Harnessing Si CMOS technology for quantum information

L. Hutin (Corresponding author), B. Bertrand, R. Maurand, M. Urdampilleta, B. Jadot, Heorhii Bohuslavskyi, L. Bourdet, Y.-M. Niquet, X. Jehl, S. Barraud, C. Bauerle, T. Meunier, M. Sanquer, S. De Franceschi, M. Vinet

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review


We present some recent progress towards the implementation of the basic building blocks of quantum information processing derived from a Si CMOS technology platform. In our approach, characterized by an emphasis on foundry compatibility in terms of processes and materials, the so-called qubits are encoded in the spin degree of freedom of gate-confined elementary charges. After introducing various qubit manipulation, coupling and readout schemes, we discuss some prospects for scalability, and in particular some potential advantages of the FDSOI technology.
Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherIEEE Institute of Electrical and Electronic Engineers
ISBN (Electronic)978-4-8634-8647-8
Publication statusPublished - Jun 2017
MoE publication typeA4 Article in a conference publication


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