Highly Sensitive Superconducting Quantum-Interference Proximity Transistor

Alberto Ronzani, Carles Altimiras (Corresponding Author), Francesco Giazotto

Research output: Contribution to journalArticleScientificpeer-review

28 Citations (Scopus)

Abstract

We report the design and implementation of a high-performance superconducting quantum-interference proximity transistor based on aluminum-copper technology. With the adoption of a thin and short copper nanowire, we demonstrate full phase-driven modulation of the proximity-induced minigap in the normal-metal density of states. Under optimal bias, we record unprecedentedly high flux-to-voltage (up to 3 mV/Φ0) and flux-to-current (exceeding 100 nA/Φ0) transfer function values at subkelvin temperatures, where Φ0 is the flux quantum. The best magnetic-flux resolution (as low as 500nΦ0/Hz at 240 mK being limited by the room-temperature preamplification stage) is reached under fixed current bias. These figures of merit combined with ultralow power dissipation and micrometer-size dimensions make this mesoscopic interferometer attractive for low-temperature applications such as the investigation of the magnetization of small spin populations.

Original languageEnglish
Article number024005
JournalPhysical Review Applied
Volume2
Issue number2
DOIs
Publication statusPublished - 11 Aug 2014
MoE publication typeA1 Journal article-refereed

Fingerprint

proximity
transistors
interference
copper
figure of merit
transfer functions
magnetic flux
micrometers
nanowires
dissipation
interferometers
aluminum
modulation
magnetization
electric potential
room temperature
metals
temperature

Cite this

@article{8b08645fc8d1439bb356530668756297,
title = "Highly Sensitive Superconducting Quantum-Interference Proximity Transistor",
abstract = "We report the design and implementation of a high-performance superconducting quantum-interference proximity transistor based on aluminum-copper technology. With the adoption of a thin and short copper nanowire, we demonstrate full phase-driven modulation of the proximity-induced minigap in the normal-metal density of states. Under optimal bias, we record unprecedentedly high flux-to-voltage (up to 3 mV/Φ0) and flux-to-current (exceeding 100 nA/Φ0) transfer function values at subkelvin temperatures, where Φ0 is the flux quantum. The best magnetic-flux resolution (as low as 500nΦ0/Hz at 240 mK being limited by the room-temperature preamplification stage) is reached under fixed current bias. These figures of merit combined with ultralow power dissipation and micrometer-size dimensions make this mesoscopic interferometer attractive for low-temperature applications such as the investigation of the magnetization of small spin populations.",
author = "Alberto Ronzani and Carles Altimiras and Francesco Giazotto",
year = "2014",
month = "8",
day = "11",
doi = "10.1103/PhysRevApplied.2.024005",
language = "English",
volume = "2",
journal = "Physical Review Applied",
issn = "2331-7019",
publisher = "American Physical Society",
number = "2",

}

Highly Sensitive Superconducting Quantum-Interference Proximity Transistor. / Ronzani, Alberto; Altimiras, Carles (Corresponding Author); Giazotto, Francesco.

In: Physical Review Applied, Vol. 2, No. 2, 024005, 11.08.2014.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Highly Sensitive Superconducting Quantum-Interference Proximity Transistor

AU - Ronzani, Alberto

AU - Altimiras, Carles

AU - Giazotto, Francesco

PY - 2014/8/11

Y1 - 2014/8/11

N2 - We report the design and implementation of a high-performance superconducting quantum-interference proximity transistor based on aluminum-copper technology. With the adoption of a thin and short copper nanowire, we demonstrate full phase-driven modulation of the proximity-induced minigap in the normal-metal density of states. Under optimal bias, we record unprecedentedly high flux-to-voltage (up to 3 mV/Φ0) and flux-to-current (exceeding 100 nA/Φ0) transfer function values at subkelvin temperatures, where Φ0 is the flux quantum. The best magnetic-flux resolution (as low as 500nΦ0/Hz at 240 mK being limited by the room-temperature preamplification stage) is reached under fixed current bias. These figures of merit combined with ultralow power dissipation and micrometer-size dimensions make this mesoscopic interferometer attractive for low-temperature applications such as the investigation of the magnetization of small spin populations.

AB - We report the design and implementation of a high-performance superconducting quantum-interference proximity transistor based on aluminum-copper technology. With the adoption of a thin and short copper nanowire, we demonstrate full phase-driven modulation of the proximity-induced minigap in the normal-metal density of states. Under optimal bias, we record unprecedentedly high flux-to-voltage (up to 3 mV/Φ0) and flux-to-current (exceeding 100 nA/Φ0) transfer function values at subkelvin temperatures, where Φ0 is the flux quantum. The best magnetic-flux resolution (as low as 500nΦ0/Hz at 240 mK being limited by the room-temperature preamplification stage) is reached under fixed current bias. These figures of merit combined with ultralow power dissipation and micrometer-size dimensions make this mesoscopic interferometer attractive for low-temperature applications such as the investigation of the magnetization of small spin populations.

UR - http://www.scopus.com/inward/record.url?scp=84907362853&partnerID=8YFLogxK

U2 - 10.1103/PhysRevApplied.2.024005

DO - 10.1103/PhysRevApplied.2.024005

M3 - Article

AN - SCOPUS:84907362853

VL - 2

JO - Physical Review Applied

JF - Physical Review Applied

SN - 2331-7019

IS - 2

M1 - 024005

ER -