High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Henri Jussila; Päivi Mattila; Jani Oksanen; Alexander Perros; Juha Riikonen; Markus Bosund; Aapo Varpula; Teppo Huhtio; Harri Lipsanen; Markku Sopanen

doi:10.1063/1.3687199

High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Henri Jussila (Corresponding Author), Päivi Mattila, Jani Oksanen, Alexander Perros, Juha Riikonen, Markus Bosund, Aapo Varpula, Teppo Huhtio, Harri Lipsanen, Markku Sopanen

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Abstract

This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.

Original language	English
Article number	071606
Number of pages	4
Journal	Applied Physics Letters
Volume	100
Issue number	7
DOIs	https://doi.org/10.1063/1.3687199
Publication status	Published - 2012
MoE publication type	A1 Journal article-refereed

Keywords

Atomic layer deposition
bending
Fermi level
gallium arsenide
III-V semiconductors
MIS capacitors
passivation
plasma deposition

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10.1063/1.3687199

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title = "High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning",

abstract = "This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.",

keywords = "Atomic layer deposition, bending, Fermi level, gallium arsenide, III-V semiconductors, MIS capacitors, passivation, plasma deposition",

author = "Henri Jussila and P{\"a}ivi Mattila and Jani Oksanen and Alexander Perros and Juha Riikonen and Markus Bosund and Aapo Varpula and Teppo Huhtio and Harri Lipsanen and Markku Sopanen",

year = "2012",

doi = "10.1063/1.3687199",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

AU - Jussila, Henri

AU - Mattila, Päivi

AU - Oksanen, Jani

AU - Perros, Alexander

AU - Riikonen, Juha

AU - Bosund, Markus

AU - Varpula, Aapo

AU - Huhtio, Teppo

AU - Lipsanen, Harri

AU - Sopanen, Markku

PY - 2012

Y1 - 2012

N2 - This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.

AB - This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.

KW - Atomic layer deposition

KW - bending

KW - Fermi level

KW - gallium arsenide

KW - III-V semiconductors

KW - MIS capacitors

KW - passivation

KW - plasma deposition

U2 - 10.1063/1.3687199

DO - 10.1063/1.3687199

M3 - Article

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071606

ER -

High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

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Keywords

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