High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure

Hui Xue, Yunyun Dai, Wonjae Kim, Yadong Wang, Xueyin Bai, Mei Qi, Kari Halonen, Harri Lipsanen, Zhipei Sun

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)

    Abstract

    van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.

    Original languageEnglish
    Pages (from-to)3240–3247
    JournalNanoscale
    Volume11
    Issue number7
    DOIs
    Publication statusPublished - 21 Jan 2019
    MoE publication typeA1 Journal article-refereed

      Fingerprint

    Cite this

    Xue, H., Dai, Y., Kim, W., Wang, Y., Bai, X., Qi, M., Halonen, K., Lipsanen, H., & Sun, Z. (2019). High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure. Nanoscale, 11(7), 3240–3247. https://doi.org/10.1039/c8nr09248f