Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications

Analysis of the density of nanometer-thin films

Riikka Puurunen (Corresponding Author), Annelies Delabie, Sven Van Elshocht, Matty Caymax, Martin L. Green, Bert Brijs, Olivier Richard, Hugo Bender, Thierry Conard, Ilse Hoflijk, Wilfried Vandervorst, David Hellin, Danielle Vanhaeren, Chao Zhao, Stefan De Gendt, Marc Heyns

Research output: Contribution to journalArticleScientificpeer-review

27 Citations (Scopus)

Abstract

The density of hafnium oxide films grown by atomic layer deposition for high-κ gate dielectric applications was investigated for films with thickness in the nanometer range. The density, measured by combining the film thickness from transmission electron microscopy with the amount of hafnium deposited from Rutherford backscattering, decreased with decreasing film thickness. The dielectric constant of hafnium oxide remained constant with decreasing film thickness, however. The main reason for the decrease in the measured density seemed not to be a decrease in the inherent material density. Instead, the relative importance of interface roughness in the density measurement increased with decreasing film thickness.
Original languageEnglish
Article number073116
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number7
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Fingerprint

hafnium oxides
atomic layer epitaxy
oxide films
film thickness
thin films
hafnium
backscattering
roughness
permittivity
transmission electron microscopy

Keywords

  • hafnium
  • hafnium compounds
  • atomic layer deposition
  • dielectric materials
  • nanostructured materials
  • dielectric thin films
  • thin films
  • permittivity
  • porosity
  • electrical conductivity
  • interface roughness
  • surface roughness
  • Rutherford backscattering
  • transmission electron microscopy

Cite this

Puurunen, Riikka ; Delabie, Annelies ; Van Elshocht, Sven ; Caymax, Matty ; Green, Martin L. ; Brijs, Bert ; Richard, Olivier ; Bender, Hugo ; Conard, Thierry ; Hoflijk, Ilse ; Vandervorst, Wilfried ; Hellin, David ; Vanhaeren, Danielle ; Zhao, Chao ; De Gendt, Stefan ; Heyns, Marc. / Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications : Analysis of the density of nanometer-thin films . In: Applied Physics Letters. 2005 ; Vol. 86, No. 7.
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title = "Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films",
abstract = "The density of hafnium oxide films grown by atomic layer deposition for high-κ gate dielectric applications was investigated for films with thickness in the nanometer range. The density, measured by combining the film thickness from transmission electron microscopy with the amount of hafnium deposited from Rutherford backscattering, decreased with decreasing film thickness. The dielectric constant of hafnium oxide remained constant with decreasing film thickness, however. The main reason for the decrease in the measured density seemed not to be a decrease in the inherent material density. Instead, the relative importance of interface roughness in the density measurement increased with decreasing film thickness.",
keywords = "hafnium, hafnium compounds, atomic layer deposition, dielectric materials, nanostructured materials, dielectric thin films, thin films, permittivity, porosity, electrical conductivity, interface roughness, surface roughness, Rutherford backscattering, transmission electron microscopy",
author = "Riikka Puurunen and Annelies Delabie and {Van Elshocht}, Sven and Matty Caymax and Green, {Martin L.} and Bert Brijs and Olivier Richard and Hugo Bender and Thierry Conard and Ilse Hoflijk and Wilfried Vandervorst and David Hellin and Danielle Vanhaeren and Chao Zhao and {De Gendt}, Stefan and Marc Heyns",
year = "2005",
doi = "10.1063/1.1866219",
language = "English",
volume = "86",
journal = "Applied Physics Letters",
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Puurunen, R, Delabie, A, Van Elshocht, S, Caymax, M, Green, ML, Brijs, B, Richard, O, Bender, H, Conard, T, Hoflijk, I, Vandervorst, W, Hellin, D, Vanhaeren, D, Zhao, C, De Gendt, S & Heyns, M 2005, 'Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films ', Applied Physics Letters, vol. 86, no. 7, 073116. https://doi.org/10.1063/1.1866219

Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications : Analysis of the density of nanometer-thin films . / Puurunen, Riikka (Corresponding Author); Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty; Green, Martin L.; Brijs, Bert; Richard, Olivier; Bender, Hugo; Conard, Thierry; Hoflijk, Ilse; Vandervorst, Wilfried; Hellin, David; Vanhaeren, Danielle; Zhao, Chao; De Gendt, Stefan; Heyns, Marc.

In: Applied Physics Letters, Vol. 86, No. 7, 073116, 2005.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications

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AU - Puurunen, Riikka

AU - Delabie, Annelies

AU - Van Elshocht, Sven

AU - Caymax, Matty

AU - Green, Martin L.

AU - Brijs, Bert

AU - Richard, Olivier

AU - Bender, Hugo

AU - Conard, Thierry

AU - Hoflijk, Ilse

AU - Vandervorst, Wilfried

AU - Hellin, David

AU - Vanhaeren, Danielle

AU - Zhao, Chao

AU - De Gendt, Stefan

AU - Heyns, Marc

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N2 - The density of hafnium oxide films grown by atomic layer deposition for high-κ gate dielectric applications was investigated for films with thickness in the nanometer range. The density, measured by combining the film thickness from transmission electron microscopy with the amount of hafnium deposited from Rutherford backscattering, decreased with decreasing film thickness. The dielectric constant of hafnium oxide remained constant with decreasing film thickness, however. The main reason for the decrease in the measured density seemed not to be a decrease in the inherent material density. Instead, the relative importance of interface roughness in the density measurement increased with decreasing film thickness.

AB - The density of hafnium oxide films grown by atomic layer deposition for high-κ gate dielectric applications was investigated for films with thickness in the nanometer range. The density, measured by combining the film thickness from transmission electron microscopy with the amount of hafnium deposited from Rutherford backscattering, decreased with decreasing film thickness. The dielectric constant of hafnium oxide remained constant with decreasing film thickness, however. The main reason for the decrease in the measured density seemed not to be a decrease in the inherent material density. Instead, the relative importance of interface roughness in the density measurement increased with decreasing film thickness.

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KW - atomic layer deposition

KW - dielectric materials

KW - nanostructured materials

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KW - thin films

KW - permittivity

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KW - electrical conductivity

KW - interface roughness

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KW - Rutherford backscattering

KW - transmission electron microscopy

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