Hybrid integrated GaSb/Si3N4 narrow linewidth (<50 kHz) distributed Bragg reflector laser

Samu-Pekka Ojanen; Nouman Zia; Jukka Viheriälä; Eero Koivusalo; Joonas Hilska; Ajwaad Quashef; Anders Wallin; Kalle Hanhijärvi; Thomas Fordell; Mircea Guina

doi:10.1063/5.0227303

Hybrid integrated GaSb/Si3N4 narrow linewidth (<50 kHz) distributed Bragg reflector laser

Samu-Pekka Ojanen^*
, Nouman Zia
, Jukka Viheriälä
, Eero Koivusalo
, Joonas Hilska
, Ajwaad Quashef
, Anders Wallin
, Kalle Hanhijärvi
, Thomas Fordell
, Mircea Guina

^*Corresponding author for this work

SU1202 Electrical metrology

Tampere University

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Abstract

A narrow linewidth hybrid integrated distributed Bragg reflector (DBR) laser platform operating at 2 μm wavelength region is demonstrated. The laser architecture comprises AlGaInAsSb/GaSb type-I quantum well reflective semiconductor optical amplifiers butt-coupled to a Si3N4 photonic integrated circuit (PIC), incorporating a narrow-band DBR. The DBR is realized with a long spiral-shaped waveguide structure with periodic circular posts placed adjacent to the waveguide. At room temperature operating conditions, the laser exhibits a maximum continuous wave output power of more than 17 mW for emission near 2 μm. Linewidth properties are analyzed with a heterodyne measurement technique, involving the mixing of the laser signal with a frequency comb phase-locked to an ultra-stable laser. The hybrid laser exhibits a narrow linewidth of ∼8 kHz in 1 ms timescale and ∼50 kHz in 10 ms timescale.

Original language	English
Article number	091106
Journal	Applied Physics Letters
Volume	125
Issue number	9
DOIs	https://doi.org/10.1063/5.0227303
Publication status	Published - 26 Aug 2024
MoE publication type	A1 Journal article-refereed

Funding

This study was supported by EU Business Finland RAPSI (decision 1613/31/2018), EU Business Finland PICAP (decision 44761/31/2020), Academy of Finland (decisions 317204 and 328786), and Academy of Finland flagship program PREIN (decision 320168).

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10.1063/5.0227303

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title = "Hybrid integrated GaSb/Si3N4 narrow linewidth (<50 kHz) distributed Bragg reflector laser",

abstract = "A narrow linewidth hybrid integrated distributed Bragg reflector (DBR) laser platform operating at 2 μm wavelength region is demonstrated. The laser architecture comprises AlGaInAsSb/GaSb type-I quantum well reflective semiconductor optical amplifiers butt-coupled to a Si3N4 photonic integrated circuit (PIC), incorporating a narrow-band DBR. The DBR is realized with a long spiral-shaped waveguide structure with periodic circular posts placed adjacent to the waveguide. At room temperature operating conditions, the laser exhibits a maximum continuous wave output power of more than 17 mW for emission near 2 μm. Linewidth properties are analyzed with a heterodyne measurement technique, involving the mixing of the laser signal with a frequency comb phase-locked to an ultra-stable laser. The hybrid laser exhibits a narrow linewidth of ∼8 kHz in 1 ms timescale and ∼50 kHz in 10 ms timescale.",

author = "Samu-Pekka Ojanen and Nouman Zia and Jukka Viheri{\"a}l{\"a} and Eero Koivusalo and Joonas Hilska and Ajwaad Quashef and Anders Wallin and Kalle Hanhij{\"a}rvi and Thomas Fordell and Mircea Guina",

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doi = "10.1063/5.0227303",

language = "English",

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journal = "Applied Physics Letters",

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T1 - Hybrid integrated GaSb/Si3N4 narrow linewidth (<50 kHz) distributed Bragg reflector laser

AU - Ojanen, Samu-Pekka

AU - Zia, Nouman

AU - Viheriälä, Jukka

AU - Koivusalo, Eero

AU - Hilska, Joonas

AU - Quashef, Ajwaad

AU - Wallin, Anders

AU - Hanhijärvi, Kalle

AU - Fordell, Thomas

AU - Guina, Mircea

PY - 2024/8/26

Y1 - 2024/8/26

N2 - A narrow linewidth hybrid integrated distributed Bragg reflector (DBR) laser platform operating at 2 μm wavelength region is demonstrated. The laser architecture comprises AlGaInAsSb/GaSb type-I quantum well reflective semiconductor optical amplifiers butt-coupled to a Si3N4 photonic integrated circuit (PIC), incorporating a narrow-band DBR. The DBR is realized with a long spiral-shaped waveguide structure with periodic circular posts placed adjacent to the waveguide. At room temperature operating conditions, the laser exhibits a maximum continuous wave output power of more than 17 mW for emission near 2 μm. Linewidth properties are analyzed with a heterodyne measurement technique, involving the mixing of the laser signal with a frequency comb phase-locked to an ultra-stable laser. The hybrid laser exhibits a narrow linewidth of ∼8 kHz in 1 ms timescale and ∼50 kHz in 10 ms timescale.

AB - A narrow linewidth hybrid integrated distributed Bragg reflector (DBR) laser platform operating at 2 μm wavelength region is demonstrated. The laser architecture comprises AlGaInAsSb/GaSb type-I quantum well reflective semiconductor optical amplifiers butt-coupled to a Si3N4 photonic integrated circuit (PIC), incorporating a narrow-band DBR. The DBR is realized with a long spiral-shaped waveguide structure with periodic circular posts placed adjacent to the waveguide. At room temperature operating conditions, the laser exhibits a maximum continuous wave output power of more than 17 mW for emission near 2 μm. Linewidth properties are analyzed with a heterodyne measurement technique, involving the mixing of the laser signal with a frequency comb phase-locked to an ultra-stable laser. The hybrid laser exhibits a narrow linewidth of ∼8 kHz in 1 ms timescale and ∼50 kHz in 10 ms timescale.

UR - https://www.scopus.com/pages/publications/85202451217

U2 - 10.1063/5.0227303

DO - 10.1063/5.0227303

M3 - Article

SN - 0003-6951

VL - 125

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 091106

ER -

Hybrid integrated GaSb/Si3N4 narrow linewidth (<50 kHz) distributed Bragg reflector laser

Abstract

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