High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films

Stefan Mertin, Bernd Heinz, Andrea Mazzalar, Thorsten Schmitz-Kempen, Stephan Tiedke, Tuomas Pensala

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30% or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2%). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.
    Original languageEnglish
    Title of host publication2018 IEEE International Ultrasonics Symposium, IUS 2018
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Electronic)978-1-5386-3425-7
    ISBN (Print)978-1-5386-3426-4
    DOIs
    Publication statusPublished - 2018
    MoE publication typeNot Eligible
    EventIEEE International Ultrasonics Symposium, IUS 2018 - Kobe, Japan
    Duration: 22 Oct 201825 Oct 2018

    Conference

    ConferenceIEEE International Ultrasonics Symposium, IUS 2018
    Abbreviated titleIUS 2018
    CountryJapan
    CityKobe
    Period22/10/1825/10/18

    Keywords

    • OtaNano

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    Mertin, S., Heinz, B., Mazzalar, A., Schmitz-Kempen, T., Tiedke, S., & Pensala, T. (2018). High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. In 2018 IEEE International Ultrasonics Symposium, IUS 2018 [8580120] IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ULTSYM.2018.8580120