Highly reliable wideband switched MEMS capacitors

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

A wideband switched MEMS capacitor has been developed based on CMOS compatible surface micromachining. It has a capacitance ratio of 1:3-1:5 between its up- and down-states depending on the applied bias voltage. The measurement results show that the switched capacitor has good microwave performance (S11 better than -28 dB up to 40 GHz with S21 better than 0.5 dB in the up-state). Very good reliability has been demonstrated by hot switching (18 dBm at 26 GHz) the component 50 million times with 10 Hz switching frequency (50% duty cycle) which results in totally more than 1000 hour downstate time. This corresponds tens of billions cycles if kilohertz switching frequency is used. The component was fully functional after the test.
Original languageEnglish
Title of host publicationMEMSWAVE 2006: Proceedings of the 7th International Conference on RF MEMS and RF Microsystems
Pages172-174
Publication statusPublished - 2006
MoE publication typeNot Eligible
Event7th International Conference on RF MEMS and RF Microsystems, MEMSWAVE 2006 - Orvieto, Italy
Duration: 27 Jun 200630 Jun 2006

Conference

Conference7th International Conference on RF MEMS and RF Microsystems, MEMSWAVE 2006
CountryItaly
CityOrvieto
Period27/06/0630/06/06

Keywords

  • Switched capacitor
  • Varactor
  • RF MEMS
  • MEMS
  • CMOS

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  • Cite this

    Vähä-Heikkilä, T., & Ylönen, M. (2006). Highly reliable wideband switched MEMS capacitors. In MEMSWAVE 2006: Proceedings of the 7th International Conference on RF MEMS and RF Microsystems (pp. 172-174)