Heavily doped silicon single-electron transistors with single and multi dot characteristics

Mika Prunnila, Jouni Ahopelto, A. Savin, J. Kauranen, Jukka Pekola, A. Manninen, M. Kamp, M. Emmerling, A. Forchel

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Original languageEnglish
    Title of host publicationThe XXXV annual conference of the Finnish physical society
    Subtitle of host publicationProceedings
    Place of PublicationJyväskylä
    PublisherUniversity of Jyväskylä
    ISBN (Print)951-39-0942-5
    Publication statusPublished - 2001
    MoE publication typeA4 Article in a conference publication
    Event35th annual conference of the Finnish physical society - Jyväskylä, Finland
    Duration: 22 Mar 200124 Mar 2001

    Conference

    Conference35th annual conference of the Finnish physical society
    CountryFinland
    CityJyväskylä
    Period22/03/0124/03/01

    Cite this

    Prunnila, M., Ahopelto, J., Savin, A., Kauranen, J., Pekola, J., Manninen, A., Kamp, M., Emmerling, M., & Forchel, A. (2001). Heavily doped silicon single-electron transistors with single and multi dot characteristics. In The XXXV annual conference of the Finnish physical society: Proceedings [260] University of Jyväskylä.