Hot Electron Transport in Submicron Semiconductor Devices

Pekka Kuivalainen, Klaus Lindberg

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Hot electron transport is studied in small semiconductor structures by solving the coupled Boltzmann and Poisson equations using a simple relaxation time model and the integral formulation of the transport equation.
Especially ballistic transport is investigated by calculating the electron distribution function f(x, v) in a submicron n+−n−−n+ diode. In the n−‐region f(x, v) is non‐Maxwellian and the ballistic electrons cause a dominant peak in f(x, v).
The validity of the relaxation time approximation (RTA) is studied in the case of a large homogeneous electric field by calculating f(x, v) both, in RTA and using the full scattering rates for polar optical phonon scattering.
Original languageEnglish
Pages (from-to)827-835
JournalPhysica Status Solidi B: Basic Research
Volume159
Issue number2
DOIs
Publication statusPublished - 1990
MoE publication typeA1 Journal article-refereed

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