High interface recombination velocity caused by spatially indirect quantum well transition in Al0.55In0.45As/InP heteroface solar cells

J. Lammasniemi, K. Tappura, K. Smekalin

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

The effect of a strained Al0.55In0.45As window layer on p/n InP solar cell performance was studied. In comparison to homojunction InP solar cells, decreased quantum efficiency in the short wavelength region of the spectrum was observed in cells having the window layer. Photoluminescence measurements of the heterojunction and light emission measurements of the solar cell under forward bias revealed an intense radiative transition, which is related to the enhanced recombination of the carriers that are photogenerated in the emitter layer. This recombination occurs between the energy levels of the triangular quantum wells formed at the type II Al0.55In0.45As/InP heterojunction, and prevents effective carrier collection in the solar cell.
Original languageEnglish
JournalJournal of Applied Physics
Volume77
Issue number9
DOIs
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

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solar cells
quantum wells
heterojunctions
homojunctions
light emission
quantum efficiency
emitters
energy levels
photoluminescence
cells
wavelengths

Cite this

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title = "High interface recombination velocity caused by spatially indirect quantum well transition in Al0.55In0.45As/InP heteroface solar cells",
abstract = "The effect of a strained Al0.55In0.45As window layer on p/n InP solar cell performance was studied. In comparison to homojunction InP solar cells, decreased quantum efficiency in the short wavelength region of the spectrum was observed in cells having the window layer. Photoluminescence measurements of the heterojunction and light emission measurements of the solar cell under forward bias revealed an intense radiative transition, which is related to the enhanced recombination of the carriers that are photogenerated in the emitter layer. This recombination occurs between the energy levels of the triangular quantum wells formed at the type II Al0.55In0.45As/InP heterojunction, and prevents effective carrier collection in the solar cell.",
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High interface recombination velocity caused by spatially indirect quantum well transition in Al0.55In0.45As/InP heteroface solar cells. / Lammasniemi, J.; Tappura, K.; Smekalin, K.

In: Journal of Applied Physics, Vol. 77, No. 9, 1995.

Research output: Contribution to journalArticleScientificpeer-review

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AB - The effect of a strained Al0.55In0.45As window layer on p/n InP solar cell performance was studied. In comparison to homojunction InP solar cells, decreased quantum efficiency in the short wavelength region of the spectrum was observed in cells having the window layer. Photoluminescence measurements of the heterojunction and light emission measurements of the solar cell under forward bias revealed an intense radiative transition, which is related to the enhanced recombination of the carriers that are photogenerated in the emitter layer. This recombination occurs between the energy levels of the triangular quantum wells formed at the type II Al0.55In0.45As/InP heterojunction, and prevents effective carrier collection in the solar cell.

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