High precision neuron MOSFET structures

Arto Rantala; Sami Franssila; Kimmo Kaski; Jouko Lampinen; Markku Åberg; Pekka Kuivalainen

doi:10.1049/el:19990110

High precision neuron MOSFET structures

Arto Rantala, Sami Franssila, Kimmo Kaski, Jouko Lampinen, Markku Åberg, Pekka Kuivalainen

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.

Original language	English
Pages (from-to)	155-157
Number of pages	3
Journal	Electronics Letters
Volume	35
Issue number	2
DOIs	https://doi.org/10.1049/el:19990110
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

Access to Document

10.1049/el:19990110

Cite this

@article{a9c1735b1cd247c89deac5346698439e,

title = "High precision neuron MOSFET structures",

abstract = "Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.",

author = "Arto Rantala and Sami Franssila and Kimmo Kaski and Jouko Lampinen and Markku {\AA}berg and Pekka Kuivalainen",

year = "1999",

doi = "10.1049/el:19990110",

language = "English",

volume = "35",

pages = "155--157",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "2",

}

TY - JOUR

T1 - High precision neuron MOSFET structures

AU - Rantala, Arto

AU - Franssila, Sami

AU - Kaski, Kimmo

AU - Lampinen, Jouko

AU - Åberg, Markku

AU - Kuivalainen, Pekka

PY - 1999

Y1 - 1999

N2 - Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.

AB - Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.

U2 - 10.1049/el:19990110

DO - 10.1049/el:19990110

M3 - Article

SN - 0013-5194

VL - 35

SP - 155

EP - 157

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

High precision neuron MOSFET structures

Abstract

Access to Document

Fingerprint

Cite this