High-performance all-polymer transistor utilizing a hygroscopic insulator

Henrik GO Sandberg; Tomas G Bäcklund; Ronald Österbacka; Henrik Stubb

doi:10.1002/adma.200400030

High-performance all-polymer transistor utilizing a hygroscopic insulator

Henrik GO Sandberg (Corresponding Author), Tomas G Bäcklund, Ronald Österbacka, Henrik Stubb

Not published at VTT

Åbo Akademi University

Research output: Contribution to journal › Article › Scientific › peer-review

105 Citations (Scopus)

Abstract

An organic transistor is presented, showing a one‐hundred‐fold increase in current level at operating voltages around 1 V and excellent current modulation (see Figure) resulting from the ionic effects present in the hygroscopic insulator when operated in ambient atmosphere.

Original language	English
Pages (from-to)	1112-1115
Number of pages	4
Journal	Advanced Materials
Volume	16
Issue number	13
DOIs	https://doi.org/10.1002/adma.200400030
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed

Keywords

field-effect transistors
organic transistors
hygroscopic materials
poly(3-hexylthiophene)

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10.1002/adma.200400030

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@article{35309a872cef45978e22139597eec864,

title = "High-performance all-polymer transistor utilizing a hygroscopic insulator",

abstract = "An organic transistor is presented, showing a one‐hundred‐fold increase in current level at operating voltages around 1 V and excellent current modulation (see Figure) resulting from the ionic effects present in the hygroscopic insulator when operated in ambient atmosphere. ",

keywords = "field-effect transistors, organic transistors, hygroscopic materials, poly(3-hexylthiophene)",

author = "Sandberg, {Henrik GO} and B{\"a}cklund, {Tomas G} and Ronald {\"O}sterbacka and Henrik Stubb",

year = "2004",

doi = "10.1002/adma.200400030",

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AU - Sandberg, Henrik GO

AU - Bäcklund, Tomas G

AU - Österbacka, Ronald

AU - Stubb, Henrik

PY - 2004

Y1 - 2004

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AB - An organic transistor is presented, showing a one‐hundred‐fold increase in current level at operating voltages around 1 V and excellent current modulation (see Figure) resulting from the ionic effects present in the hygroscopic insulator when operated in ambient atmosphere.

KW - field-effect transistors

KW - organic transistors

KW - hygroscopic materials

KW - poly(3-hexylthiophene)

U2 - 10.1002/adma.200400030

DO - 10.1002/adma.200400030

M3 - Article

SN - 0935-9648

VL - 16

SP - 1112

EP - 1115

JO - Advanced Materials

JF - Advanced Materials

IS - 13

ER -

High-performance all-polymer transistor utilizing a hygroscopic insulator

Abstract

Keywords

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