High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Henri Jussila (Corresponding Author), Päivi Mattila, Jani Oksanen, Alexander Perros, Juha Riikonen, Markus Bosund, Aapo Varpula, Teppo Huhtio, Harri Lipsanen, Markku Sopanen

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.
Original languageEnglish
Article number071606
Number of pages4
JournalApplied Physics Letters
Volume100
Issue number7
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Fingerprint

MIS (semiconductors)
capacitors
inversions
atomic layer epitaxy
passivity
capacitance
illumination
insulators
fabrication
oxides
temperature

Keywords

  • Atomic layer deposition
  • bending
  • Fermi level
  • gallium arsenide
  • III-V semiconductors
  • MIS capacitors
  • passivation
  • plasma deposition

Cite this

Jussila, Henri ; Mattila, Päivi ; Oksanen, Jani ; Perros, Alexander ; Riikonen, Juha ; Bosund, Markus ; Varpula, Aapo ; Huhtio, Teppo ; Lipsanen, Harri ; Sopanen, Markku. / High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning. In: Applied Physics Letters. 2012 ; Vol. 100, No. 7.
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abstract = "This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.",
keywords = "Atomic layer deposition, bending, Fermi level, gallium arsenide, III-V semiconductors, MIS capacitors, passivation, plasma deposition",
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Jussila, H, Mattila, P, Oksanen, J, Perros, A, Riikonen, J, Bosund, M, Varpula, A, Huhtio, T, Lipsanen, H & Sopanen, M 2012, 'High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning', Applied Physics Letters, vol. 100, no. 7, 071606. https://doi.org/10.1063/1.3687199

High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning. / Jussila, Henri (Corresponding Author); Mattila, Päivi; Oksanen, Jani; Perros, Alexander; Riikonen, Juha; Bosund, Markus; Varpula, Aapo; Huhtio, Teppo; Lipsanen, Harri; Sopanen, Markku.

In: Applied Physics Letters, Vol. 100, No. 7, 071606, 2012.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

AU - Jussila, Henri

AU - Mattila, Päivi

AU - Oksanen, Jani

AU - Perros, Alexander

AU - Riikonen, Juha

AU - Bosund, Markus

AU - Varpula, Aapo

AU - Huhtio, Teppo

AU - Lipsanen, Harri

AU - Sopanen, Markku

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KW - Atomic layer deposition

KW - bending

KW - Fermi level

KW - gallium arsenide

KW - III-V semiconductors

KW - MIS capacitors

KW - passivation

KW - plasma deposition

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JO - Applied Physics Letters

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