Growth of GaAs on polycrystalline silicon-on-insulator

J. Riikonen; A. Säynätjoki; M. Sopanen; H. Lipsanen; Jouni Ahopelto

doi:10.1023/A:1023965121007

Growth of GaAs on polycrystalline silicon-on-insulator

J. Riikonen, A. Säynätjoki, M. Sopanen, H. Lipsanen, Jouni Ahopelto

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In_0.5Ga_0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.

Original language	English
Pages (from-to)	403-405
Number of pages	3
Journal	Journal of Materials Science: Materials in Electronics
Volume	14
Issue number	5-7
DOIs	https://doi.org/10.1023/A:1023965121007
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed

Keywords

silicon-on-insulator
SOI
GaAs
gallium
X-ray diffraction
XRD

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10.1023/A:1023965121007

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title = "Growth of GaAs on polycrystalline silicon-on-insulator",

abstract = "The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.",

keywords = "silicon-on-insulator, SOI, GaAs, gallium, X-ray diffraction, XRD",

author = "J. Riikonen and A. S{\"a}yn{\"a}tjoki and M. Sopanen and H. Lipsanen and Jouni Ahopelto",

year = "2003",

doi = "10.1023/A:1023965121007",

language = "English",

volume = "14",

pages = "403--405",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

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TY - JOUR

T1 - Growth of GaAs on polycrystalline silicon-on-insulator

AU - Riikonen, J.

AU - Säynätjoki, A.

AU - Sopanen, M.

AU - Lipsanen, H.

AU - Ahopelto, Jouni

PY - 2003

Y1 - 2003

N2 - The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.

AB - The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.

KW - silicon-on-insulator

KW - SOI

KW - GaAs

KW - gallium

KW - X-ray diffraction

KW - XRD

U2 - 10.1023/A:1023965121007

DO - 10.1023/A:1023965121007

M3 - Article

SN - 0957-4522

VL - 14

SP - 403

EP - 405

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 5-7

ER -

Growth of GaAs on polycrystalline silicon-on-insulator

Abstract

Keywords

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