Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films

Riikka Puurunen (Corresponding Author), Annelies Delabie, Sven Van Elshocht, Matty Caymax, Martin L. Green, Bert Brijs, Olivier Richard, Hugo Bender, Thierry Conard, Ilse Hoflijk, Wilfried Vandervorst, David Hellin, Danielle Vanhaeren, Chao Zhao, Stefan De Gendt, Marc Heyns

Research output: Contribution to journalArticleScientificpeer-review

28 Citations (Scopus)

Abstract

The density of hafnium oxide films grown by atomic layer deposition for high-κ gate dielectric applications was investigated for films with thickness in the nanometer range. The density, measured by combining the film thickness from transmission electron microscopy with the amount of hafnium deposited from Rutherford backscattering, decreased with decreasing film thickness. The dielectric constant of hafnium oxide remained constant with decreasing film thickness, however. The main reason for the decrease in the measured density seemed not to be a decrease in the inherent material density. Instead, the relative importance of interface roughness in the density measurement increased with decreasing film thickness.
Original languageEnglish
Article number073116
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number7
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Keywords

  • hafnium
  • hafnium compounds
  • atomic layer deposition
  • dielectric materials
  • nanostructured materials
  • dielectric thin films
  • thin films
  • permittivity
  • porosity
  • electrical conductivity
  • interface roughness
  • surface roughness
  • Rutherford backscattering
  • transmission electron microscopy

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    Puurunen, R., Delabie, A., Van Elshocht, S., Caymax, M., Green, M. L., Brijs, B., Richard, O., Bender, H., Conard, T., Hoflijk, I., Vandervorst, W., Hellin, D., Vanhaeren, D., Zhao, C., De Gendt, S., & Heyns, M. (2005). Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films . Applied Physics Letters, 86(7), [073116]. https://doi.org/10.1063/1.1866219