High performance solution processed oxide thin-film transistors with inkjet printed Ag source-drain electrodes

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Abstract

This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In2O3 semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from ∼0.03 cm2 (V s)-1 to ∼3.0 cm2 (V s)-1. The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits.

Original languageEnglish
Pages (from-to)3220-3225
Number of pages6
JournalJournal of Materials Chemistry C
Volume6
Issue number13
DOIs
Publication statusPublished - 1 Jan 2018
MoE publication typeA1 Journal article-refereed

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Polyethyleneimine
Thin film transistors
Contact resistance
Oxides
Oxide films
Semiconductor materials
Fabrication
Electrodes
Networks (circuits)
Electron Transport

Cite this

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abstract = "This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In2O3 semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from ∼0.03 cm2 (V s)-1 to ∼3.0 cm2 (V s)-1. The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits.",
author = "Liam Gillan and Jaakko Lepp{\"a}niemi and Kim Eiroma and Himadri Majumdar and Ari Alastalo",
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T1 - High performance solution processed oxide thin-film transistors with inkjet printed Ag source-drain electrodes

AU - Gillan, Liam

AU - Leppäniemi, Jaakko

AU - Eiroma, Kim

AU - Majumdar, Himadri

AU - Alastalo, Ari

PY - 2018/1/1

Y1 - 2018/1/1

N2 - This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In2O3 semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from ∼0.03 cm2 (V s)-1 to ∼3.0 cm2 (V s)-1. The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits.

AB - This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In2O3 semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from ∼0.03 cm2 (V s)-1 to ∼3.0 cm2 (V s)-1. The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits.

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DO - 10.1039/c7tc05679f

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JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

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