglish
Pages (from-to)403-405
Number of pages3
JournalJournal of Materials Science: Materials in Electronics
Volume14
Issue number5-7
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Fingerprint

Polysilicon
Silicon
insulators
Growth temperature
silicon
Photoluminescence
X ray diffraction
Vapor phase epitaxy
Epilayers
Full width at half maximum
Semiconductor quantum dots
Structural properties
Optical properties
Metals
photoluminescence
gallium arsenide
diffraction
vapor phase epitaxy
Substrates
x rays

Keywords

  • silicon-on-insulator
  • SOI
  • GaAs
  • gallium
  • X-ray diffraction
  • XRD

Cite this

Riikonen, J. ; Säynätjoki, A. ; Sopanen, M. ; Lipsanen, H. ; Ahopelto, Jouni. / Growth of GaAs on polycrystalline silicon-on-insulator. In: Journal of Materials Science: Materials in Electronics. 2003 ; Vol. 14, No. 5-7. pp. 403-405.
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abstract = "The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.",
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Growth of GaAs on polycrystalline silicon-on-insulator. / Riikonen, J.; Säynätjoki, A.; Sopanen, M.; Lipsanen, H.; Ahopelto, Jouni.

In: Journal of Materials Science: Materials in Electronics, Vol. 14, No. 5-7, 2003, p. 403-405.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Growth of GaAs on polycrystalline silicon-on-insulator

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AU - Säynätjoki, A.

AU - Sopanen, M.

AU - Lipsanen, H.

AU - Ahopelto, Jouni

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AB - The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.

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KW - SOI

KW - GaAs

KW - gallium

KW - X-ray diffraction

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