Growth of silicon carbide on (100) silicon substrates by molecular beam epitaxy

V.-M. Airaksinen, J. Kaitila, H. Niemi, J. Lahtinen, Jaakko Saarilahti

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)


    A plasma activated gas source molecular beam epitaxy process has been developed in which the molecular beam is formed by activating a methane-hydrogen mixture in a plasma source. Amorphous carbon growth on (100) silicon substrates occurs when the substrate temperature exceeds 800°C. The growth of cubic silicon carbide is observed above 880°C. Epitaxial silicon carbide layers are characterised using x-ray photoemission spectroscopy, atomic force microscopy, ellipsometry and Rutherford backscattering.
    Original languageEnglish
    Pages (from-to)205-207
    JournalPhysica Scripta
    Issue numberT54
    Publication statusPublished - 1 Jan 1994
    MoE publication typeA1 Journal article-refereed


    Dive into the research topics of 'Growth of silicon carbide on (100) silicon substrates by molecular beam epitaxy'. Together they form a unique fingerprint.

    Cite this