High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

K. Tappura; J. Aarik; M. Pessa

doi:10.1109/68.481103

High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

K. Tappura, J. Aarik, M. Pessa

Not published at VTT

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12 Citations (Scopus)

Abstract

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm/sup 2/ and 330 A/cm/sup 2/ for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm/sup -1/ were obtained.

Original language	English
Journal	IEEE Photonics Technology Letters
Volume	8
Issue number	3
DOIs	https://doi.org/10.1109/68.481103
Publication status	Published - 1996
MoE publication type	A1 Journal article-refereed

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title = "High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy",

abstract = "AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm/sup 2/ and 330 A/cm/sup 2/ for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm/sup -1/ were obtained.",

author = "K. Tappura and J. Aarik and M. Pessa",

year = "1996",

doi = "10.1109/68.481103",

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AU - Tappura, K.

AU - Aarik, J.

AU - Pessa, M.

PY - 1996

Y1 - 1996

N2 - AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm/sup 2/ and 330 A/cm/sup 2/ for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm/sup -1/ were obtained.

AB - AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm/sup 2/ and 330 A/cm/sup 2/ for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm/sup -1/ were obtained.

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 3

ER -

High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

Abstract

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