INIS
layers
100%
height
100%
barriers
100%
detection
100%
mobility
100%
field effect transistors
100%
boron nitrides
50%
applications
33%
doped materials
33%
gold
33%
wavelengths
33%
lasers
33%
scandium
33%
decay
16%
interactions
16%
nanoparticles
16%
probes
16%
energy
16%
substrates
16%
transport
16%
charges
16%
deposition
16%
signals
16%
work functions
16%
semiconductor materials
16%
curves
16%
traps
16%
scattering
16%
microscopy
16%
carriers
16%
photodetectors
16%
photocurrents
16%
transition metals
16%
rhenium selenides
16%
Keyphrases
Field-effect Transistors
100%
Light Detection
100%
High Mobility
100%
Photoresponsivity
100%
Broadband Light
100%
Schottky Barrier Height
100%
ReSe2
100%
Height-dependent
100%
Few-layer
41%
Hexagonal Boron Nitride (h-BN)
25%
Undoped
25%
Scandium Oxide
16%
Flakes
8%
Laser Wavelength
8%
Laser Light
8%
Rise Time
8%
Low Resistance
8%
Photocurrent
8%
Electronic Applications
8%
N-doping
8%
Photodetector
8%
Work Function
8%
Decay Time
8%
Scanning Kelvin Probe Force Microscopy (SKPFM)
8%
Optoelectronic Applications
8%
Transient Response
8%
Carrier Transport
8%
Semiconducting Materials
8%
Optoelectrical
8%
High Responsivity
8%
High Photoresponsivity
8%
Transfer Curves
8%
Trap States
8%
Co Nanoparticles
8%
Light Signaling
8%
Energy Band Gap
8%
Strong Light-matter Interaction
8%
Rhenium Disulfide
8%
Charge Scattering
8%
2D Transition Metal Dichalcogenides
8%
Gold Contacts
8%
Material Science
Schottky Barrier
100%
Field Effect Transistors
100%
Scandium
40%
Contact Resistance
20%
Carrier Transport
20%
Semiconducting Material
20%
Transition Metal Dichalcogenides
20%
Photosensor
20%
Rhenium
20%
Nanoparticle
20%