Hole-phonon energy loss rate in boron doped silicon

J.S. Richardson-Bullock, M.J. Prest, Mika Prunnila, David Gunnarsson, V.A. Shah, A. Dobble, M. Myronov, R.J.H. MOrris, T.E. Whall, E.H.C. Parker, D.R. Leadley

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    3 Citations (Scopus)

    Abstract

    The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.
    Original languageEnglish
    Title of host publicationConference proceedings
    Subtitle of host publication14th International Conference on Ultimate Integration on Silicon, ULIS 2013
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages213 - 215
    ISBN (Electronic)978-1-4673-4802-7
    ISBN (Print)978-1-4673-4800-3
    DOIs
    Publication statusPublished - 2013
    MoE publication typeNot Eligible
    Event14th International Conference on Ultimate Integration on Silicon, ULIS 2013 - Coventry, United Kingdom
    Duration: 19 Mar 201321 Mar 2013
    Conference number: 14

    Conference

    Conference14th International Conference on Ultimate Integration on Silicon, ULIS 2013
    Abbreviated titleULIS 2013
    CountryUnited Kingdom
    CityCoventry
    Period19/03/1321/03/13

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