High-speed metal-semiconductor-metal photodetectors fabricatd on SOI-substrates

Katri Honkanen, Niina Hakkarainen, Kari Määttä, Ari Kilpelä, P. Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Interdigitated metal-semiconductor-metal (MSM) Schottky diode photodetectors based on silicon-on-insulator-substrates (SOI) have attracted research interest in the past years due to their high-speed compatibility at longer wavelengths with GaAs-based MSM PD's. This paper presents DC and transient characteristics of SOI MSM PD's with different top Si layer dopings and thicknesses (0.2 µm, 0.5 µm, 1 µm, 2 µm and 4 µm). The detectors with metal finger width and spacing of 2–3 µm and active areas of 100 × 100 µm2 were fabricated by using conventional optical lithography and lift-off technique. For the p-type detectors the Schottky electrode metallization consisted of Ti/Au (60/130 nm), whereas the n-type detectors were metallized with aluminium (100 nm). I–V characteristics have been measured showing a low dark current. C–V measurements exhibit a small saturation capacitance. The speed of the detectors was investigated with a double heterostructure (DH) laser at a wavelength of 850 nm, a single heterostructure (SH) laser at 910 nm and a Ti : Sapphire laser at 800 nm. At the wavelength of 850 nm the risetime for the 0.5 µm top Si layer detector was 70 ps (bias-voltage 10 V), corresponding to 3 dB bandwidth of 5 GHz. For the detectors with thicker active top layers the bandwidths were slightly smaller, but also in the GHz-region. The results indicate that the photocarriers generated beneath the thin photoactive top Si layer deep in the bulk are isolated through the buried SiO2-layer. High speed for Si-based detectors may thus be achieved even at a long wavelength. The photoresponsivity has also been measured showing that reasonable efficiency is achievable for SOI detectors.
Original languageEnglish
Pages (from-to)127-130
Number of pages4
JournalPhysica Scripta
Volume1999
Issue numberT79
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed
Event18th Nordic Semiconductor Meeting , 18NSM - Linköping, Sweden
Duration: 8 Jun 199810 Jun 1998

Fingerprint

Silicon-on-insulator
Photodetector
photometers
Semiconductors
High Speed
Metals
Substrate
Detector
high speed
insulators
detectors
silicon
metals
Wavelength
Heterostructures
Laser
wavelengths
Bandwidth
lasers
bandwidth

Cite this

Honkanen, K., Hakkarainen, N., Määttä, K., Kilpelä, A., & Kuivalainen, P. (1999). High-speed metal-semiconductor-metal photodetectors fabricatd on SOI-substrates. Physica Scripta, 1999(T79), 127-130. https://doi.org/10.1238/Physica.Topical.079a00127
Honkanen, Katri ; Hakkarainen, Niina ; Määttä, Kari ; Kilpelä, Ari ; Kuivalainen, P. / High-speed metal-semiconductor-metal photodetectors fabricatd on SOI-substrates. In: Physica Scripta. 1999 ; Vol. 1999, No. T79. pp. 127-130.
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title = "High-speed metal-semiconductor-metal photodetectors fabricatd on SOI-substrates",
abstract = "Interdigitated metal-semiconductor-metal (MSM) Schottky diode photodetectors based on silicon-on-insulator-substrates (SOI) have attracted research interest in the past years due to their high-speed compatibility at longer wavelengths with GaAs-based MSM PD's. This paper presents DC and transient characteristics of SOI MSM PD's with different top Si layer dopings and thicknesses (0.2 µm, 0.5 µm, 1 µm, 2 µm and 4 µm). The detectors with metal finger width and spacing of 2–3 µm and active areas of 100 × 100 µm2 were fabricated by using conventional optical lithography and lift-off technique. For the p-type detectors the Schottky electrode metallization consisted of Ti/Au (60/130 nm), whereas the n-type detectors were metallized with aluminium (100 nm). I–V characteristics have been measured showing a low dark current. C–V measurements exhibit a small saturation capacitance. The speed of the detectors was investigated with a double heterostructure (DH) laser at a wavelength of 850 nm, a single heterostructure (SH) laser at 910 nm and a Ti : Sapphire laser at 800 nm. At the wavelength of 850 nm the risetime for the 0.5 µm top Si layer detector was 70 ps (bias-voltage 10 V), corresponding to 3 dB bandwidth of 5 GHz. For the detectors with thicker active top layers the bandwidths were slightly smaller, but also in the GHz-region. The results indicate that the photocarriers generated beneath the thin photoactive top Si layer deep in the bulk are isolated through the buried SiO2-layer. High speed for Si-based detectors may thus be achieved even at a long wavelength. The photoresponsivity has also been measured showing that reasonable efficiency is achievable for SOI detectors.",
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Honkanen, K, Hakkarainen, N, Määttä, K, Kilpelä, A & Kuivalainen, P 1999, 'High-speed metal-semiconductor-metal photodetectors fabricatd on SOI-substrates', Physica Scripta, vol. 1999, no. T79, pp. 127-130. https://doi.org/10.1238/Physica.Topical.079a00127

High-speed metal-semiconductor-metal photodetectors fabricatd on SOI-substrates. / Honkanen, Katri; Hakkarainen, Niina; Määttä, Kari; Kilpelä, Ari; Kuivalainen, P.

In: Physica Scripta, Vol. 1999, No. T79, 1999, p. 127-130.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - High-speed metal-semiconductor-metal photodetectors fabricatd on SOI-substrates

AU - Honkanen, Katri

AU - Hakkarainen, Niina

AU - Määttä, Kari

AU - Kilpelä, Ari

AU - Kuivalainen, P.

PY - 1999

Y1 - 1999

N2 - Interdigitated metal-semiconductor-metal (MSM) Schottky diode photodetectors based on silicon-on-insulator-substrates (SOI) have attracted research interest in the past years due to their high-speed compatibility at longer wavelengths with GaAs-based MSM PD's. This paper presents DC and transient characteristics of SOI MSM PD's with different top Si layer dopings and thicknesses (0.2 µm, 0.5 µm, 1 µm, 2 µm and 4 µm). The detectors with metal finger width and spacing of 2–3 µm and active areas of 100 × 100 µm2 were fabricated by using conventional optical lithography and lift-off technique. For the p-type detectors the Schottky electrode metallization consisted of Ti/Au (60/130 nm), whereas the n-type detectors were metallized with aluminium (100 nm). I–V characteristics have been measured showing a low dark current. C–V measurements exhibit a small saturation capacitance. The speed of the detectors was investigated with a double heterostructure (DH) laser at a wavelength of 850 nm, a single heterostructure (SH) laser at 910 nm and a Ti : Sapphire laser at 800 nm. At the wavelength of 850 nm the risetime for the 0.5 µm top Si layer detector was 70 ps (bias-voltage 10 V), corresponding to 3 dB bandwidth of 5 GHz. For the detectors with thicker active top layers the bandwidths were slightly smaller, but also in the GHz-region. The results indicate that the photocarriers generated beneath the thin photoactive top Si layer deep in the bulk are isolated through the buried SiO2-layer. High speed for Si-based detectors may thus be achieved even at a long wavelength. The photoresponsivity has also been measured showing that reasonable efficiency is achievable for SOI detectors.

AB - Interdigitated metal-semiconductor-metal (MSM) Schottky diode photodetectors based on silicon-on-insulator-substrates (SOI) have attracted research interest in the past years due to their high-speed compatibility at longer wavelengths with GaAs-based MSM PD's. This paper presents DC and transient characteristics of SOI MSM PD's with different top Si layer dopings and thicknesses (0.2 µm, 0.5 µm, 1 µm, 2 µm and 4 µm). The detectors with metal finger width and spacing of 2–3 µm and active areas of 100 × 100 µm2 were fabricated by using conventional optical lithography and lift-off technique. For the p-type detectors the Schottky electrode metallization consisted of Ti/Au (60/130 nm), whereas the n-type detectors were metallized with aluminium (100 nm). I–V characteristics have been measured showing a low dark current. C–V measurements exhibit a small saturation capacitance. The speed of the detectors was investigated with a double heterostructure (DH) laser at a wavelength of 850 nm, a single heterostructure (SH) laser at 910 nm and a Ti : Sapphire laser at 800 nm. At the wavelength of 850 nm the risetime for the 0.5 µm top Si layer detector was 70 ps (bias-voltage 10 V), corresponding to 3 dB bandwidth of 5 GHz. For the detectors with thicker active top layers the bandwidths were slightly smaller, but also in the GHz-region. The results indicate that the photocarriers generated beneath the thin photoactive top Si layer deep in the bulk are isolated through the buried SiO2-layer. High speed for Si-based detectors may thus be achieved even at a long wavelength. The photoresponsivity has also been measured showing that reasonable efficiency is achievable for SOI detectors.

U2 - 10.1238/Physica.Topical.079a00127

DO - 10.1238/Physica.Topical.079a00127

M3 - Article

VL - 1999

SP - 127

EP - 130

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - T79

ER -