TY - JOUR
T1 - High-Frequency Mechanical Excitation of a Silicon Nanostring with Piezoelectric Aluminum Nitride Layers
AU - Pitanti, Alessandro
AU - Makkonen, Tapani
AU - Colombano, Martin F.
AU - Zanotto, Simone
AU - Vicarelli, Leonardo
AU - Cecchini, Marco
AU - Griol, Amadeu
AU - Navarro-Urrios, Daniel
AU - Sotomayor-Torres, Clivia
AU - Martinez, Alejandro
AU - Ahopelto, Jouni
PY - 2020/7/17
Y1 - 2020/7/17
N2 - A strong trend for quantum-based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nanomechanical devices are particularly suitable for hybrid integration due to the ease of fabrication at multiscales and their pervasive coupling with electrons and photons. Here, we report on a nanomechanical technological platform where a silicon chip is combined with an aluminum nitride layer. Exploiting the AlN piezoelectricity, surface acoustic waves (SAWs) are injected in the Si layer where the material has been locally patterned and etched to form a suspended nanostring. Characterizing the nanostring vertical displacement induced by the SAW, we find an external excitation peak efficiency in excess of 500 pm/V at 1-GHz mechanical frequency. Exploiting the long-term expertise in silicon photonic and electronic devices as well as the SAW robustness and versatility, our technological platform represents a candidate for hybrid quantum systems.
AB - A strong trend for quantum-based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nanomechanical devices are particularly suitable for hybrid integration due to the ease of fabrication at multiscales and their pervasive coupling with electrons and photons. Here, we report on a nanomechanical technological platform where a silicon chip is combined with an aluminum nitride layer. Exploiting the AlN piezoelectricity, surface acoustic waves (SAWs) are injected in the Si layer where the material has been locally patterned and etched to form a suspended nanostring. Characterizing the nanostring vertical displacement induced by the SAW, we find an external excitation peak efficiency in excess of 500 pm/V at 1-GHz mechanical frequency. Exploiting the long-term expertise in silicon photonic and electronic devices as well as the SAW robustness and versatility, our technological platform represents a candidate for hybrid quantum systems.
UR - http://www.scopus.com/inward/record.url?scp=85089517642&partnerID=8YFLogxK
U2 - 10.1103/PhysRevApplied.14.014054
DO - 10.1103/PhysRevApplied.14.014054
M3 - Article
AN - SCOPUS:85089517642
SN - 2331-7019
VL - 14
JO - Physical Review Applied
JF - Physical Review Applied
IS - 1
M1 - 014054
ER -