High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

INIS

• power 100%
• solids 100%
• lasers 100%
• molecular beam epitaxy 100%
• quantum wells 100%
• current density 66%
• quantum efficiency 66%
• threshold current 66%
• operation 33%
• length 33%
• losses 33%
• cavities 33%
• wavelengths 33%
• temperature range 0273-0400 k 33%

Keyphrases

• High Power 100%
• GaInP-AlGaInP 100%
• Quantum Dot Lasers 100%
• Solid Source Molecular Beam Epitaxy 100%
• Threshold Current Density 66%
• Room Temperature 33%
• Internal Quantum Efficiency 33%
• Cavity Length 33%
• AlGaInP 33%
• All-solid 33%
• Ridge Structure 33%
• Continuous-wave Operation 33%
• Internal Loss 33%
• Pulse Wave 33%
• Differential Quantum Efficiency 33%
• Quantum-well Laser Diode 33%
• Temperature Threshold 33%

Physics

• Quantum Well Lasers 100%
• Molecular Beam Epitaxy 100%
• Semiconductor Laser 33%
• Continuous Radiation 33%
• Room Temperature 33%