Heavily doped silicon single-electron transistors with single and multi dot characteristics

Mika Prunnila, Jouni Ahopelto, A. Savin, J. Kauranen, Jukka Pekola, A. Manninen, M. Kamp, M. Emmerling, A. Forchel

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Original languageEnglish
    Title of host publicationThe XXXV annual conference of the Finnish physical society
    Subtitle of host publicationProceedings
    Place of PublicationJyväskylä
    PublisherUniversity of Jyväskylä
    ISBN (Print)951-39-0942-5
    Publication statusPublished - 2001
    MoE publication typeA4 Article in a conference publication
    Event35th annual conference of the Finnish physical society - Jyväskylä, Finland
    Duration: 22 Mar 200124 Mar 2001

    Conference

    Conference35th annual conference of the Finnish physical society
    CountryFinland
    CityJyväskylä
    Period22/03/0124/03/01

    Cite this

    Prunnila, M., Ahopelto, J., Savin, A., Kauranen, J., Pekola, J., Manninen, A., ... Forchel, A. (2001). Heavily doped silicon single-electron transistors with single and multi dot characteristics. In The XXXV annual conference of the Finnish physical society: Proceedings [260] Jyväskylä: University of Jyväskylä.
    Prunnila, Mika ; Ahopelto, Jouni ; Savin, A. ; Kauranen, J. ; Pekola, Jukka ; Manninen, A. ; Kamp, M. ; Emmerling, M. ; Forchel, A. / Heavily doped silicon single-electron transistors with single and multi dot characteristics. The XXXV annual conference of the Finnish physical society: Proceedings. Jyväskylä : University of Jyväskylä, 2001.
    @inproceedings{931bad0399534758a13a8f63ad4b65e0,
    title = "Heavily doped silicon single-electron transistors with single and multi dot characteristics",
    author = "Mika Prunnila and Jouni Ahopelto and A. Savin and J. Kauranen and Jukka Pekola and A. Manninen and M. Kamp and M. Emmerling and A. Forchel",
    year = "2001",
    language = "English",
    isbn = "951-39-0942-5",
    booktitle = "The XXXV annual conference of the Finnish physical society",
    publisher = "University of Jyv{\"a}skyl{\"a}",
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    Prunnila, M, Ahopelto, J, Savin, A, Kauranen, J, Pekola, J, Manninen, A, Kamp, M, Emmerling, M & Forchel, A 2001, Heavily doped silicon single-electron transistors with single and multi dot characteristics. in The XXXV annual conference of the Finnish physical society: Proceedings., 260, University of Jyväskylä, Jyväskylä, 35th annual conference of the Finnish physical society, Jyväskylä, Finland, 22/03/01.

    Heavily doped silicon single-electron transistors with single and multi dot characteristics. / Prunnila, Mika; Ahopelto, Jouni; Savin, A.; Kauranen, J.; Pekola, Jukka; Manninen, A.; Kamp, M.; Emmerling, M.; Forchel, A.

    The XXXV annual conference of the Finnish physical society: Proceedings. Jyväskylä : University of Jyväskylä, 2001. 260.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Heavily doped silicon single-electron transistors with single and multi dot characteristics

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    AU - Savin, A.

    AU - Kauranen, J.

    AU - Pekola, Jukka

    AU - Manninen, A.

    AU - Kamp, M.

    AU - Emmerling, M.

    AU - Forchel, A.

    PY - 2001

    Y1 - 2001

    M3 - Conference article in proceedings

    SN - 951-39-0942-5

    BT - The XXXV annual conference of the Finnish physical society

    PB - University of Jyväskylä

    CY - Jyväskylä

    ER -

    Prunnila M, Ahopelto J, Savin A, Kauranen J, Pekola J, Manninen A et al. Heavily doped silicon single-electron transistors with single and multi dot characteristics. In The XXXV annual conference of the Finnish physical society: Proceedings. Jyväskylä: University of Jyväskylä. 2001. 260