High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure

Hui Xue, Yunyun Dai, Wonjae Kim, Yadong Wang, Xueyin Bai, Mei Qi, Kari Halonen, Harri Lipsanen, Zhipei Sun

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.

Original languageEnglish
Pages (from-to)3240–3247
Number of pages8
JournalNanoscale
Volume11
Issue number7
DOIs
Publication statusPublished - 21 Jan 2019
MoE publication typeNot Eligible

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Heterojunctions
Photodetectors
Photonic devices
Engineering technology
Optoelectronic devices
Band structure
Modulators
Transition metals
Telecommunication
Wavelength
Lasers

Cite this

Xue, H., Dai, Y., Kim, W., Wang, Y., Bai, X., Qi, M., ... Sun, Z. (2019). High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure. Nanoscale, 11(7), 3240–3247. https://doi.org/10.1039/c8nr09248f
Xue, Hui ; Dai, Yunyun ; Kim, Wonjae ; Wang, Yadong ; Bai, Xueyin ; Qi, Mei ; Halonen, Kari ; Lipsanen, Harri ; Sun, Zhipei. / High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure. In: Nanoscale. 2019 ; Vol. 11, No. 7. pp. 3240–3247.
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Xue, H, Dai, Y, Kim, W, Wang, Y, Bai, X, Qi, M, Halonen, K, Lipsanen, H & Sun, Z 2019, 'High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure', Nanoscale, vol. 11, no. 7, pp. 3240–3247. https://doi.org/10.1039/c8nr09248f

High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure. / Xue, Hui; Dai, Yunyun; Kim, Wonjae; Wang, Yadong; Bai, Xueyin; Qi, Mei; Halonen, Kari; Lipsanen, Harri; Sun, Zhipei.

In: Nanoscale, Vol. 11, No. 7, 21.01.2019, p. 3240–3247.

Research output: Contribution to journalArticleScientificpeer-review

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