INIS
alloys
25%
beams
75%
cracking
25%
epitaxy
25%
evaporation
25%
films
50%
gallium
25%
gases
100%
growth
100%
high temperature
25%
impurities
25%
indium
25%
indium phosphides
100%
levels
25%
molecular beam epitaxy
100%
morphology
25%
optimization
25%
phosphorus
50%
probability
25%
purity
25%
range
25%
solids
25%
surfaces
25%
vapors
25%
wavelengths
25%
Keyphrases
Abrupt Change
25%
Alloy Composition
25%
Arsine
25%
Chemical Beam Epitaxy
25%
Electrical-optical Properties
25%
Flux Ratio
25%
Gallium
25%
Gas Source Molecular Beam Epitaxy
100%
Growth Conditions
25%
Growth Temperature
25%
High Purity
25%
High Temperature Cracking
25%
Impurities
25%
Indium
25%
InGaAs
100%
InGaAsP
100%
Phosphorus
50%
Solid Materials
25%
Sticking Probability
25%
Structural Properties
25%
Surface Morphology
25%
V-beam
25%
Vapor Source
25%
Material Science
Chemical Beam Epitaxy
25%
Film
50%
Gallium
25%
Indium
25%
Indium Gallium Arsenide
100%
Molecular Beam Epitaxy
100%
Phase Composition
25%
Structural Property
25%
Surface Morphology
25%
Engineering
Alloy Composition
25%
Growth Condition
25%
Growth Temperature
25%
Indium Gallium Arsenide
100%
Solid Material
25%
Source Gas
100%
Sticking Probability
25%
Structural Property
25%
Surface Morphology
25%
Physics
Epitaxy
25%
Indium
25%
Molecular Beam Epitaxy
100%