Growth of InN by vertical flow MOVPE

Sami Suihkonen; J. Sormunen; Victor-Tapio Rangel-Kuoppa; H. Koskenvaara; Markku Sopanen

doi:10.1016/j.jcrysgro.2006.02.022

Growth of InN by vertical flow MOVPE

Sami Suihkonen, J. Sormunen, Victor-Tapio Rangel-Kuoppa, H. Koskenvaara, Markku Sopanen

Not published at VTT

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN. The reactor geometry is found to cause enhanced cracking of NH3, and the growth rate is limited by the amount of reactive indium in the temperature range of 550-650 °C. The grown films are characterized comprehensively. Experimental results indicate that the InN films, grown on sapphire substrates, contain metallic indium and the film surface consist of hexagonal islands. Growth temperature has a strong effect on the surface island size, optical quality and electrical properties of the InN layer. The desorption of nitrogen is assumed to cause the formation of metallic indium above 550 °C

Original language	English
Pages (from-to)	8-11
Journal	Journal of Crystal Growth
Volume	291
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.02.022
Publication status	Published - 15 May 2006
MoE publication type	A1 Journal article-refereed

Keywords

A3. Metalorganic chemical vapour deposition
B1. Indium nitride
B2. Semiconducting III-V materials

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10.1016/j.jcrysgro.2006.02.022

Cite this

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title = "Growth of InN by vertical flow MOVPE",

abstract = "InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN. The reactor geometry is found to cause enhanced cracking of NH3, and the growth rate is limited by the amount of reactive indium in the temperature range of 550-650 °C. The grown films are characterized comprehensively. Experimental results indicate that the InN films, grown on sapphire substrates, contain metallic indium and the film surface consist of hexagonal islands. Growth temperature has a strong effect on the surface island size, optical quality and electrical properties of the InN layer. The desorption of nitrogen is assumed to cause the formation of metallic indium above 550 °C",

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author = "Sami Suihkonen and J. Sormunen and Victor-Tapio Rangel-Kuoppa and H. Koskenvaara and Markku Sopanen",

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T1 - Growth of InN by vertical flow MOVPE

AU - Suihkonen, Sami

AU - Sormunen, J.

AU - Rangel-Kuoppa, Victor-Tapio

AU - Koskenvaara, H.

AU - Sopanen, Markku

PY - 2006/5/15

Y1 - 2006/5/15

N2 - InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN. The reactor geometry is found to cause enhanced cracking of NH3, and the growth rate is limited by the amount of reactive indium in the temperature range of 550-650 °C. The grown films are characterized comprehensively. Experimental results indicate that the InN films, grown on sapphire substrates, contain metallic indium and the film surface consist of hexagonal islands. Growth temperature has a strong effect on the surface island size, optical quality and electrical properties of the InN layer. The desorption of nitrogen is assumed to cause the formation of metallic indium above 550 °C

AB - InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN. The reactor geometry is found to cause enhanced cracking of NH3, and the growth rate is limited by the amount of reactive indium in the temperature range of 550-650 °C. The grown films are characterized comprehensively. Experimental results indicate that the InN films, grown on sapphire substrates, contain metallic indium and the film surface consist of hexagonal islands. Growth temperature has a strong effect on the surface island size, optical quality and electrical properties of the InN layer. The desorption of nitrogen is assumed to cause the formation of metallic indium above 550 °C

KW - A3. Metalorganic chemical vapour deposition

KW - B1. Indium nitride

KW - B2. Semiconducting III-V materials

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DO - 10.1016/j.jcrysgro.2006.02.022

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VL - 291

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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Growth of InN by vertical flow MOVPE

Abstract

Keywords

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