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Growth of GaAs on polycrystalline silicon-on-insulator
J. Riikonen
, A. Säynätjoki
, M. Sopanen
, H. Lipsanen
,
Jouni Ahopelto
Helsinki University of Technology
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
1
Citation (Scopus)
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INIS
silicon
100%
growth
100%
polycrystals
100%
gallium arsenides
100%
photoluminescence
25%
x-ray diffraction
25%
layers
12%
comparative evaluations
12%
thickness
12%
substrates
12%
variations
12%
optical properties
12%
resolution
12%
organometallic compounds
12%
curves
12%
quantum dots
12%
vapor phase epitaxy
12%
Keyphrases
Silicon-on-insulator
100%
Gallium Arsenide
100%
Polysilicon
100%
Growth Temperature
25%
Structural Properties
12%
Optical Properties
12%
X Ray Diffraction
12%
Quantum Dots
12%
Insulator Substrate
12%
Growth Process
12%
Photoluminescence Intensity
12%
Metal Organic Vapor Phase Epitaxy (MOVPE)
12%
Photoluminescence Measurements
12%
Epilayer
12%
High-resolution X-ray Diffraction (HRXRD)
12%
Diffraction Lines
12%
Optically Active Layer
12%
Two-step Growth
12%
Engineering
Silicon on Insulator
100%
Gallium Arsenide
100%
Polysilicon
100%
Ray Diffraction
25%
Growth Temperature
25%
Stronger Effect
12%
Growth Process
12%
Quantum Dot
12%
Structural Property
12%
Active Layer
12%
High Resolution
12%
Material Science
Gallium Arsenide
100%
Silicon
100%
Photoluminescence
25%
Structural Property
12%
Vapor Phase Epitaxy
12%
Epilayers
12%
High Resolution X-Ray Diffraction
12%
X-Ray Diffraction
12%
Optical Property
12%
Quantum Dot
12%