Hole-phonon energy loss rate in boron doped silicon

J.S. Richardson-Bullock, M.J. Prest, Mika Prunnila, David Gunnarsson, V.A. Shah, A. Dobble, M. Myronov, R.J.H. MOrris, T.E. Whall, E.H.C. Parker, D.R. Leadley

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

3 Citations (Scopus)

Abstract

The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.
Original languageEnglish
Title of host publicationConference proceedings
Subtitle of host publication14th International Conference on Ultimate Integration on Silicon, ULIS 2013
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages213 - 215
ISBN (Electronic)978-1-4673-4802-7
ISBN (Print)978-1-4673-4800-3
DOIs
Publication statusPublished - 2013
MoE publication typeNot Eligible
Event14th International Conference on Ultimate Integration on Silicon, ULIS 2013 - Coventry, United Kingdom
Duration: 19 Mar 201321 Mar 2013
Conference number: 14

Conference

Conference14th International Conference on Ultimate Integration on Silicon, ULIS 2013
Abbreviated titleULIS 2013
CountryUnited Kingdom
CityCoventry
Period19/03/1321/03/13

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boron
energy dissipation
silicon
temperature
electrons

Cite this

Richardson-Bullock, J. S., Prest, M. J., Prunnila, M., Gunnarsson, D., Shah, V. A., Dobble, A., ... Leadley, D. R. (2013). Hole-phonon energy loss rate in boron doped silicon. In Conference proceedings: 14th International Conference on Ultimate Integration on Silicon, ULIS 2013 (pp. 213 - 215). Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/ULIS.2013.6523522
Richardson-Bullock, J.S. ; Prest, M.J. ; Prunnila, Mika ; Gunnarsson, David ; Shah, V.A. ; Dobble, A. ; Myronov, M. ; MOrris, R.J.H. ; Whall, T.E. ; Parker, E.H.C. ; Leadley, D.R. / Hole-phonon energy loss rate in boron doped silicon. Conference proceedings: 14th International Conference on Ultimate Integration on Silicon, ULIS 2013. Institute of Electrical and Electronic Engineers IEEE, 2013. pp. 213 - 215
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author = "J.S. Richardson-Bullock and M.J. Prest and Mika Prunnila and David Gunnarsson and V.A. Shah and A. Dobble and M. Myronov and R.J.H. MOrris and T.E. Whall and E.H.C. Parker and D.R. Leadley",
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Richardson-Bullock, JS, Prest, MJ, Prunnila, M, Gunnarsson, D, Shah, VA, Dobble, A, Myronov, M, MOrris, RJH, Whall, TE, Parker, EHC & Leadley, DR 2013, Hole-phonon energy loss rate in boron doped silicon. in Conference proceedings: 14th International Conference on Ultimate Integration on Silicon, ULIS 2013. Institute of Electrical and Electronic Engineers IEEE, pp. 213 - 215, 14th International Conference on Ultimate Integration on Silicon, ULIS 2013, Coventry, United Kingdom, 19/03/13. https://doi.org/10.1109/ULIS.2013.6523522

Hole-phonon energy loss rate in boron doped silicon. / Richardson-Bullock, J.S.; Prest, M.J.; Prunnila, Mika; Gunnarsson, David; Shah, V.A.; Dobble, A.; Myronov, M.; MOrris, R.J.H.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.

Conference proceedings: 14th International Conference on Ultimate Integration on Silicon, ULIS 2013. Institute of Electrical and Electronic Engineers IEEE, 2013. p. 213 - 215.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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T1 - Hole-phonon energy loss rate in boron doped silicon

AU - Richardson-Bullock, J.S.

AU - Prest, M.J.

AU - Prunnila, Mika

AU - Gunnarsson, David

AU - Shah, V.A.

AU - Dobble, A.

AU - Myronov, M.

AU - MOrris, R.J.H.

AU - Whall, T.E.

AU - Parker, E.H.C.

AU - Leadley, D.R.

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N2 - The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.

AB - The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.

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DO - 10.1109/ULIS.2013.6523522

M3 - Conference article in proceedings

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BT - Conference proceedings

PB - Institute of Electrical and Electronic Engineers IEEE

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Richardson-Bullock JS, Prest MJ, Prunnila M, Gunnarsson D, Shah VA, Dobble A et al. Hole-phonon energy loss rate in boron doped silicon. In Conference proceedings: 14th International Conference on Ultimate Integration on Silicon, ULIS 2013. Institute of Electrical and Electronic Engineers IEEE. 2013. p. 213 - 215 https://doi.org/10.1109/ULIS.2013.6523522