High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films

Stefan Mertin, Bernd Heinz, Andrea Mazzalar, Thorsten Schmitz-Kempen, Stephan Tiedke, Tuomas Pensala

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

Abstract

Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30% or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2%). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.
Original languageEnglish
Title of host publication2018 IEEE International Ultrasonics Symposium, IUS 2018
PublisherIEEE Institute of Electrical and Electronic Engineers
ISBN (Electronic)978-1-5386-3425-7
ISBN (Print)978-1-5386-3426-4
DOIs
Publication statusPublished - 2018
MoE publication typeNot Eligible
EventIEEE International Ultrasonics Symposium, IUS 2018 - Kobe, Japan
Duration: 22 Oct 201825 Oct 2018

Conference

ConferenceIEEE International Ultrasonics Symposium, IUS 2018
Abbreviated titleIUS 2018
CountryJapan
CityKobe
Period22/10/1825/10/18

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aluminum nitrides
thin films
wafers
scandium
coefficients
actuation
dielectric loss
microelectromechanical systems
manufacturing
permittivity

Cite this

Mertin, S., Heinz, B., Mazzalar, A., Schmitz-Kempen, T., Tiedke, S., & Pensala, T. (2018). High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. In 2018 IEEE International Ultrasonics Symposium, IUS 2018 [8580120] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ULTSYM.2018.8580120
Mertin, Stefan ; Heinz, Bernd ; Mazzalar, Andrea ; Schmitz-Kempen, Thorsten ; Tiedke, Stephan ; Pensala, Tuomas. / High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. 2018 IEEE International Ultrasonics Symposium, IUS 2018. IEEE Institute of Electrical and Electronic Engineers , 2018.
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title = "High-Volume Production and Non-Destructive Piezo-Property Mapping of 33{\%} SC Doped Aluminium Nitride Thin Films",
abstract = "Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30{\%} or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2{\%}). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.",
author = "Stefan Mertin and Bernd Heinz and Andrea Mazzalar and Thorsten Schmitz-Kempen and Stephan Tiedke and Tuomas Pensala",
year = "2018",
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Mertin, S, Heinz, B, Mazzalar, A, Schmitz-Kempen, T, Tiedke, S & Pensala, T 2018, High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. in 2018 IEEE International Ultrasonics Symposium, IUS 2018., 8580120, IEEE Institute of Electrical and Electronic Engineers , IEEE International Ultrasonics Symposium, IUS 2018, Kobe, Japan, 22/10/18. https://doi.org/10.1109/ULTSYM.2018.8580120

High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. / Mertin, Stefan; Heinz, Bernd; Mazzalar, Andrea; Schmitz-Kempen, Thorsten; Tiedke, Stephan; Pensala, Tuomas.

2018 IEEE International Ultrasonics Symposium, IUS 2018. IEEE Institute of Electrical and Electronic Engineers , 2018. 8580120.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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T1 - High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films

AU - Mertin, Stefan

AU - Heinz, Bernd

AU - Mazzalar, Andrea

AU - Schmitz-Kempen, Thorsten

AU - Tiedke, Stephan

AU - Pensala, Tuomas

PY - 2018

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N2 - Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30% or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2%). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.

AB - Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30% or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2%). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.

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M3 - Conference article in proceedings

SN - 978-1-5386-3426-4

BT - 2018 IEEE International Ultrasonics Symposium, IUS 2018

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Mertin S, Heinz B, Mazzalar A, Schmitz-Kempen T, Tiedke S, Pensala T. High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. In 2018 IEEE International Ultrasonics Symposium, IUS 2018. IEEE Institute of Electrical and Electronic Engineers . 2018. 8580120 https://doi.org/10.1109/ULTSYM.2018.8580120