Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films

Riikka Puurunen; Annelies Delabie; Sven Van Elshocht; Matty Caymax; Martin L. Green; Bert Brijs; Olivier Richard; Hugo Bender; Thierry Conard; Ilse Hoflijk; Wilfried Vandervorst; David Hellin; Danielle Vanhaeren; Chao Zhao; Stefan De Gendt; Marc Heyns

doi:10.1063/1.1866219

Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films

Riikka Puurunen (Corresponding Author), Annelies Delabie, Sven Van Elshocht, Matty Caymax, Martin L. Green, Bert Brijs, Olivier Richard, Hugo Bender, Thierry Conard, Ilse Hoflijk, Wilfried Vandervorst, David Hellin, Danielle Vanhaeren, Chao Zhao, Stefan De Gendt, Marc Heyns

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

41 Citations (Scopus)

Abstract

The density of hafnium oxide films grown by atomic layer deposition for high-κ gate dielectric applications was investigated for films with thickness in the nanometer range. The density, measured by combining the film thickness from transmission electron microscopy with the amount of hafnium deposited from Rutherford backscattering, decreased with decreasing film thickness. The dielectric constant of hafnium oxide remained constant with decreasing film thickness, however. The main reason for the decrease in the measured density seemed not to be a decrease in the inherent material density. Instead, the relative importance of interface roughness in the density measurement increased with decreasing film thickness.

Original language	English
Article number	073116
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	7
DOIs	https://doi.org/10.1063/1.1866219
Publication status	Published - 2005
MoE publication type	A1 Journal article-refereed

Keywords

hafnium
hafnium compounds
atomic layer deposition
dielectric materials
nanostructured materials
dielectric thin films
thin films
permittivity
porosity
electrical conductivity
interface roughness
surface roughness
Rutherford backscattering
transmission electron microscopy

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10.1063/1.1866219

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Puurunen, R., Delabie, A., Van Elshocht, S., Caymax, M., Green, M. L., Brijs, B., Richard, O., Bender, H., Conard, T., Hoflijk, I., Vandervorst, W., Hellin, D., Vanhaeren, D., Zhao, C., De Gendt, S., & Heyns, M. (2005). Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films . Applied Physics Letters, 86(7), Article 073116. https://doi.org/10.1063/1.1866219

@article{1f06fb2f9a08426c98984cc3aae54455,

title = "Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films ",

abstract = "The density of hafnium oxide films grown by atomic layer deposition for high-κ gate dielectric applications was investigated for films with thickness in the nanometer range. The density, measured by combining the film thickness from transmission electron microscopy with the amount of hafnium deposited from Rutherford backscattering, decreased with decreasing film thickness. The dielectric constant of hafnium oxide remained constant with decreasing film thickness, however. The main reason for the decrease in the measured density seemed not to be a decrease in the inherent material density. Instead, the relative importance of interface roughness in the density measurement increased with decreasing film thickness.",

keywords = "hafnium, hafnium compounds, atomic layer deposition, dielectric materials, nanostructured materials, dielectric thin films, thin films, permittivity, porosity, electrical conductivity, interface roughness, surface roughness, Rutherford backscattering, transmission electron microscopy",

author = "Riikka Puurunen and Annelies Delabie and {Van Elshocht}, Sven and Matty Caymax and Green, {Martin L.} and Bert Brijs and Olivier Richard and Hugo Bender and Thierry Conard and Ilse Hoflijk and Wilfried Vandervorst and David Hellin and Danielle Vanhaeren and Chao Zhao and {De Gendt}, Stefan and Marc Heyns",

year = "2005",

doi = "10.1063/1.1866219",

language = "English",

volume = "86",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

Puurunen, R, Delabie, A, Van Elshocht, S, Caymax, M, Green, ML, Brijs, B, Richard, O, Bender, H, Conard, T, Hoflijk, I, Vandervorst, W, Hellin, D, Vanhaeren, D, Zhao, C, De Gendt, S & Heyns, M 2005, 'Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films ', Applied Physics Letters, vol. 86, no. 7, 073116. https://doi.org/10.1063/1.1866219

TY - JOUR

T1 - Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications

T2 - Analysis of the density of nanometer-thin films

AU - Puurunen, Riikka

AU - Delabie, Annelies

AU - Van Elshocht, Sven

AU - Caymax, Matty

AU - Green, Martin L.

AU - Brijs, Bert

AU - Richard, Olivier

AU - Bender, Hugo

AU - Conard, Thierry

AU - Hoflijk, Ilse

AU - Vandervorst, Wilfried

AU - Hellin, David

AU - Vanhaeren, Danielle

AU - Zhao, Chao

AU - De Gendt, Stefan

AU - Heyns, Marc

PY - 2005

Y1 - 2005

N2 - The density of hafnium oxide films grown by atomic layer deposition for high-κ gate dielectric applications was investigated for films with thickness in the nanometer range. The density, measured by combining the film thickness from transmission electron microscopy with the amount of hafnium deposited from Rutherford backscattering, decreased with decreasing film thickness. The dielectric constant of hafnium oxide remained constant with decreasing film thickness, however. The main reason for the decrease in the measured density seemed not to be a decrease in the inherent material density. Instead, the relative importance of interface roughness in the density measurement increased with decreasing film thickness.

AB - The density of hafnium oxide films grown by atomic layer deposition for high-κ gate dielectric applications was investigated for films with thickness in the nanometer range. The density, measured by combining the film thickness from transmission electron microscopy with the amount of hafnium deposited from Rutherford backscattering, decreased with decreasing film thickness. The dielectric constant of hafnium oxide remained constant with decreasing film thickness, however. The main reason for the decrease in the measured density seemed not to be a decrease in the inherent material density. Instead, the relative importance of interface roughness in the density measurement increased with decreasing film thickness.

KW - hafnium

KW - hafnium compounds

KW - atomic layer deposition

KW - dielectric materials

KW - nanostructured materials

KW - dielectric thin films

KW - thin films

KW - permittivity

KW - porosity

KW - electrical conductivity

KW - interface roughness

KW - surface roughness

KW - Rutherford backscattering

KW - transmission electron microscopy

U2 - 10.1063/1.1866219

DO - 10.1063/1.1866219

M3 - Article

SN - 0003-6951

VL - 86

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 073116

ER -

Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films

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