Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding

Mikko Harjanne, Markku Kapulainen, Sami Ylinen, Timo Aalto, Jyrki Ollila, Ludwig Mörl, Wolfgang Passenberg

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    In this paper we present the integration of an InP-based photodetector with silicon-on-insulator (SOI) waveguides using thermocompression bonding. A BCB prism integrated on top of the light-sensitive area of a planar detector (PD) chip deflects the light from a 4 μm thick SOI waveguide upward into the flip-chip bonded PD. A trench is etched in front of the SOI waveguide to accommodate prisms with apexes up to 7 μm. Using thermocompression bonding between thin gold pads (~500 nm thickness) deposited on both, SOI and photodetector chips an excellent vertical alignment accuracy of ±100 nm can be achieved, limited only by etching and Au-deposition tolerances. A commercial flip-chip bonder provides a lateral alignment accuracy also in the sub-micron range. Together with a previously developed process for integrating lasers and SOA chips using the same technology, fully functional PICs can now be realized on the SOI platform using thermocompression bonding.
    Original languageEnglish
    Title of host publicationSilicon Photonics and Photonic Integrated Circuits II
    EditorsGiancarlo Cesare Righini
    PublisherInternational Society for Optics and Photonics SPIE
    ISBN (Print)978-0-8194-8192-4
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA4 Article in a conference publication
    EventSilicon Photonics and Photonic Integrated Circuits II - Brussels, Belgium
    Duration: 12 Apr 201016 Apr 2010

    Publication series

    SeriesProceedings of SPIE
    Volume7719
    ISSN0277-786X

    Conference

    ConferenceSilicon Photonics and Photonic Integrated Circuits II
    CountryBelgium
    CityBrussels
    Period12/04/1016/04/10

    Fingerprint

    photometers
    chips
    insulators
    waveguides
    silicon
    prisms
    alignment
    detectors
    apexes
    platforms
    etching
    gold
    lasers

    Keywords

    • flip-chip
    • InP
    • integrated optics
    • photodetector
    • silicon-on-insulator
    • SOI
    • thermocompression bonding

    Cite this

    Harjanne, M., Kapulainen, M., Ylinen, S., Aalto, T., Ollila, J., Mörl, L., & Passenberg, W. (2010). Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding. In G. C. Righini (Ed.), Silicon Photonics and Photonic Integrated Circuits II [77190S] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 7719 https://doi.org/10.1117/12.854403
    Harjanne, Mikko ; Kapulainen, Markku ; Ylinen, Sami ; Aalto, Timo ; Ollila, Jyrki ; Mörl, Ludwig ; Passenberg, Wolfgang. / Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding. Silicon Photonics and Photonic Integrated Circuits II. editor / Giancarlo Cesare Righini. International Society for Optics and Photonics SPIE, 2010. (Proceedings of SPIE, Vol. 7719).
    @inproceedings{2e1acc72c1fa49158451b5e1630bfb19,
    title = "Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding",
    abstract = "In this paper we present the integration of an InP-based photodetector with silicon-on-insulator (SOI) waveguides using thermocompression bonding. A BCB prism integrated on top of the light-sensitive area of a planar detector (PD) chip deflects the light from a 4 μm thick SOI waveguide upward into the flip-chip bonded PD. A trench is etched in front of the SOI waveguide to accommodate prisms with apexes up to 7 μm. Using thermocompression bonding between thin gold pads (~500 nm thickness) deposited on both, SOI and photodetector chips an excellent vertical alignment accuracy of ±100 nm can be achieved, limited only by etching and Au-deposition tolerances. A commercial flip-chip bonder provides a lateral alignment accuracy also in the sub-micron range. Together with a previously developed process for integrating lasers and SOA chips using the same technology, fully functional PICs can now be realized on the SOI platform using thermocompression bonding.",
    keywords = "flip-chip, InP, integrated optics, photodetector, silicon-on-insulator, SOI, thermocompression bonding",
    author = "Mikko Harjanne and Markku Kapulainen and Sami Ylinen and Timo Aalto and Jyrki Ollila and Ludwig M{\"o}rl and Wolfgang Passenberg",
    note = "CO:U Fraunhofer-Institut f{\"u}r Nachrichtentechnik, Heinrich-Hertz-Institut, Germany CA2: TK610",
    year = "2010",
    doi = "10.1117/12.854403",
    language = "English",
    isbn = "978-0-8194-8192-4",
    series = "Proceedings of SPIE",
    publisher = "International Society for Optics and Photonics SPIE",
    editor = "Righini, {Giancarlo Cesare}",
    booktitle = "Silicon Photonics and Photonic Integrated Circuits II",
    address = "United States",

