High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Henri Jussila (Corresponding Author), Päivi Mattila, Jani Oksanen, Alexander Perros, Juha Riikonen, Markus Bosund, Aapo Varpula, Teppo Huhtio, Harri Lipsanen, Markku Sopanen

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    Abstract

    This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.
    Original languageEnglish
    Article number071606
    Number of pages4
    JournalApplied Physics Letters
    Volume100
    Issue number7
    DOIs
    Publication statusPublished - 2012
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Atomic layer deposition
    • bending
    • Fermi level
    • gallium arsenide
    • III-V semiconductors
    • MIS capacitors
    • passivation
    • plasma deposition

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    Jussila, H., Mattila, P., Oksanen, J., Perros, A., Riikonen, J., Bosund, M., Varpula, A., Huhtio, T., Lipsanen, H., & Sopanen, M. (2012). High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning. Applied Physics Letters, 100(7), [071606]. https://doi.org/10.1063/1.3687199