High performance solution processed oxide thin-film transistors with inkjet printed Ag source-drain electrodes

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Abstract

This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In2O3 semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from ∼0.03 cm2 (V s)-1 to ∼3.0 cm2 (V s)-1. The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits.

Original languageEnglish
Pages (from-to)3220-3225
Number of pages6
JournalJournal of Materials Chemistry C
Volume6
Issue number13
DOIs
Publication statusPublished - 1 Jan 2018
MoE publication typeA1 Journal article-refereed

Keywords

  • OtaNano

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