High performance solution processed oxide thin-film transistors with inkjet printed Ag source-drain electrodes

This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In₂O₃ semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from ∼0.03 cm² (V s)^-1 to ∼3.0 cm² (V s)^-1. The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits.