High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films

Stefan Mertin, Bernd Heinz, Andrea Mazzalar, Thorsten Schmitz-Kempen, Stephan Tiedke, Tuomas Pensala

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30% or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2%). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.
    Original languageEnglish
    Title of host publication2018 IEEE International Ultrasonics Symposium, IUS 2018
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Electronic)978-1-5386-3425-7
    ISBN (Print)978-1-5386-3426-4
    DOIs
    Publication statusPublished - 2018
    MoE publication typeNot Eligible
    EventIEEE International Ultrasonics Symposium, IUS 2018 - Kobe, Japan
    Duration: 22 Oct 201825 Oct 2018

    Conference

    ConferenceIEEE International Ultrasonics Symposium, IUS 2018
    Abbreviated titleIUS 2018
    CountryJapan
    CityKobe
    Period22/10/1825/10/18

    Fingerprint

    aluminum nitrides
    thin films
    wafers
    scandium
    coefficients
    actuation
    dielectric loss
    microelectromechanical systems
    manufacturing
    permittivity

    Cite this

    Mertin, S., Heinz, B., Mazzalar, A., Schmitz-Kempen, T., Tiedke, S., & Pensala, T. (2018). High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. In 2018 IEEE International Ultrasonics Symposium, IUS 2018 [8580120] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ULTSYM.2018.8580120
    Mertin, Stefan ; Heinz, Bernd ; Mazzalar, Andrea ; Schmitz-Kempen, Thorsten ; Tiedke, Stephan ; Pensala, Tuomas. / High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. 2018 IEEE International Ultrasonics Symposium, IUS 2018. IEEE Institute of Electrical and Electronic Engineers , 2018.
    @inproceedings{c7fec603d02d40fd948487e54220c658,
    title = "High-Volume Production and Non-Destructive Piezo-Property Mapping of 33{\%} SC Doped Aluminium Nitride Thin Films",
    abstract = "Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30{\%} or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2{\%}). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.",
    author = "Stefan Mertin and Bernd Heinz and Andrea Mazzalar and Thorsten Schmitz-Kempen and Stephan Tiedke and Tuomas Pensala",
    year = "2018",
    doi = "10.1109/ULTSYM.2018.8580120",
    language = "English",
    isbn = "978-1-5386-3426-4",
    booktitle = "2018 IEEE International Ultrasonics Symposium, IUS 2018",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    address = "United States",

    }

    Mertin, S, Heinz, B, Mazzalar, A, Schmitz-Kempen, T, Tiedke, S & Pensala, T 2018, High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. in 2018 IEEE International Ultrasonics Symposium, IUS 2018., 8580120, IEEE Institute of Electrical and Electronic Engineers , IEEE International Ultrasonics Symposium, IUS 2018, Kobe, Japan, 22/10/18. https://doi.org/10.1109/ULTSYM.2018.8580120

    High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. / Mertin, Stefan; Heinz, Bernd; Mazzalar, Andrea; Schmitz-Kempen, Thorsten; Tiedke, Stephan; Pensala, Tuomas.

    2018 IEEE International Ultrasonics Symposium, IUS 2018. IEEE Institute of Electrical and Electronic Engineers , 2018. 8580120.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films

    AU - Mertin, Stefan

    AU - Heinz, Bernd

    AU - Mazzalar, Andrea

    AU - Schmitz-Kempen, Thorsten

    AU - Tiedke, Stephan

    AU - Pensala, Tuomas

    PY - 2018

    Y1 - 2018

    N2 - Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30% or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2%). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.

    AB - Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30% or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2%). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.

    UR - http://www.scopus.com/inward/record.url?scp=85060620133&partnerID=8YFLogxK

    U2 - 10.1109/ULTSYM.2018.8580120

    DO - 10.1109/ULTSYM.2018.8580120

    M3 - Conference article in proceedings

    SN - 978-1-5386-3426-4

    BT - 2018 IEEE International Ultrasonics Symposium, IUS 2018

    PB - IEEE Institute of Electrical and Electronic Engineers

    ER -

    Mertin S, Heinz B, Mazzalar A, Schmitz-Kempen T, Tiedke S, Pensala T. High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. In 2018 IEEE International Ultrasonics Symposium, IUS 2018. IEEE Institute of Electrical and Electronic Engineers . 2018. 8580120 https://doi.org/10.1109/ULTSYM.2018.8580120