High-Frequency Mechanical Excitation of a Silicon Nanostring with Piezoelectric Aluminum Nitride Layers

Alessandro Pitanti (Corresponding Author), Tapani Makkonen, Martin F. Colombano, Simone Zanotto, Leonardo Vicarelli, Marco Cecchini, Amadeu Griol, Daniel Navarro-Urrios, Clivia Sotomayor-Torres, Alejandro Martinez, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

Abstract

A strong trend for quantum-based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nanomechanical devices are particularly suitable for hybrid integration due to the ease of fabrication at multiscales and their pervasive coupling with electrons and photons. Here, we report on a nanomechanical technological platform where a silicon chip is combined with an aluminum nitride layer. Exploiting the AlN piezoelectricity, surface acoustic waves (SAWs) are injected in the Si layer where the material has been locally patterned and etched to form a suspended nanostring. Characterizing the nanostring vertical displacement induced by the SAW, we find an external excitation peak efficiency in excess of 500 pm/V at 1-GHz mechanical frequency. Exploiting the long-term expertise in silicon photonic and electronic devices as well as the SAW robustness and versatility, our technological platform represents a candidate for hybrid quantum systems.

Original languageEnglish
Article number014054
JournalPhysical Review Applied
Volume14
Issue number1
DOIs
Publication statusPublished - 17 Jul 2020
MoE publication typeA1 Journal article-refereed

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    Pitanti, A., Makkonen, T., Colombano, M. F., Zanotto, S., Vicarelli, L., Cecchini, M., Griol, A., Navarro-Urrios, D., Sotomayor-Torres, C., Martinez, A., & Ahopelto, J. (2020). High-Frequency Mechanical Excitation of a Silicon Nanostring with Piezoelectric Aluminum Nitride Layers. Physical Review Applied, 14(1), [014054]. https://doi.org/10.1103/PhysRevApplied.14.014054