Abstract
AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm/sup 2/ and 330 A/cm/sup 2/ for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm/sup -1/ were obtained.
| Original language | English |
|---|---|
| Journal | IEEE Photonics Technology Letters |
| Volume | 8 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1996 |
| MoE publication type | A1 Journal article-refereed |
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Tappura, K., Aarik, J., & Pessa, M. (1996). High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy. IEEE Photonics Technology Letters, 8(3). https://doi.org/10.1109/68.481103