Hot Electron Transport in Submicron Semiconductor Devices

Pekka Kuivalainen, Klaus Lindberg

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Hot electron transport is studied in small semiconductor structures by solving the coupled Boltzmann and Poisson equations using a simple relaxation time model and the integral formulation of the transport equation.
Especially ballistic transport is investigated by calculating the electron distribution function f(x, v) in a submicron n+−n−−n+ diode. In the n−‐region f(x, v) is non‐Maxwellian and the ballistic electrons cause a dominant peak in f(x, v).
The validity of the relaxation time approximation (RTA) is studied in the case of a large homogeneous electric field by calculating f(x, v) both, in RTA and using the full scattering rates for polar optical phonon scattering.
Original languageEnglish
Pages (from-to)827-835
JournalPhysica Status Solidi B: Basic Research
Volume159
Issue number2
DOIs
Publication statusPublished - 1990
MoE publication typeA1 Journal article-refereed

Fingerprint

Hot electrons
Semiconductor devices
semiconductor devices
hot electrons
Relaxation time
relaxation time
Ballistics
ballistics
Phonon scattering
Electrons
Boltzmann equation
Poisson equation
electron distribution
approximation
scattering
Distribution functions
Diodes
distribution functions
diodes
Electric fields

Cite this

Kuivalainen, Pekka ; Lindberg, Klaus. / Hot Electron Transport in Submicron Semiconductor Devices. In: Physica Status Solidi B: Basic Research. 1990 ; Vol. 159, No. 2. pp. 827-835.
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Hot Electron Transport in Submicron Semiconductor Devices. / Kuivalainen, Pekka; Lindberg, Klaus.

In: Physica Status Solidi B: Basic Research, Vol. 159, No. 2, 1990, p. 827-835.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Lindberg, Klaus

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AB - Hot electron transport is studied in small semiconductor structures by solving the coupled Boltzmann and Poisson equations using a simple relaxation time model and the integral formulation of the transport equation. Especially ballistic transport is investigated by calculating the electron distribution function f(x, v) in a submicron n+−n−−n+ diode. In the n−‐region f(x, v) is non‐Maxwellian and the ballistic electrons cause a dominant peak in f(x, v). The validity of the relaxation time approximation (RTA) is studied in the case of a large homogeneous electric field by calculating f(x, v) both, in RTA and using the full scattering rates for polar optical phonon scattering.

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DO - 10.1002/pssb.2221590230

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JO - Physica Status Solidi B: Basic Solid State Physics

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