Abstract
van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.
| Original language | English |
|---|---|
| Pages (from-to) | 3240–3247 |
| Number of pages | 8 |
| Journal | Nanoscale |
| Volume | 11 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 21 Jan 2019 |
| MoE publication type | Not Eligible |
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High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure. / Xue, Hui; Dai, Yunyun; Kim, Wonjae; Wang, Yadong; Bai, Xueyin; Qi, Mei; Halonen, Kari; Lipsanen, Harri; Sun, Zhipei.
In: Nanoscale, Vol. 11, No. 7, 21.01.2019, p. 3240–3247.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure
AU - Xue, Hui
AU - Dai, Yunyun
AU - Kim, Wonjae
AU - Wang, Yadong
AU - Bai, Xueyin
AU - Qi, Mei
AU - Halonen, Kari
AU - Lipsanen, Harri
AU - Sun, Zhipei
PY - 2019/1/21
Y1 - 2019/1/21
N2 - van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.
AB - van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.
UR - http://www.scopus.com/inward/record.url?scp=85061561167&partnerID=8YFLogxK
U2 - 10.1039/c8nr09248f
DO - 10.1039/c8nr09248f
M3 - Article
VL - 11
SP - 3240
EP - 3247
JO - Nanoscale
JF - Nanoscale
SN - 2040-3364
IS - 7
ER -