Hydride vapour phase epitaxy for nanostructures

Rodriguez Messmer (Corresponding Author), S. Lourdudoss, Jouni Ahopelto, Harri Lipsanen, J.-O. Wesström, K. Hieke, J. Reithmaier, K. Kerkel, A. Forchel, W. Seifert, N. Carlsson, L. Samuelson

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).
Original languageEnglish
Pages (from-to)238-241
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume51
Issue number1-3
DOIs
Publication statusPublished - 1998
MoE publication typeA1 Journal article-refereed

Fingerprint

Vapor phase epitaxy
Hydrides
vapor phase epitaxy
hydrides
Nanostructures
wire
Wire
Focused ion beams
flexibility
templates
ion beams
Ions
Fabrication
fabrication
Substrates
ions
gallium arsenide

Cite this

Messmer, Rodriguez ; Lourdudoss, S. ; Ahopelto, Jouni ; Lipsanen, Harri ; Wesström, J.-O. ; Hieke, K. ; Reithmaier, J. ; Kerkel, K. ; Forchel, A. ; Seifert, W. ; Carlsson, N. ; Samuelson, L. / Hydride vapour phase epitaxy for nanostructures. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 1998 ; Vol. 51, No. 1-3. pp. 238-241.
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title = "Hydride vapour phase epitaxy for nanostructures",
abstract = "The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).",
author = "Rodriguez Messmer and S. Lourdudoss and Jouni Ahopelto and Harri Lipsanen and J.-O. Wesstr{\"o}m and K. Hieke and J. Reithmaier and K. Kerkel and A. Forchel and W. Seifert and N. Carlsson and L. Samuelson",
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language = "English",
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journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
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Messmer, R, Lourdudoss, S, Ahopelto, J, Lipsanen, H, Wesström, J-O, Hieke, K, Reithmaier, J, Kerkel, K, Forchel, A, Seifert, W, Carlsson, N & Samuelson, L 1998, 'Hydride vapour phase epitaxy for nanostructures', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 51, no. 1-3, pp. 238-241. https://doi.org/10.1016/S0921-5107(97)00268-7

Hydride vapour phase epitaxy for nanostructures. / Messmer, Rodriguez (Corresponding Author); Lourdudoss, S.; Ahopelto, Jouni; Lipsanen, Harri; Wesström, J.-O.; Hieke, K.; Reithmaier, J.; Kerkel, K.; Forchel, A.; Seifert, W.; Carlsson, N.; Samuelson, L.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 51, No. 1-3, 1998, p. 238-241.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Hydride vapour phase epitaxy for nanostructures

AU - Messmer, Rodriguez

AU - Lourdudoss, S.

AU - Ahopelto, Jouni

AU - Lipsanen, Harri

AU - Wesström, J.-O.

AU - Hieke, K.

AU - Reithmaier, J.

AU - Kerkel, K.

AU - Forchel, A.

AU - Seifert, W.

AU - Carlsson, N.

AU - Samuelson, L.

PY - 1998

Y1 - 1998

N2 - The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).

AB - The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).

U2 - 10.1016/S0921-5107(97)00268-7

DO - 10.1016/S0921-5107(97)00268-7

M3 - Article

VL - 51

SP - 238

EP - 241

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -