Hole-phonon energy loss rate in boron doped silicon

J.S. Richardson-Bullock, M.J. Prest, Mika Prunnila, David Gunnarsson, V.A. Shah, A. Dobble, M. Myronov, R.J.H. MOrris, T.E. Whall, E.H.C. Parker, D.R. Leadley

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    3 Citations (Scopus)

    Abstract

    The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.
    Original languageEnglish
    Title of host publicationConference proceedings
    Subtitle of host publication14th International Conference on Ultimate Integration on Silicon, ULIS 2013
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages213 - 215
    ISBN (Electronic)978-1-4673-4802-7
    ISBN (Print)978-1-4673-4800-3
    DOIs
    Publication statusPublished - 2013
    MoE publication typeNot Eligible
    Event14th International Conference on Ultimate Integration on Silicon, ULIS 2013 - Coventry, United Kingdom
    Duration: 19 Mar 201321 Mar 2013
    Conference number: 14

    Conference

    Conference14th International Conference on Ultimate Integration on Silicon, ULIS 2013
    Abbreviated titleULIS 2013
    CountryUnited Kingdom
    CityCoventry
    Period19/03/1321/03/13

    Fingerprint

    boron
    energy dissipation
    silicon
    temperature
    electrons

    Cite this

    Richardson-Bullock, J. S., Prest, M. J., Prunnila, M., Gunnarsson, D., Shah, V. A., Dobble, A., ... Leadley, D. R. (2013). Hole-phonon energy loss rate in boron doped silicon. In Conference proceedings: 14th International Conference on Ultimate Integration on Silicon, ULIS 2013 (pp. 213 - 215). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ULIS.2013.6523522
    Richardson-Bullock, J.S. ; Prest, M.J. ; Prunnila, Mika ; Gunnarsson, David ; Shah, V.A. ; Dobble, A. ; Myronov, M. ; MOrris, R.J.H. ; Whall, T.E. ; Parker, E.H.C. ; Leadley, D.R. / Hole-phonon energy loss rate in boron doped silicon. Conference proceedings: 14th International Conference on Ultimate Integration on Silicon, ULIS 2013. IEEE Institute of Electrical and Electronic Engineers , 2013. pp. 213 - 215
    @inproceedings{9675813f60cc41708eb2683f28f73259,
    title = "Hole-phonon energy loss rate in boron doped silicon",
    abstract = "The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.",
    author = "J.S. Richardson-Bullock and M.J. Prest and Mika Prunnila and David Gunnarsson and V.A. Shah and A. Dobble and M. Myronov and R.J.H. MOrris and T.E. Whall and E.H.C. Parker and D.R. Leadley",
    year = "2013",
    doi = "10.1109/ULIS.2013.6523522",
    language = "English",
    isbn = "978-1-4673-4800-3",
    pages = "213 -- 215",
    booktitle = "Conference proceedings",
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    Richardson-Bullock, JS, Prest, MJ, Prunnila, M, Gunnarsson, D, Shah, VA, Dobble, A, Myronov, M, MOrris, RJH, Whall, TE, Parker, EHC & Leadley, DR 2013, Hole-phonon energy loss rate in boron doped silicon. in Conference proceedings: 14th International Conference on Ultimate Integration on Silicon, ULIS 2013. IEEE Institute of Electrical and Electronic Engineers , pp. 213 - 215, 14th International Conference on Ultimate Integration on Silicon, ULIS 2013, Coventry, United Kingdom, 19/03/13. https://doi.org/10.1109/ULIS.2013.6523522

    Hole-phonon energy loss rate in boron doped silicon. / Richardson-Bullock, J.S.; Prest, M.J.; Prunnila, Mika; Gunnarsson, David; Shah, V.A.; Dobble, A.; Myronov, M.; MOrris, R.J.H.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.

    Conference proceedings: 14th International Conference on Ultimate Integration on Silicon, ULIS 2013. IEEE Institute of Electrical and Electronic Engineers , 2013. p. 213 - 215.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Hole-phonon energy loss rate in boron doped silicon

    AU - Richardson-Bullock, J.S.

    AU - Prest, M.J.

    AU - Prunnila, Mika

    AU - Gunnarsson, David

    AU - Shah, V.A.

    AU - Dobble, A.

    AU - Myronov, M.

    AU - MOrris, R.J.H.

    AU - Whall, T.E.

    AU - Parker, E.H.C.

    AU - Leadley, D.R.

    PY - 2013

    Y1 - 2013

    N2 - The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.

    AB - The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.

    U2 - 10.1109/ULIS.2013.6523522

    DO - 10.1109/ULIS.2013.6523522

    M3 - Conference article in proceedings

    SN - 978-1-4673-4800-3

    SP - 213

    EP - 215

    BT - Conference proceedings

    PB - IEEE Institute of Electrical and Electronic Engineers

    ER -

    Richardson-Bullock JS, Prest MJ, Prunnila M, Gunnarsson D, Shah VA, Dobble A et al. Hole-phonon energy loss rate in boron doped silicon. In Conference proceedings: 14th International Conference on Ultimate Integration on Silicon, ULIS 2013. IEEE Institute of Electrical and Electronic Engineers . 2013. p. 213 - 215 https://doi.org/10.1109/ULIS.2013.6523522