High etch selectivity for plasma etching SiO₂ with AlN and Al₂O₃ masks

Keyphrases

• Aluminum Oxide 100%
• C4F8 40%
• Deep Etching 20%
• Etch Selectivity 100%
• Etching Rate 40%
• High Etching Selectivity 20%
• Inductively Coupled Plasma 20%
• Microfluidic Device 20%
• Peak Voltage 20%
• Photoresist Mask 20%
• Plasma Etching 100%
• Process-based 40%
• Silica 100%
• SiO2 Mask 20%
• Thin Masks 20%

INIS

• aluminium nitrides 100%
• devices 20%
• etching 100%
• glass 20%
• masks 100%
• mixtures 20%
• peaks 40%
• plasma 100%
• voltage 20%

Material Science

• Al2O3 100%
• Aluminum Nitride 100%
• Plasma Etching 100%