Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding

Mikko Harjanne, Markku Kapulainen, Sami Ylinen, Timo Aalto, Jyrki Ollila, Ludwig Mörl, Wolfgang Passenberg

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

Abstract

In this paper we present the integration of an InP-based photodetector with silicon-on-insulator (SOI) waveguides using thermocompression bonding. A BCB prism integrated on top of the light-sensitive area of a planar detector (PD) chip deflects the light from a 4 μm thick SOI waveguide upward into the flip-chip bonded PD. A trench is etched in front of the SOI waveguide to accommodate prisms with apexes up to 7 μm. Using thermocompression bonding between thin gold pads (~500 nm thickness) deposited on both, SOI and photodetector chips an excellent vertical alignment accuracy of ±100 nm can be achieved, limited only by etching and Au-deposition tolerances. A commercial flip-chip bonder provides a lateral alignment accuracy also in the sub-micron range. Together with a previously developed process for integrating lasers and SOA chips using the same technology, fully functional PICs can now be realized on the SOI platform using thermocompression bonding.
Original languageEnglish
Title of host publicationSilicon Photonics and Photonic Integrated Circuits II
EditorsGiancarlo Cesare Righini
PublisherInternational Society for Optics and Photonics SPIE
ISBN (Print)978-0-8194-8192-4
DOIs
Publication statusPublished - 2010
MoE publication typeA4 Article in a conference publication
EventSilicon Photonics and Photonic Integrated Circuits II - Brussels, Belgium
Duration: 12 Apr 201016 Apr 2010

Publication series

SeriesProceedings of SPIE
Volume7719
ISSN0277-786X

Conference

ConferenceSilicon Photonics and Photonic Integrated Circuits II
CountryBelgium
CityBrussels
Period12/04/1016/04/10

Fingerprint

photometers
chips
insulators
waveguides
silicon
prisms
alignment
detectors
apexes
platforms
etching
gold
lasers

Keywords

  • flip-chip
  • InP
  • integrated optics
  • photodetector
  • silicon-on-insulator
  • SOI
  • thermocompression bonding

Cite this

Harjanne, M., Kapulainen, M., Ylinen, S., Aalto, T., Ollila, J., Mörl, L., & Passenberg, W. (2010). Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding. In G. C. Righini (Ed.), Silicon Photonics and Photonic Integrated Circuits II [77190S] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 7719 https://doi.org/10.1117/12.854403
Harjanne, Mikko ; Kapulainen, Markku ; Ylinen, Sami ; Aalto, Timo ; Ollila, Jyrki ; Mörl, Ludwig ; Passenberg, Wolfgang. / Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding. Silicon Photonics and Photonic Integrated Circuits II. editor / Giancarlo Cesare Righini. International Society for Optics and Photonics SPIE, 2010. (Proceedings of SPIE, Vol. 7719).
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title = "Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding",
abstract = "In this paper we present the integration of an InP-based photodetector with silicon-on-insulator (SOI) waveguides using thermocompression bonding. A BCB prism integrated on top of the light-sensitive area of a planar detector (PD) chip deflects the light from a 4 μm thick SOI waveguide upward into the flip-chip bonded PD. A trench is etched in front of the SOI waveguide to accommodate prisms with apexes up to 7 μm. Using thermocompression bonding between thin gold pads (~500 nm thickness) deposited on both, SOI and photodetector chips an excellent vertical alignment accuracy of ±100 nm can be achieved, limited only by etching and Au-deposition tolerances. A commercial flip-chip bonder provides a lateral alignment accuracy also in the sub-micron range. Together with a previously developed process for integrating lasers and SOA chips using the same technology, fully functional PICs can now be realized on the SOI platform using thermocompression bonding.",
keywords = "flip-chip, InP, integrated optics, photodetector, silicon-on-insulator, SOI, thermocompression bonding",
author = "Mikko Harjanne and Markku Kapulainen and Sami Ylinen and Timo Aalto and Jyrki Ollila and Ludwig M{\"o}rl and Wolfgang Passenberg",
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Harjanne, M, Kapulainen, M, Ylinen, S, Aalto, T, Ollila, J, Mörl, L & Passenberg, W 2010, Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding. in GC Righini (ed.), Silicon Photonics and Photonic Integrated Circuits II., 77190S, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 7719, Silicon Photonics and Photonic Integrated Circuits II, Brussels, Belgium, 12/04/10. https://doi.org/10.1117/12.854403

Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding. / Harjanne, Mikko; Kapulainen, Markku; Ylinen, Sami; Aalto, Timo; Ollila, Jyrki; Mörl, Ludwig; Passenberg, Wolfgang.

Silicon Photonics and Photonic Integrated Circuits II. ed. / Giancarlo Cesare Righini. International Society for Optics and Photonics SPIE, 2010. 77190S (Proceedings of SPIE, Vol. 7719).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AU - Harjanne, Mikko

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AU - Aalto, Timo

AU - Ollila, Jyrki

AU - Mörl, Ludwig

AU - Passenberg, Wolfgang

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AB - In this paper we present the integration of an InP-based photodetector with silicon-on-insulator (SOI) waveguides using thermocompression bonding. A BCB prism integrated on top of the light-sensitive area of a planar detector (PD) chip deflects the light from a 4 μm thick SOI waveguide upward into the flip-chip bonded PD. A trench is etched in front of the SOI waveguide to accommodate prisms with apexes up to 7 μm. Using thermocompression bonding between thin gold pads (~500 nm thickness) deposited on both, SOI and photodetector chips an excellent vertical alignment accuracy of ±100 nm can be achieved, limited only by etching and Au-deposition tolerances. A commercial flip-chip bonder provides a lateral alignment accuracy also in the sub-micron range. Together with a previously developed process for integrating lasers and SOA chips using the same technology, fully functional PICs can now be realized on the SOI platform using thermocompression bonding.

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KW - integrated optics

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M3 - Conference article in proceedings

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A2 - Righini, Giancarlo Cesare

PB - International Society for Optics and Photonics SPIE

ER -

Harjanne M, Kapulainen M, Ylinen S, Aalto T, Ollila J, Mörl L et al. Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding. In Righini GC, editor, Silicon Photonics and Photonic Integrated Circuits II. International Society for Optics and Photonics SPIE. 2010. 77190S. (Proceedings of SPIE, Vol. 7719). https://doi.org/10.1117/12.854403