Abstract
This paper presents the fabrication steps of a MEMS
package based on silicon interposer wafers with copper
filled TSVs and bonded cap wafers for hermetic sealing of
resonator components. All processes were performed at 200
mm wafer level. For interposer fabrication a standard
process flow including silicon blind hole etching,
isolation, copper filling, wafer front side
redistribution, support wafer bonding, wafer thinning,
and TSV backside reveal was applied. As interposer
backside metallization, appropriate I/O terminals and
seal ring structures were deposited by semi-additive Au
and Au+Sn electro plating. Following, getter material was
deposited onto the interposer wafers which were 90 µm
thick and still mounted onto carrier wafers.
Subsequently, the I/O terminal pads of the interposer
were stud bumped and finally more than 5000 quartz
resonator components were assembled onto each interposer
wafer by Au-Au direct metal bonding. The cap wafer was
equipped with 200 µm deep dry etched cavities and electro
plated Au seal rings around them. Finally, both cap and
interposer wafers were bonded together using a wafer to
wafer bonder and an adapted AuSn soldering process
scheme. In a last step, the carrier wafer was removed
from the former front side of the interposer wafer and
wafer level testing was performed. From a total of 4824
tested devices we found that more than 75 % were sealed
properly under vacuum. The getter appears to be effective
leading to ~0.1 mbar equivalent air pressure and cavities
without getter appear to reach residual air pressure
between 1-2 mbar. The used fabrication processes and
final results will be discussed detailed in this
manuscript.
Original language | English |
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Title of host publication | Proceedings |
Subtitle of host publication | IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 1500-1507 |
ISBN (Electronic) | 978-1-4799-0232-3 |
ISBN (Print) | 978-1-4799-0233-0 |
DOIs | |
Publication status | Published - 2013 |
MoE publication type | Not Eligible |
Event | IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 - Las Vegas, NV, United States Duration: 28 May 2013 → 31 May 2013 |
Conference
Conference | IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 |
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Abbreviated title | ECTC 2013 |
Country | United States |
City | Las Vegas, NV |
Period | 28/05/13 → 31/05/13 |