Higher-order modelling of the diffusion dynamics in a bipolar transistor

Kari Lehtinen, Markku Sipilä, Veikko Porra

Research output: Contribution to journalArticleScientificpeer-review

Abstract

A higher‐order diffusion model for a bipolar transistor has been developed. This model is based on the Padé approximation of the quasi‐static expansions of the base and collector currents and gives improved accuracy for the simulation of fast transients and periodic operation at high frequencies. the effect of higher‐order circuit elements on accuracy is demonstrated by calculating the transient response to a step excitation and by determining the scattering parameters of a transistor model with higher‐order elements linearized about an operating point. the higher‐order model is replaced by an equivalent circuit including only conventional elements, and the transient behaviour of these two models is compared.

Original languageEnglish
Pages (from-to)125 - 143
Number of pages19
JournalInternational Journal of Circuit Theory and Applications
Volume19
Issue number2
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

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Bipolar transistors
Higher Order
Modeling
Equivalent Circuit
Transient Behavior
Transient Response
Diffusion Model
Model
Scattering parameters
Transient analysis
Excitation
Equivalent circuits
Scattering
Transistors
Approximation
Networks (circuits)
Simulation

Cite this

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title = "Higher-order modelling of the diffusion dynamics in a bipolar transistor",
abstract = "A higher‐order diffusion model for a bipolar transistor has been developed. This model is based on the Pad{\'e} approximation of the quasi‐static expansions of the base and collector currents and gives improved accuracy for the simulation of fast transients and periodic operation at high frequencies. the effect of higher‐order circuit elements on accuracy is demonstrated by calculating the transient response to a step excitation and by determining the scattering parameters of a transistor model with higher‐order elements linearized about an operating point. the higher‐order model is replaced by an equivalent circuit including only conventional elements, and the transient behaviour of these two models is compared.",
author = "Kari Lehtinen and Markku Sipil{\"a} and Veikko Porra",
year = "1991",
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language = "English",
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pages = "125 -- 143",
journal = "International Journal of Circuit Theory and Applications",
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Higher-order modelling of the diffusion dynamics in a bipolar transistor. / Lehtinen, Kari; Sipilä, Markku; Porra, Veikko.

In: International Journal of Circuit Theory and Applications, Vol. 19, No. 2, 1991, p. 125 - 143.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Higher-order modelling of the diffusion dynamics in a bipolar transistor

AU - Lehtinen, Kari

AU - Sipilä, Markku

AU - Porra, Veikko

PY - 1991

Y1 - 1991

N2 - A higher‐order diffusion model for a bipolar transistor has been developed. This model is based on the Padé approximation of the quasi‐static expansions of the base and collector currents and gives improved accuracy for the simulation of fast transients and periodic operation at high frequencies. the effect of higher‐order circuit elements on accuracy is demonstrated by calculating the transient response to a step excitation and by determining the scattering parameters of a transistor model with higher‐order elements linearized about an operating point. the higher‐order model is replaced by an equivalent circuit including only conventional elements, and the transient behaviour of these two models is compared.

AB - A higher‐order diffusion model for a bipolar transistor has been developed. This model is based on the Padé approximation of the quasi‐static expansions of the base and collector currents and gives improved accuracy for the simulation of fast transients and periodic operation at high frequencies. the effect of higher‐order circuit elements on accuracy is demonstrated by calculating the transient response to a step excitation and by determining the scattering parameters of a transistor model with higher‐order elements linearized about an operating point. the higher‐order model is replaced by an equivalent circuit including only conventional elements, and the transient behaviour of these two models is compared.

U2 - 10.1002/cta.4490190203

DO - 10.1002/cta.4490190203

M3 - Article

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SP - 125

EP - 143

JO - International Journal of Circuit Theory and Applications

JF - International Journal of Circuit Theory and Applications

SN - 0098-9886

IS - 2

ER -