TY - JOUR
T1 - Hydride vapour phase epitaxy for nanostructures
AU - Messmer, Rodriguez
AU - Lourdudoss, S.
AU - Ahopelto, Jouni
AU - Lipsanen, Harri
AU - Wesström, J.-O.
AU - Hieke, K.
AU - Reithmaier, J.
AU - Kerkel, K.
AU - Forchel, A.
AU - Seifert, W.
AU - Carlsson, N.
AU - Samuelson, L.
N1 - "The 104 papers in this volume of Microelectronics Engineering represent about 55% of the total conference presentations, showing an increase in number of papers in the proceedings for last LDSDconference in Singapore (about 100 papers in total). The rest of the papers (57 oral papers) will be published in a special issue of Materials Science and Engineering B: Solid State Materials for Advanced Technology."
PY - 1998
Y1 - 1998
N2 - The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).
AB - The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).
U2 - 10.1016/S0921-5107(97)00268-7
DO - 10.1016/S0921-5107(97)00268-7
M3 - Article
SN - 0921-5107
VL - 51
SP - 238
EP - 241
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1-3
T2 - 2nd International Conference on Low Dimensional Structures and Devices, LDSD'97
Y2 - 19 May 1997 through 21 May 1997
ER -