High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

V A Shah (Corresponding Author), S D Rhead, J E Halpin, O Trushkevych, E Chavez-Angel, Andrey Shchepetov, V Kachkanov, N R Wilson, M Myronov, et al

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm2. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials
Original languageEnglish
Article number144307
JournalJournal of Applied Physics
Volume115
Issue number14
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

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membranes
single crystals
electronics
platforms
agitation
crystals
integrated circuits
Q factors
germanium
roughness
wafers
photonics
interference
optical properties
fabrication
sensors
silicon
profiles

Cite this

Shah, V. A., Rhead, S. D., Halpin, J. E., Trushkevych, O., Chavez-Angel, E., Shchepetov, A., ... al, E. (2014). High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. Journal of Applied Physics, 115(14), [144307]. https://doi.org/10.1063/1.4870807
Shah, V A ; Rhead, S D ; Halpin, J E ; Trushkevych, O ; Chavez-Angel, E ; Shchepetov, Andrey ; Kachkanov, V ; Wilson, N R ; Myronov, M ; al, et. / High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. In: Journal of Applied Physics. 2014 ; Vol. 115, No. 14.
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abstract = "A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm2. We show how the optical properties change with thickness, including appearance of Fabry-P{\'e}rot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials",
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Shah, VA, Rhead, SD, Halpin, JE, Trushkevych, O, Chavez-Angel, E, Shchepetov, A, Kachkanov, V, Wilson, NR, Myronov, M & al, E 2014, 'High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry', Journal of Applied Physics, vol. 115, no. 14, 144307. https://doi.org/10.1063/1.4870807

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. / Shah, V A (Corresponding Author); Rhead, S D; Halpin, J E; Trushkevych, O; Chavez-Angel, E; Shchepetov, Andrey; Kachkanov, V; Wilson, N R; Myronov, M; al, et.

In: Journal of Applied Physics, Vol. 115, No. 14, 144307, 2014.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Shah, V A

AU - Rhead, S D

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AU - Shchepetov, Andrey

AU - Kachkanov, V

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AU - Myronov, M

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AB - A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm2. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials

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Shah VA, Rhead SD, Halpin JE, Trushkevych O, Chavez-Angel E, Shchepetov A et al. High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. Journal of Applied Physics. 2014;115(14). 144307. https://doi.org/10.1063/1.4870807