Growth of silicon carbide on (100) silicon substrates by molecular beam epitaxy

V. M. Airaksinen, J. Kaitila, H. Niemi, J. Lahtinen, J. Saarilahti

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)

    Abstract

    A plasma activated gas source molecular beam epitaxy process has been developed in which the molecular beam is formed by activating a methane-hydrogen mixture in a plasma source. Amorphous carbon growth on (100) silicon substrates occurs when the substrate temperature exceeds 800°C. The growth of cubic silicon carbide is observed above 880°C. Epitaxial silicon carbide layers are characterised using x-ray photoemission spectroscopy, atomic force microscopy, ellipsometry and Rutherford backscattering.

    Original languageEnglish
    Pages (from-to)205-207
    Number of pages3
    JournalPhysica Scripta
    Volume1994
    Issue numberT54
    DOIs
    Publication statusPublished - 1 Jan 1994
    MoE publication typeA1 Journal article-refereed

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