In this paper we present the integration of an InP-based photodetector with silicon-on-insulator (SOI) waveguides using thermocompression bonding. A BCB prism integrated on top of the light-sensitive area of a planar detector (PD) chip deflects the light from a 4 μm thick SOI waveguide upward into the flip-chip bonded PD. A trench is etched in front of the SOI waveguide to accommodate prisms with apexes up to 7 μm. Using thermocompression bonding between thin gold pads (~500 nm thickness) deposited on both, SOI and photodetector chips an excellent vertical alignment accuracy of ±100 nm can be achieved, limited only by etching and Au-deposition tolerances. A commercial flip-chip bonder provides a lateral alignment accuracy also in the sub-micron range. Together with a previously developed process for integrating lasers and SOA chips using the same technology, fully functional PICs can now be realized on the SOI platform using thermocompression bonding.
|Series||Proceedings of SPIE|
|Conference||Silicon Photonics and Photonic Integrated Circuits II|
|Period||12/04/10 → 16/04/10|
- integrated optics
- thermocompression bonding