High etch selectivity for plasma etching SiO2 with AlN and Al2O3 masks

Kai Kolari

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)

Abstract

SiO2 has been etched with high etching selectivity to Al2O3 and AlN masks using inductively coupled plasma. This offers a possibility to use very thin masks for deep etching of glass for e.g. microfluidic devices. Furthermore, SiO2 can be etched with very low etching selectivity to the mentioned masks, indicating a possibility to pattern the Al2O3 and AlN with SiO2 or photoresist mask. A process based on a mixture of SF6 and C4F8 was observed to etch SiO2 with a rate of about 100 nm/min at 250 V bias (peak-to-peak) voltage, when Al2O3 and AlN had a zero etch rate. A process based on pure C4F8 was observed to etch Al2O3 and AlN with about 350 V bias, when SiO2 etch rate was still zero.
Original languageEnglish
Pages (from-to)985-987
JournalMicroelectronic Engineering
Volume85
Issue number5-6
DOIs
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

Fingerprint

Plasma etching
plasma etching
Masks
masks
selectivity
Etching
etching
microfluidic devices
Inductively coupled plasma
Photoresists
Microfluidics
photoresists
Glass
glass
Electric potential
electric potential

Keywords

  • Plasma etching
  • Glass
  • Selectivity
  • Aluminium nitride
  • Aluminium oxide

Cite this

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title = "High etch selectivity for plasma etching SiO2 with AlN and Al2O3 masks",
abstract = "SiO2 has been etched with high etching selectivity to Al2O3 and AlN masks using inductively coupled plasma. This offers a possibility to use very thin masks for deep etching of glass for e.g. microfluidic devices. Furthermore, SiO2 can be etched with very low etching selectivity to the mentioned masks, indicating a possibility to pattern the Al2O3 and AlN with SiO2 or photoresist mask. A process based on a mixture of SF6 and C4F8 was observed to etch SiO2 with a rate of about 100 nm/min at 250 V bias (peak-to-peak) voltage, when Al2O3 and AlN had a zero etch rate. A process based on pure C4F8 was observed to etch Al2O3 and AlN with about 350 V bias, when SiO2 etch rate was still zero.",
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author = "Kai Kolari",
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High etch selectivity for plasma etching SiO2 with AlN and Al2O3 masks. / Kolari, Kai.

In: Microelectronic Engineering, Vol. 85, No. 5-6, 2008, p. 985-987.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - High etch selectivity for plasma etching SiO2 with AlN and Al2O3 masks

AU - Kolari, Kai

PY - 2008

Y1 - 2008

N2 - SiO2 has been etched with high etching selectivity to Al2O3 and AlN masks using inductively coupled plasma. This offers a possibility to use very thin masks for deep etching of glass for e.g. microfluidic devices. Furthermore, SiO2 can be etched with very low etching selectivity to the mentioned masks, indicating a possibility to pattern the Al2O3 and AlN with SiO2 or photoresist mask. A process based on a mixture of SF6 and C4F8 was observed to etch SiO2 with a rate of about 100 nm/min at 250 V bias (peak-to-peak) voltage, when Al2O3 and AlN had a zero etch rate. A process based on pure C4F8 was observed to etch Al2O3 and AlN with about 350 V bias, when SiO2 etch rate was still zero.

AB - SiO2 has been etched with high etching selectivity to Al2O3 and AlN masks using inductively coupled plasma. This offers a possibility to use very thin masks for deep etching of glass for e.g. microfluidic devices. Furthermore, SiO2 can be etched with very low etching selectivity to the mentioned masks, indicating a possibility to pattern the Al2O3 and AlN with SiO2 or photoresist mask. A process based on a mixture of SF6 and C4F8 was observed to etch SiO2 with a rate of about 100 nm/min at 250 V bias (peak-to-peak) voltage, when Al2O3 and AlN had a zero etch rate. A process based on pure C4F8 was observed to etch Al2O3 and AlN with about 350 V bias, when SiO2 etch rate was still zero.

KW - Plasma etching

KW - Glass

KW - Selectivity

KW - Aluminium nitride

KW - Aluminium oxide

U2 - 10.1016/j.mee.2007.12.037

DO - 10.1016/j.mee.2007.12.037

M3 - Article

VL - 85

SP - 985

EP - 987

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 5-6

ER -