Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding

Mikko Harjanne, Markku Kapulainen, Sami Ylinen, Timo Aalto, Jyrki Ollila, Ludwig Mörl, Wolfgang Passenberg

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    In this paper we present the integration of an InP-based photodetector with silicon-on-insulator (SOI) waveguides using thermocompression bonding. A BCB prism integrated on top of the light-sensitive area of a planar detector (PD) chip deflects the light from a 4 μm thick SOI waveguide upward into the flip-chip bonded PD. A trench is etched in front of the SOI waveguide to accommodate prisms with apexes up to 7 μm. Using thermocompression bonding between thin gold pads (~500 nm thickness) deposited on both, SOI and photodetector chips an excellent vertical alignment accuracy of ±100 nm can be achieved, limited only by etching and Au-deposition tolerances. A commercial flip-chip bonder provides a lateral alignment accuracy also in the sub-micron range. Together with a previously developed process for integrating lasers and SOA chips using the same technology, fully functional PICs can now be realized on the SOI platform using thermocompression bonding.
    Original languageEnglish
    Title of host publicationSilicon Photonics and Photonic Integrated Circuits II
    EditorsGiancarlo Cesare Righini
    PublisherInternational Society for Optics and Photonics SPIE
    ISBN (Print)978-0-8194-8192-4
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA4 Article in a conference publication
    EventSilicon Photonics and Photonic Integrated Circuits II - Brussels, Belgium
    Duration: 12 Apr 201016 Apr 2010

    Publication series

    SeriesProceedings of SPIE
    Volume7719
    ISSN0277-786X

    Conference

    ConferenceSilicon Photonics and Photonic Integrated Circuits II
    CountryBelgium
    CityBrussels
    Period12/04/1016/04/10

    Keywords

    • flip-chip
    • InP
    • integrated optics
    • photodetector
    • silicon-on-insulator
    • SOI
    • thermocompression bonding

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