Growth of silicon carbide on (100) silicon substrates by molecular beam epitaxy

V.-M. Airaksinen; J. Kaitila; H. Niemi; J. Lahtinen; Jaakko Saarilahti

doi:10.1088/0031-8949/1994/T54/051

Growth of silicon carbide on (100) silicon substrates by molecular beam epitaxy

V.-M. Airaksinen, J. Kaitila, H. Niemi, J. Lahtinen, Jaakko Saarilahti

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

A plasma activated gas source molecular beam epitaxy process has been developed in which the molecular beam is formed by activating a methane-hydrogen mixture in a plasma source. Amorphous carbon growth on (100) silicon substrates occurs when the substrate temperature exceeds 800°C. The growth of cubic silicon carbide is observed above 880°C. Epitaxial silicon carbide layers are characterised using x-ray photoemission spectroscopy, atomic force microscopy, ellipsometry and Rutherford backscattering.

Original language	English
Pages (from-to)	205-207
Journal	Physica Scripta
Volume	1994
Issue number	T54
DOIs	https://doi.org/10.1088/0031-8949/1994/T54/051
Publication status	Published - 1 Jan 1994
MoE publication type	A1 Journal article-refereed

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10.1088/0031-8949/1994/T54/051

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AU - Airaksinen, V.-M.

AU - Kaitila, J.

AU - Niemi, H.

AU - Lahtinen, J.

AU - Saarilahti, Jaakko

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AB - A plasma activated gas source molecular beam epitaxy process has been developed in which the molecular beam is formed by activating a methane-hydrogen mixture in a plasma source. Amorphous carbon growth on (100) silicon substrates occurs when the substrate temperature exceeds 800°C. The growth of cubic silicon carbide is observed above 880°C. Epitaxial silicon carbide layers are characterised using x-ray photoemission spectroscopy, atomic force microscopy, ellipsometry and Rutherford backscattering.

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Growth of silicon carbide on (100) silicon substrates by molecular beam epitaxy

Abstract

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