High precision neuron MOSFET structures

Arto Rantala, Sami Franssila, Kimmo Kaski, Jouko Lampinen, Markku Åberg, Pekka Kuivalainen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.
    Original languageEnglish
    Pages (from-to)155-157
    Number of pages3
    JournalElectronics Letters
    Volume35
    Issue number2
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Fingerprint Dive into the research topics of 'High precision neuron MOSFET structures'. Together they form a unique fingerprint.

    Cite this