High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

K. Tappura, J. Aarik, M. Pessa

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)

Abstract

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm/sup 2/ and 330 A/cm/sup 2/ for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm/sup -1/ were obtained.
Original languageEnglish
JournalIEEE Photonics Technology Letters
Volume8
Issue number3
DOIs
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

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Threshold current density
Quantum well lasers
quantum well lasers
Quantum efficiency
threshold currents
Molecular beam epitaxy
quantum efficiency
molecular beam epitaxy
current density
continuous radiation
Semiconductor lasers
ridges
semiconductor lasers
Wavelength
cavities
room temperature
wavelengths
Temperature

Cite this

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title = "High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy",
abstract = "AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm/sup 2/ and 330 A/cm/sup 2/ for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87-89{\%} and the internal losses of 7-10 cm/sup -1/ were obtained.",
author = "K. Tappura and J. Aarik and M. Pessa",
year = "1996",
doi = "10.1109/68.481103",
language = "English",
volume = "8",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
number = "3",

}

High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy. / Tappura, K.; Aarik, J.; Pessa, M.

In: IEEE Photonics Technology Letters, Vol. 8, No. 3, 1996.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

AU - Tappura, K.

AU - Aarik, J.

AU - Pessa, M.

PY - 1996

Y1 - 1996

N2 - AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm/sup 2/ and 330 A/cm/sup 2/ for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm/sup -1/ were obtained.

AB - AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm/sup 2/ and 330 A/cm/sup 2/ for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm/sup -1/ were obtained.

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030104443&partnerID=MN8TOARS

U2 - 10.1109/68.481103

DO - 10.1109/68.481103

M3 - Article

VL - 8

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 3

ER -