Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 651-656 |
| Number of pages | 6 |
| Journal | Optics and Laser Technology |
| Volume | 36 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2004 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- scanning near-field optical microscopy
- non-optical shear-force detection
- laser characterization
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High-sensitivity piezoelectric tube sensor for shear-force detection in scanning near-field optical microscopy. / Lindfors, Klas (Corresponding Author); Kapulainen, Markku; Ryytty, Pasi; Kaivola, Matti.
In: Optics and Laser Technology, Vol. 36, No. 8, 2004, p. 651-656.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - High-sensitivity piezoelectric tube sensor for shear-force detection in scanning near-field optical microscopy
AU - Lindfors, Klas
AU - Kapulainen, Markku
AU - Ryytty, Pasi
AU - Kaivola, Matti
PY - 2004
Y1 - 2004
N2 - An easy-to-implement non-optical shear-force detection setup for tip–sample distance regulation in scanning near-field optical microscopy is demonstrated. The detection method is based on attaching the near-field probe to a piezoelectric tube resulting in excellent mechanical contact between tip and detector. The main advantages of the method are good signal-to-background contrast and thus potential for high sensitivity. The method is demonstrated by obtaining approach curves of silicon surfaces. The suitability for optical experiments is further shown by measuring the near-field intensity distribution of the emission of a semiconductor laser.
AB - An easy-to-implement non-optical shear-force detection setup for tip–sample distance regulation in scanning near-field optical microscopy is demonstrated. The detection method is based on attaching the near-field probe to a piezoelectric tube resulting in excellent mechanical contact between tip and detector. The main advantages of the method are good signal-to-background contrast and thus potential for high sensitivity. The method is demonstrated by obtaining approach curves of silicon surfaces. The suitability for optical experiments is further shown by measuring the near-field intensity distribution of the emission of a semiconductor laser.
KW - scanning near-field optical microscopy
KW - non-optical shear-force detection
KW - laser characterization
U2 - 10.1016/j.optlastec.2004.01.018
DO - 10.1016/j.optlastec.2004.01.018
M3 - Article
VL - 36
SP - 651
EP - 656
JO - Optics and Laser Technology
JF - Optics and Laser Technology
SN - 0030-3992
IS - 8
ER -