# High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films

Stefan Mertin, Bernd Heinz, Andrea Mazzalar, Thorsten Schmitz-Kempen, Stephan Tiedke, Tuomas Pensala

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

### Abstract

Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30% or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2%). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.
Original language English 2018 IEEE International Ultrasonics Symposium, IUS 2018 IEEE Institute of Electrical and Electronic Engineers 978-1-5386-3425-7 978-1-5386-3426-4 https://doi.org/10.1109/ULTSYM.2018.8580120 Published - 2018 Not Eligible IEEE International Ultrasonics Symposium, IUS 2018 - Kobe, JapanDuration: 22 Oct 2018 → 25 Oct 2018

### Conference

Conference IEEE International Ultrasonics Symposium, IUS 2018 IUS 2018 Japan Kobe 22/10/18 → 25/10/18

### Fingerprint

aluminum nitrides
thin films
wafers
scandium
coefficients
actuation
dielectric loss
microelectromechanical systems
manufacturing
permittivity

### Cite this

Mertin, S., Heinz, B., Mazzalar, A., Schmitz-Kempen, T., Tiedke, S., & Pensala, T. (2018). High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. In 2018 IEEE International Ultrasonics Symposium, IUS 2018 [8580120] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ULTSYM.2018.8580120
Mertin, Stefan ; Heinz, Bernd ; Mazzalar, Andrea ; Schmitz-Kempen, Thorsten ; Tiedke, Stephan ; Pensala, Tuomas. / High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. 2018 IEEE International Ultrasonics Symposium, IUS 2018. IEEE Institute of Electrical and Electronic Engineers , 2018.
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title = "High-Volume Production and Non-Destructive Piezo-Property Mapping of 33{\%} SC Doped Aluminium Nitride Thin Films",
abstract = "Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30{\%} or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2{\%}). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.",
author = "Stefan Mertin and Bernd Heinz and Andrea Mazzalar and Thorsten Schmitz-Kempen and Stephan Tiedke and Tuomas Pensala",
year = "2018",
doi = "10.1109/ULTSYM.2018.8580120",
language = "English",
isbn = "978-1-5386-3426-4",
booktitle = "2018 IEEE International Ultrasonics Symposium, IUS 2018",
publisher = "IEEE Institute of Electrical and Electronic Engineers",

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Mertin, S, Heinz, B, Mazzalar, A, Schmitz-Kempen, T, Tiedke, S & Pensala, T 2018, High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. in 2018 IEEE International Ultrasonics Symposium, IUS 2018., 8580120, IEEE Institute of Electrical and Electronic Engineers , IEEE International Ultrasonics Symposium, IUS 2018, Kobe, Japan, 22/10/18. https://doi.org/10.1109/ULTSYM.2018.8580120

High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. / Mertin, Stefan; Heinz, Bernd; Mazzalar, Andrea; Schmitz-Kempen, Thorsten; Tiedke, Stephan; Pensala, Tuomas.

2018 IEEE International Ultrasonics Symposium, IUS 2018. IEEE Institute of Electrical and Electronic Engineers , 2018. 8580120.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films

AU - Mertin, Stefan

AU - Heinz, Bernd

AU - Mazzalar, Andrea

AU - Schmitz-Kempen, Thorsten

AU - Tiedke, Stephan

AU - Pensala, Tuomas

PY - 2018

Y1 - 2018

N2 - Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30% or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2%). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.

AB - Scandium doped aluminium nitride (ScAlN) exhibits an overall greater piezoelectric response as compared to pure aluminium nitride (AlN). Films with a Sc/(Sc+Al)content above 30% or more are of high interest for MEMS sensing and actuation, ultrasound generation, and energy harvesting applications. In this work we present the uniformity of the material properties of (002)-axis oriented $\text{Sc}_{33}\text{A}1_{67}\text{N}$ films deposited on 200-mm wafers. For this purpose, the dielectric constant $\varepsilon_{\text{r}}$ and dielectric loss tanδ, as well as the transversal and the longitudinal piezoelectric coefficients, $e_{31,\text{f}}$ and $d_{33,\text{f}}$ , were measured. Wafers exhibiting a great in-wafer uniformity of the piezoelectric coefficients up to $d_{33,\text{f}}=11.8\text{pm}/\text{V}$ and $e_{31,\text{f}}=-2.3 \text{C}/\text{m}^{2}$ were obtained ( $1\sigma$ uniformity $\approx$ 1-2%). The results are very promising for the fabrication and designing of devices, as well as for volume manufacturing.

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U2 - 10.1109/ULTSYM.2018.8580120

DO - 10.1109/ULTSYM.2018.8580120

M3 - Conference article in proceedings

SN - 978-1-5386-3426-4

BT - 2018 IEEE International Ultrasonics Symposium, IUS 2018

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Mertin S, Heinz B, Mazzalar A, Schmitz-Kempen T, Tiedke S, Pensala T. High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films. In 2018 IEEE International Ultrasonics Symposium, IUS 2018. IEEE Institute of Electrical and Electronic Engineers . 2018. 8580120 https://doi.org/10.1109/ULTSYM.2018.8580120