High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)

Pinki Pal; Bhupesh Bhardwaj; Robin Dahiya; Sami Suihkonen; Jori Lemettinen; Apurba Laha; Dinesh Kabra; Suddhasatta Mahapatra

doi:10.1109/ICEE56203.2022.10117858

High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)

Pinki Pal, Bhupesh Bhardwaj, Robin Dahiya, Sami Suihkonen, Jori Lemettinen, Apurba Laha, Dinesh Kabra, Suddhasatta Mahapatra

Not published at VTT

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Fabrication and systematic characterization of GaN/Si(111)-based visible-blind ultraviolet photodetectors, with Pt/Au contacts, is reported. We demonstrate a record-high detectivity of 4.93x1014 Jones, for bias voltages exceeding VB = 14 V. The high detectivity is obtained due to extremely low dark current ( pA, even for VB = 40 V), and high responsivity, in the wavelength range of 320 nm - 380 nm. The highest responsivity obtained for the measured devices is 255 A/W, at VB = 50 V and excitation wavelength of 353 nm.

Original language	English
Title of host publication	2022 IEEE International Conference on Emerging Electronics (ICEE 2022)
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	809-811
ISBN (Electronic)	978-1-6654-9186-0
DOIs	https://doi.org/10.1109/ICEE56203.2022.10117858
Publication status	Published - 2022
MoE publication type	A4 Article in a conference publication

Keywords

GaN
Schottky contacts
UV Photodetector

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10.1109/ICEE56203.2022.10117858

http://www.scopus.com/inward/record.url?scp=85160544432&partnerID=8YFLogxK

Cite this

Pal, P., Bhardwaj, B., Dahiya, R., Suihkonen, S., Lemettinen, J., Laha, A., Kabra, D., & Mahapatra, S. (2022). High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111). In 2022 IEEE International Conference on Emerging Electronics (ICEE 2022) (pp. 809-811). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ICEE56203.2022.10117858

@inproceedings{6ea179699cd44f629bf961e98c70ae76,

title = "High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)",

abstract = "Fabrication and systematic characterization of GaN/Si(111)-based visible-blind ultraviolet photodetectors, with Pt/Au contacts, is reported. We demonstrate a record-high detectivity of 4.93x1014 Jones, for bias voltages exceeding VB = 14 V. The high detectivity is obtained due to extremely low dark current ( pA, even for VB = 40 V), and high responsivity, in the wavelength range of 320 nm - 380 nm. The highest responsivity obtained for the measured devices is 255 A/W, at VB = 50 V and excitation wavelength of 353 nm.",

keywords = "GaN, Schottky contacts, UV Photodetector",

author = "Pinki Pal and Bhupesh Bhardwaj and Robin Dahiya and Sami Suihkonen and Jori Lemettinen and Apurba Laha and Dinesh Kabra and Suddhasatta Mahapatra",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.",

year = "2022",

doi = "10.1109/ICEE56203.2022.10117858",

language = "English",

pages = "809--811",

booktitle = "2022 IEEE International Conference on Emerging Electronics (ICEE 2022)",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

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}

High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111). / Pal, Pinki; Bhardwaj, Bhupesh; Dahiya, Robin et al.
2022 IEEE International Conference on Emerging Electronics (ICEE 2022). IEEE Institute of Electrical and Electronic Engineers, 2022. p. 809-811.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)

AU - Pal, Pinki

AU - Bhardwaj, Bhupesh

AU - Dahiya, Robin

AU - Suihkonen, Sami

AU - Lemettinen, Jori

AU - Laha, Apurba

AU - Kabra, Dinesh

AU - Mahapatra, Suddhasatta

PY - 2022

Y1 - 2022

N2 - Fabrication and systematic characterization of GaN/Si(111)-based visible-blind ultraviolet photodetectors, with Pt/Au contacts, is reported. We demonstrate a record-high detectivity of 4.93x1014 Jones, for bias voltages exceeding VB = 14 V. The high detectivity is obtained due to extremely low dark current ( pA, even for VB = 40 V), and high responsivity, in the wavelength range of 320 nm - 380 nm. The highest responsivity obtained for the measured devices is 255 A/W, at VB = 50 V and excitation wavelength of 353 nm.

AB - Fabrication and systematic characterization of GaN/Si(111)-based visible-blind ultraviolet photodetectors, with Pt/Au contacts, is reported. We demonstrate a record-high detectivity of 4.93x1014 Jones, for bias voltages exceeding VB = 14 V. The high detectivity is obtained due to extremely low dark current ( pA, even for VB = 40 V), and high responsivity, in the wavelength range of 320 nm - 380 nm. The highest responsivity obtained for the measured devices is 255 A/W, at VB = 50 V and excitation wavelength of 353 nm.

KW - GaN

KW - Schottky contacts

KW - UV Photodetector

UR - http://www.scopus.com/inward/record.url?scp=85160544432&partnerID=8YFLogxK

U2 - 10.1109/ICEE56203.2022.10117858

DO - 10.1109/ICEE56203.2022.10117858

M3 - Conference article in proceedings

SP - 809

EP - 811

BT - 2022 IEEE International Conference on Emerging Electronics (ICEE 2022)

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)

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Keywords

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