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Keyphrases
Non-destructive
100%
High Volume Production
100%
Wafer
100%
Piezo
100%
Property Mapping
100%
Aluminum Nitride Thin Film
100%
Doped Aluminum Nitride
100%
Actuation
50%
Material Properties
50%
Nitrides
50%
Energy Harvesting System
50%
Dielectric Constant
50%
Ultrasound
50%
Piezoelectric Response
50%
Piezoelectric Coefficient
50%
Volume Production
50%
Al Content
50%
Dielectric Loss
50%
Transversal
50%
Pure Aluminum
50%
σ-Uniformity
50%
Longitudinal piezoelectric Coefficient
50%
Aluminum Scandium Nitride (AlScN)
50%
200 Mm Wafers
50%
INIS
production
100%
doped materials
100%
mapping
100%
volume
100%
thin films
100%
piezoelectricity
100%
aluminium nitrides
100%
films
66%
comparative evaluations
33%
applications
33%
devices
33%
energy
33%
losses
33%
manufacturing
33%
dielectrics
33%
fabrication
33%
harvesting
33%
dielectric constant
33%
scandium
33%
Engineering
High Volume Production
100%
Thin Films
100%
Nitride
100%
Piezoelectric Coefficient
66%
Energy Harvesting
33%
Deposited Film
33%
Piezoelectric
33%
Al Content
33%
Pure Aluminum
33%
Microelectromechanical System
33%
Dielectrics
33%
Actuation
33%
Dielectric Loss
33%
Material Science
Aluminum Nitride
100%
Piezoelectricity
100%
Thin Films
100%
Film
66%
Permittivity
33%
Scandium
33%
Materials Property
33%
Microelectromechanical System
33%
Dielectric Material
33%
Chemical Engineering
Aluminum Nitride
100%
Film
66%
Microelectromechanical System
33%