    }

    Harjanne, M, Kapulainen, M, Ylinen, S, Aalto, T, Ollila, J, Mörl, L & Passenberg, W 2010, Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding. in GC Righini (ed.), Silicon Photonics and Photonic Integrated Circuits II., 77190S, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 7719, Silicon Photonics and Photonic Integrated Circuits II, Brussels, Belgium, 12/04/10. https://doi.org/10.1117/12.854403

    Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding. / Harjanne, Mikko; Kapulainen, Markku; Ylinen, Sami; Aalto, Timo; Ollila, Jyrki; Mörl, Ludwig; Passenberg, Wolfgang.

    Silicon Photonics and Photonic Integrated Circuits II. ed. / Giancarlo Cesare Righini. International Society for Optics and Photonics SPIE, 2010. 77190S (Proceedings of SPIE, Vol. 7719).

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    T1 - Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding

    AU - Harjanne, Mikko

    AU - Kapulainen, Markku

    AU - Ylinen, Sami

    AU - Aalto, Timo

    AU - Ollila, Jyrki

    AU - Mörl, Ludwig

    AU - Passenberg, Wolfgang

    N1 - CO:U Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut, Germany CA2: TK610

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    N2 - In this paper we present the integration of an InP-based photodetector with silicon-on-insulator (SOI) waveguides using thermocompression bonding. A BCB prism integrated on top of the light-sensitive area of a planar detector (PD) chip deflects the light from a 4 μm thick SOI waveguide upward into the flip-chip bonded PD. A trench is etched in front of the SOI waveguide to accommodate prisms with apexes up to 7 μm. Using thermocompression bonding between thin gold pads (~500 nm thickness) deposited on both, SOI and photodetector chips an excellent vertical alignment accuracy of ±100 nm can be achieved, limited only by etching and Au-deposition tolerances. A commercial flip-chip bonder provides a lateral alignment accuracy also in the sub-micron range. Together with a previously developed process for integrating lasers and SOA chips using the same technology, fully functional PICs can now be realized on the SOI platform using thermocompression bonding.

    AB - In this paper we present the integration of an InP-based photodetector with silicon-on-insulator (SOI) waveguides using thermocompression bonding. A BCB prism integrated on top of the light-sensitive area of a planar detector (PD) chip deflects the light from a 4 μm thick SOI waveguide upward into the flip-chip bonded PD. A trench is etched in front of the SOI waveguide to accommodate prisms with apexes up to 7 μm. Using thermocompression bonding between thin gold pads (~500 nm thickness) deposited on both, SOI and photodetector chips an excellent vertical alignment accuracy of ±100 nm can be achieved, limited only by etching and Au-deposition tolerances. A commercial flip-chip bonder provides a lateral alignment accuracy also in the sub-micron range. Together with a previously developed process for integrating lasers and SOA chips using the same technology, fully functional PICs can now be realized on the SOI platform using thermocompression bonding.

    KW - flip-chip

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    KW - integrated optics

    KW - photodetector

    KW - silicon-on-insulator

    KW - SOI

    KW - thermocompression bonding

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    DO - 10.1117/12.854403

    M3 - Conference article in proceedings

    SN - 978-0-8194-8192-4

    T3 - Proceedings of SPIE

    BT - Silicon Photonics and Photonic Integrated Circuits II

    A2 - Righini, Giancarlo Cesare

    PB - International Society for Optics and Photonics SPIE

    ER -

    Harjanne M, Kapulainen M, Ylinen S, Aalto T, Ollila J, Mörl L et al. Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding. In Righini GC, editor, Silicon Photonics and Photonic Integrated Circuits II. International Society for Optics and Photonics SPIE. 2010. 77190S. (Proceedings of SPIE, Vol. 7719). https://doi.org/10.1117/12.854403