High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure

Hui Xue, Yunyun Dai, Wonjae Kim, Yadong Wang, Xueyin Bai, Mei Qi, Kari Halonen, Harri Lipsanen, Zhipei Sun

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.

    Original languageEnglish
    Pages (from-to)3240–3247
    Number of pages8
    JournalNanoscale
    Volume11
    Issue number7
    DOIs
    Publication statusPublished - 21 Jan 2019
    MoE publication typeNot Eligible

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    Heterojunctions
    Photodetectors
    Photonic devices
    Engineering technology
    Optoelectronic devices
    Band structure
    Modulators
    Transition metals
    Telecommunication
    Wavelength
    Lasers

    Cite this

    Xue, H., Dai, Y., Kim, W., Wang, Y., Bai, X., Qi, M., ... Sun, Z. (2019). High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure. Nanoscale, 11(7), 3240–3247. https://doi.org/10.1039/c8nr09248f
    Xue, Hui ; Dai, Yunyun ; Kim, Wonjae ; Wang, Yadong ; Bai, Xueyin ; Qi, Mei ; Halonen, Kari ; Lipsanen, Harri ; Sun, Zhipei. / High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure. In: Nanoscale. 2019 ; Vol. 11, No. 7. pp. 3240–3247.
    @article{a135785b69b94c79896efd62c88d3548,
    title = "High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure",
    abstract = "van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.",
    author = "Hui Xue and Yunyun Dai and Wonjae Kim and Yadong Wang and Xueyin Bai and Mei Qi and Kari Halonen and Harri Lipsanen and Zhipei Sun",
    year = "2019",
    month = "1",
    day = "21",
    doi = "10.1039/c8nr09248f",
    language = "English",
    volume = "11",
    pages = "3240–3247",
    journal = "Nanoscale",
    issn = "2040-3364",
    publisher = "Royal Society of Chemistry RSC",
    number = "7",

    }

    Xue, H, Dai, Y, Kim, W, Wang, Y, Bai, X, Qi, M, Halonen, K, Lipsanen, H & Sun, Z 2019, 'High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure', Nanoscale, vol. 11, no. 7, pp. 3240–3247. https://doi.org/10.1039/c8nr09248f

    High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure. / Xue, Hui; Dai, Yunyun; Kim, Wonjae; Wang, Yadong; Bai, Xueyin; Qi, Mei; Halonen, Kari; Lipsanen, Harri; Sun, Zhipei.

    In: Nanoscale, Vol. 11, No. 7, 21.01.2019, p. 3240–3247.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure

    AU - Xue, Hui

    AU - Dai, Yunyun

    AU - Kim, Wonjae

    AU - Wang, Yadong

    AU - Bai, Xueyin

    AU - Qi, Mei

    AU - Halonen, Kari

    AU - Lipsanen, Harri

    AU - Sun, Zhipei

    PY - 2019/1/21

    Y1 - 2019/1/21

    N2 - van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.

    AB - van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.

    UR - http://www.scopus.com/inward/record.url?scp=85061561167&partnerID=8YFLogxK

    U2 - 10.1039/c8nr09248f

    DO - 10.1039/c8nr09248f

    M3 - Article

    C2 - 30706932

    AN - SCOPUS:85061561167

    VL - 11

    SP - 3240

    EP - 3247

    JO - Nanoscale

    JF - Nanoscale

    SN - 2040-3364

    IS - 7

    ER -