High precision neuron MOSFET structures

Arto Rantala, Sami Franssila, Kimmo Kaski, Jouko Lampinen, Markku Åberg, Pekka Kuivalainen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.
    Original languageEnglish
    Pages (from-to)155-157
    Number of pages3
    JournalElectronics Letters
    Volume35
    Issue number2
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

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    Neurons
    Polysilicon
    Networks (circuits)
    Substrates

    Cite this

    Rantala, A., Franssila, S., Kaski, K., Lampinen, J., Åberg, M., & Kuivalainen, P. (1999). High precision neuron MOSFET structures. Electronics Letters, 35(2), 155-157. https://doi.org/10.1049/el:19990110
    Rantala, Arto ; Franssila, Sami ; Kaski, Kimmo ; Lampinen, Jouko ; Åberg, Markku ; Kuivalainen, Pekka. / High precision neuron MOSFET structures. In: Electronics Letters. 1999 ; Vol. 35, No. 2. pp. 155-157.
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    abstract = "Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.",
    author = "Arto Rantala and Sami Franssila and Kimmo Kaski and Jouko Lampinen and Markku {\AA}berg and Pekka Kuivalainen",
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    Rantala, A, Franssila, S, Kaski, K, Lampinen, J, Åberg, M & Kuivalainen, P 1999, 'High precision neuron MOSFET structures', Electronics Letters, vol. 35, no. 2, pp. 155-157. https://doi.org/10.1049/el:19990110

    High precision neuron MOSFET structures. / Rantala, Arto; Franssila, Sami; Kaski, Kimmo; Lampinen, Jouko; Åberg, Markku; Kuivalainen, Pekka.

    In: Electronics Letters, Vol. 35, No. 2, 1999, p. 155-157.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - High precision neuron MOSFET structures

    AU - Rantala, Arto

    AU - Franssila, Sami

    AU - Kaski, Kimmo

    AU - Lampinen, Jouko

    AU - Åberg, Markku

    AU - Kuivalainen, Pekka

    PY - 1999

    Y1 - 1999

    N2 - Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.

    AB - Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.

    U2 - 10.1049/el:19990110

    DO - 10.1049/el:19990110

    M3 - Article

    VL - 35

    SP - 155

    EP - 157

    JO - Electronics Letters

    JF - Electronics Letters

    SN - 0013-5194

    IS - 2

    ER -

    Rantala A, Franssila S, Kaski K, Lampinen J, Åberg M, Kuivalainen P. High precision neuron MOSFET structures. Electronics Letters. 1999;35(2):155-157. https://doi.org/10.1049/el:19990110