Hole-phonon energy loss rate in boron doped silicon

J.S. Richardson-Bullock; M.J. Prest; Mika Prunnila; David Gunnarsson; V.A. Shah; A. Dobble; M. Myronov; R.J.H. MOrris; T.E. Whall; E.H.C. Parker; D.R. Leadley

doi:10.1109/ULIS.2013.6523522

Hole-phonon energy loss rate in boron doped silicon

J.S. Richardson-Bullock, M.J. Prest, Mika Prunnila, David Gunnarsson, V.A. Shah, A. Dobble, M. Myronov, R.J.H. MOrris, T.E. Whall, E.H.C. Parker, D.R. Leadley

University of Warwick

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

3 Citations (Scopus)

Abstract

The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.

Original language	English
Title of host publication	14th International Conference on Ultimate Integration on Silicon, ULIS 2013
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	213 - 215
ISBN (Electronic)	978-1-4673-4802-7, 978-1-4673-4801-0
ISBN (Print)	978-1-4673-4800-3
DOIs	https://doi.org/10.1109/ULIS.2013.6523522
Publication status	Published - 2013
MoE publication type	A4 Article in a conference publication
Event	14th International Conference on Ultimate Integration on Silicon, ULIS 2013 - Coventry, United Kingdom Duration: 19 Mar 2013 → 21 Mar 2013 Conference number: 14

Conference

Conference	14th International Conference on Ultimate Integration on Silicon, ULIS 2013
Abbreviated title	ULIS 2013
Country/Territory	United Kingdom
City	Coventry
Period	19/03/13 → 21/03/13

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10.1109/ULIS.2013.6523522

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Richardson-Bullock, J. S., Prest, M. J., Prunnila, M., Gunnarsson, D., Shah, V. A., Dobble, A., Myronov, M., MOrris, R. J. H., Whall, T. E., Parker, E. H. C., & Leadley, D. R. (2013). Hole-phonon energy loss rate in boron doped silicon. In 14th International Conference on Ultimate Integration on Silicon, ULIS 2013 (pp. 213 - 215). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ULIS.2013.6523522

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title = "Hole-phonon energy loss rate in boron doped silicon",

abstract = "The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.",

author = "J.S. Richardson-Bullock and M.J. Prest and Mika Prunnila and David Gunnarsson and V.A. Shah and A. Dobble and M. Myronov and R.J.H. MOrris and T.E. Whall and E.H.C. Parker and D.R. Leadley",

year = "2013",

doi = "10.1109/ULIS.2013.6523522",

language = "English",

isbn = "978-1-4673-4800-3",

pages = "213 -- 215",

booktitle = "14th International Conference on Ultimate Integration on Silicon, ULIS 2013",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "14th International Conference on Ultimate Integration on Silicon, ULIS 2013, ULIS 2013 ; Conference date: 19-03-2013 Through 21-03-2013",

}

Richardson-Bullock, JS, Prest, MJ, Prunnila, M, Gunnarsson, D, Shah, VA, Dobble, A, Myronov, M, MOrris, RJH, Whall, TE, Parker, EHC & Leadley, DR 2013, Hole-phonon energy loss rate in boron doped silicon. in 14th International Conference on Ultimate Integration on Silicon, ULIS 2013. IEEE Institute of Electrical and Electronic Engineers, pp. 213 - 215, 14th International Conference on Ultimate Integration on Silicon, ULIS 2013, Coventry, United Kingdom, 19/03/13. https://doi.org/10.1109/ULIS.2013.6523522

Hole-phonon energy loss rate in boron doped silicon. / Richardson-Bullock, J.S.; Prest, M.J.; Prunnila, Mika et al.

14th International Conference on Ultimate Integration on Silicon, ULIS 2013. IEEE Institute of Electrical and Electronic Engineers, 2013. p. 213 - 215.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Hole-phonon energy loss rate in boron doped silicon

AU - Richardson-Bullock, J.S.

AU - Prest, M.J.

AU - Prunnila, Mika

AU - Gunnarsson, David

AU - Shah, V.A.

AU - Dobble, A.

AU - Myronov, M.

AU - MOrris, R.J.H.

AU - Whall, T.E.

AU - Parker, E.H.C.

AU - Leadley, D.R.

N1 - Conference code: 14

PY - 2013

Y1 - 2013

N2 - The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.

AB - The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.

U2 - 10.1109/ULIS.2013.6523522

DO - 10.1109/ULIS.2013.6523522

M3 - Conference article in proceedings

SN - 978-1-4673-4800-3

SP - 213

EP - 215

BT - 14th International Conference on Ultimate Integration on Silicon, ULIS 2013

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 14th International Conference on Ultimate Integration on Silicon, ULIS 2013

Y2 - 19 March 2013 through 21 March 2013

ER -

Hole-phonon energy loss rate in boron doped silicon

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