The technology of spintronics, where, in addition to the electronic charge, electron spin also carries information, promises the future generation of electronics combining standard microelectronics with spin‐dependent effects that arise from the interaction between spin of the carriers and the externally applied magnetic fields. Since the discovery of giant magnetoresistance effect in 1988, the field of spintronics emerged rapidly as an extremely important branch of condensed matter physics. Intensive research efforts in the field of spintronics led to the conclusion that material engineering at nanoscale and especially at the heterointerfaces holds the key for the future of electronic components. In the field of hybrid inorganic–organic spintronics, we are at a very interesting stage where rapid development is expected toward the single molecular and two‐dimensional spintronic components with the newly emerging ideas of spin‐polarized interfaces and spin crossover materials. To achieve this goal, material scientists still need to overcome major challenges like yield, reproducibility, sizable room temperature operations, and so on. Some promising new ideas pointed toward utilization of the optical or electrical control of spin flipping of charge carriers in spintronic components. This chapter thoroughly discussed these major issues in the field of hybrid spintronics and spin switching molecules and the research direction that will enable energy‐efficient, versatile spintronic components for future memory and logic operations.
|Title of host publication||Hybrid Organic‐Inorganic Interfaces|
|Subtitle of host publication||Towards Advanced Functional Materials|
|Editors||Marie-Helene Delville, Andreas Taubert|
|Publication status||Published - 2017|
|MoE publication type||A3 Part of a book or another research book|