@article{93d62f76971649dbb94924c6c2727496,
title = "High performance solution processed oxide thin-film transistors with inkjet printed Ag source-drain electrodes",
abstract = "This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In2O3 semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from ∼0.03 cm2 (V s)-1 to ∼3.0 cm2 (V s)-1. The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits.",
keywords = "OtaNano",
author = "Liam Gillan and Jaakko Lepp{\"a}niemi and Kim Eiroma and Himadri Majumdar and Ari Alastalo",
note = "Funding Information: This work has received funding from European Union{\textquoteright}s Horizon 2020 Programme (H2020/2014–2020) under grant agreement no. 644631 (project ROLL-OUT) and from Academy of Finland under grant agreement no. 305450 (project ROXI). XPS data was gratefully obtained with assistance from Dr J. Lahtinen at Aalto University, OtaNano – Nanomicroscopy center (Aalto-NMC). Publisher Copyright: {\textcopyright} 2018 The Royal Society of Chemistry. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",
year = "2018",
month = jan,
day = "1",
doi = "10.1039/c7tc05679f",
language = "English",
volume = "6",
pages = "3220--3225",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry RSC",
number = "13",
}