High precision neuron MOSFET structures

Arto Rantala, Sami Franssila, Kimmo Kaski, Jouko Lampinen, Markku Åberg, Pekka Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.
Original languageEnglish
Pages (from-to)155-157
Number of pages3
JournalElectronics Letters
Volume35
Issue number2
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

Fingerprint

Neurons
Polysilicon
Networks (circuits)
Substrates

Cite this

Rantala, A., Franssila, S., Kaski, K., Lampinen, J., Åberg, M., & Kuivalainen, P. (1999). High precision neuron MOSFET structures. Electronics Letters, 35(2), 155-157. https://doi.org/10.1049/el:19990110
Rantala, Arto ; Franssila, Sami ; Kaski, Kimmo ; Lampinen, Jouko ; Åberg, Markku ; Kuivalainen, Pekka. / High precision neuron MOSFET structures. In: Electronics Letters. 1999 ; Vol. 35, No. 2. pp. 155-157.
@article{a9c1735b1cd247c89deac5346698439e,
title = "High precision neuron MOSFET structures",
abstract = "Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.",
author = "Arto Rantala and Sami Franssila and Kimmo Kaski and Jouko Lampinen and Markku {\AA}berg and Pekka Kuivalainen",
year = "1999",
doi = "10.1049/el:19990110",
language = "English",
volume = "35",
pages = "155--157",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology IET",
number = "2",

}

Rantala, A, Franssila, S, Kaski, K, Lampinen, J, Åberg, M & Kuivalainen, P 1999, 'High precision neuron MOSFET structures', Electronics Letters, vol. 35, no. 2, pp. 155-157. https://doi.org/10.1049/el:19990110

High precision neuron MOSFET structures. / Rantala, Arto; Franssila, Sami; Kaski, Kimmo; Lampinen, Jouko; Åberg, Markku; Kuivalainen, Pekka.

In: Electronics Letters, Vol. 35, No. 2, 1999, p. 155-157.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - High precision neuron MOSFET structures

AU - Rantala, Arto

AU - Franssila, Sami

AU - Kaski, Kimmo

AU - Lampinen, Jouko

AU - Åberg, Markku

AU - Kuivalainen, Pekka

PY - 1999

Y1 - 1999

N2 - Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.

AB - Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.

U2 - 10.1049/el:19990110

DO - 10.1049/el:19990110

M3 - Article

VL - 35

SP - 155

EP - 157

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 2

ER -

Rantala A, Franssila S, Kaski K, Lampinen J, Åberg M, Kuivalainen P. High precision neuron MOSFET structures. Electronics Letters. 1999;35(2):155-157. https://doi.org/10.1049/el:19990110