Growth of silicon carbide on (100) silicon substrates by molecular beam epitaxy

V. M. Airaksinen, J. Kaitila, H. Niemi, J. Lahtinen, J. Saarilahti

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

A plasma activated gas source molecular beam epitaxy process has been developed in which the molecular beam is formed by activating a methane-hydrogen mixture in a plasma source. Amorphous carbon growth on (100) silicon substrates occurs when the substrate temperature exceeds 800°C. The growth of cubic silicon carbide is observed above 880°C. Epitaxial silicon carbide layers are characterised using x-ray photoemission spectroscopy, atomic force microscopy, ellipsometry and Rutherford backscattering.

Original languageEnglish
Pages (from-to)205-207
Number of pages3
JournalPhysica Scripta
Volume1994
Issue numberT54
DOIs
Publication statusPublished - 1 Jan 1994
MoE publication typeA1 Journal article-refereed

Fingerprint

Epitaxy
silicon carbides
Silicon
molecular beam epitaxy
Substrate
silicon
Plasma
molecular beams
ellipsometry
Ellipsometry
backscattering
photoelectric emission
methane
X-ray Spectroscopy
Backscattering
Atomic Force Microscopy
Methane
atomic force microscopy
Hydrogen
carbon

Cite this

Airaksinen, V. M. ; Kaitila, J. ; Niemi, H. ; Lahtinen, J. ; Saarilahti, J. / Growth of silicon carbide on (100) silicon substrates by molecular beam epitaxy. In: Physica Scripta. 1994 ; Vol. 1994, No. T54. pp. 205-207.
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Growth of silicon carbide on (100) silicon substrates by molecular beam epitaxy. / Airaksinen, V. M.; Kaitila, J.; Niemi, H.; Lahtinen, J.; Saarilahti, J.

In: Physica Scripta, Vol. 1994, No. T54, 01.01.1994, p. 205-207.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Kaitila, J.

AU - Niemi, H.

AU - Lahtinen, J.

AU - Saarilahti, J.

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