High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

V A Shah (Corresponding Author), S D Rhead, J E Halpin, O Trushkevych, E Chavez-Angel, Andrey Shchepetov, V Kachkanov, N R Wilson, M Myronov, et al

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm2. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials
    Original languageEnglish
    Article number144307
    JournalJournal of Applied Physics
    Volume115
    Issue number14
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    membranes
    single crystals
    electronics
    platforms
    agitation
    crystals
    integrated circuits
    Q factors
    germanium
    roughness
    wafers
    photonics
    interference
    optical properties
    fabrication
    sensors
    silicon
    profiles

    Cite this

    Shah, V. A., Rhead, S. D., Halpin, J. E., Trushkevych, O., Chavez-Angel, E., Shchepetov, A., ... al, E. (2014). High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. Journal of Applied Physics, 115(14), [144307]. https://doi.org/10.1063/1.4870807
    Shah, V A ; Rhead, S D ; Halpin, J E ; Trushkevych, O ; Chavez-Angel, E ; Shchepetov, Andrey ; Kachkanov, V ; Wilson, N R ; Myronov, M ; al, et. / High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. In: Journal of Applied Physics. 2014 ; Vol. 115, No. 14.
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    abstract = "A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm2. We show how the optical properties change with thickness, including appearance of Fabry-P{\'e}rot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials",
    author = "Shah, {V A} and Rhead, {S D} and Halpin, {J E} and O Trushkevych and E Chavez-Angel and Andrey Shchepetov and V Kachkanov and Wilson, {N R} and M Myronov and et al",
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    Shah, VA, Rhead, SD, Halpin, JE, Trushkevych, O, Chavez-Angel, E, Shchepetov, A, Kachkanov, V, Wilson, NR, Myronov, M & al, E 2014, 'High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry', Journal of Applied Physics, vol. 115, no. 14, 144307. https://doi.org/10.1063/1.4870807

    High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. / Shah, V A (Corresponding Author); Rhead, S D; Halpin, J E; Trushkevych, O; Chavez-Angel, E; Shchepetov, Andrey; Kachkanov, V; Wilson, N R; Myronov, M; al, et.

    In: Journal of Applied Physics, Vol. 115, No. 14, 144307, 2014.

    Research output: Contribution to journalArticleScientificpeer-review

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    T1 - High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

    AU - Shah, V A

    AU - Rhead, S D

    AU - Halpin, J E

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    AU - Shchepetov, Andrey

    AU - Kachkanov, V

    AU - Wilson, N R

    AU - Myronov, M

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    Shah VA, Rhead SD, Halpin JE, Trushkevych O, Chavez-Angel E, Shchepetov A et al. High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. Journal of Applied Physics. 2014;115(14). 144307. https://doi.org/10.1063/1.4870807