High precision neuron MOSFET structures

Arto Rantala, Sami Franssila, Kimmo Kaski, Jouko Lampinen, Markku Åberg, Pekka Kuivalainen

    Research output: Contribution to journalArticle

    Abstract

    Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.
    Original languageEnglish
    Pages (from-to)155-157
    Number of pages3
    JournalElectronics Letters
    Volume35
    Issue number2
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

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    Rantala, A., Franssila, S., Kaski, K., Lampinen, J., Åberg, M., & Kuivalainen, P. (1999). High precision neuron MOSFET structures. Electronics Letters, 35(2), 155-157. https://doi.org/10.1049/el:19990110