Highly reliable wideband switched MEMS capacitors

Tauno Vähä-Heikkilä; Mari Ylönen

Highly reliable wideband switched MEMS capacitors

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

A wideband switched MEMS capacitor has been developed based on CMOS compatible surface micromachining. It has a capacitance ratio of 1:3-1:5 between its up- and down-states depending on the applied bias voltage. The measurement results show that the switched capacitor has good microwave performance (S11 better than -28 dB up to 40 GHz with S21 better than 0.5 dB in the up-state). Very good reliability has been demonstrated by hot switching (18 dBm at 26 GHz) the component 50 million times with 10 Hz switching frequency (50% duty cycle) which results in totally more than 1000 hour downstate time. This corresponds tens of billions cycles if kilohertz switching frequency is used. The component was fully functional after the test.

Original language	English
Title of host publication	MEMSWAVE 2006: Proceedings of the 7th International Conference on RF MEMS and RF Microsystems
Pages	172-174
Publication status	Published - 2006
MoE publication type	Not Eligible
Event	7th International Conference on RF MEMS and RF Microsystems, MEMSWAVE 2006 - Orvieto, Italy Duration: 27 Jun 2006 → 30 Jun 2006

Conference

Conference	7th International Conference on RF MEMS and RF Microsystems, MEMSWAVE 2006
Country	Italy
City	Orvieto
Period	27/06/06 → 30/06/06

Keywords

Switched capacitor
Varactor
RF MEMS
MEMS
CMOS

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@inproceedings{7041c1a36d5b46d9946d22b0c2d1f5b9,

title = "Highly reliable wideband switched MEMS capacitors",

abstract = "A wideband switched MEMS capacitor has been developed based on CMOS compatible surface micromachining. It has a capacitance ratio of 1:3-1:5 between its up- and down-states depending on the applied bias voltage. The measurement results show that the switched capacitor has good microwave performance (S11 better than -28 dB up to 40 GHz with S21 better than 0.5 dB in the up-state). Very good reliability has been demonstrated by hot switching (18 dBm at 26 GHz) the component 50 million times with 10 Hz switching frequency (50% duty cycle) which results in totally more than 1000 hour downstate time. This corresponds tens of billions cycles if kilohertz switching frequency is used. The component was fully functional after the test.",

keywords = "Switched capacitor, Varactor, RF MEMS, MEMS, CMOS",

author = "Tauno V{\"a}h{\"a}-Heikkil{\"a} and Mari Yl{\"o}nen",

note = "No ISBN/ISSN found for the proceedings Table of Contents: http://www.gbv.de/dms/tib-ub-hannover/517171260.pdf; 7th International Conference on RF MEMS and RF Microsystems, MEMSWAVE 2006 ; Conference date: 27-06-2006 Through 30-06-2006",

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language = "English",

pages = "172--174",

booktitle = "MEMSWAVE 2006: Proceedings of the 7th International Conference on RF MEMS and RF Microsystems",

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TY - GEN

T1 - Highly reliable wideband switched MEMS capacitors

AU - Vähä-Heikkilä, Tauno

AU - Ylönen, Mari

N1 - No ISBN/ISSN found for the proceedings Table of Contents: http://www.gbv.de/dms/tib-ub-hannover/517171260.pdf

PY - 2006

Y1 - 2006

N2 - A wideband switched MEMS capacitor has been developed based on CMOS compatible surface micromachining. It has a capacitance ratio of 1:3-1:5 between its up- and down-states depending on the applied bias voltage. The measurement results show that the switched capacitor has good microwave performance (S11 better than -28 dB up to 40 GHz with S21 better than 0.5 dB in the up-state). Very good reliability has been demonstrated by hot switching (18 dBm at 26 GHz) the component 50 million times with 10 Hz switching frequency (50% duty cycle) which results in totally more than 1000 hour downstate time. This corresponds tens of billions cycles if kilohertz switching frequency is used. The component was fully functional after the test.

AB - A wideband switched MEMS capacitor has been developed based on CMOS compatible surface micromachining. It has a capacitance ratio of 1:3-1:5 between its up- and down-states depending on the applied bias voltage. The measurement results show that the switched capacitor has good microwave performance (S11 better than -28 dB up to 40 GHz with S21 better than 0.5 dB in the up-state). Very good reliability has been demonstrated by hot switching (18 dBm at 26 GHz) the component 50 million times with 10 Hz switching frequency (50% duty cycle) which results in totally more than 1000 hour downstate time. This corresponds tens of billions cycles if kilohertz switching frequency is used. The component was fully functional after the test.

KW - Switched capacitor

KW - Varactor

KW - RF MEMS

KW - MEMS

KW - CMOS

M3 - Conference article in proceedings

SP - 172

EP - 174

BT - MEMSWAVE 2006: Proceedings of the 7th International Conference on RF MEMS and RF Microsystems

T2 - 7th International Conference on RF MEMS and RF Microsystems, MEMSWAVE 2006

Y2 - 27 June 2006 through 30 June 2006

ER -