Hydride vapour phase epitaxy for nanostructures

Rodriguez Messmer (Corresponding Author), S. Lourdudoss, Jouni Ahopelto, Harri Lipsanen, J.-O. Wesström, K. Hieke, J. Reithmaier, K. Kerkel, A. Forchel, W. Seifert, N. Carlsson, L. Samuelson

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)

    Abstract

    The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).
    Original languageEnglish
    Pages (from-to)238-241
    JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
    Volume51
    Issue number1-3
    DOIs
    Publication statusPublished - 1998
    MoE publication typeA1 Journal article-refereed
    Event2nd International Conference on Low Dimensional Structures and Devices, LDSD'97 - Lisbon, Portugal
    Duration: 19 May 199721 May 1997

    Fingerprint

    Vapor phase epitaxy
    Hydrides
    vapor phase epitaxy
    hydrides
    Nanostructures
    wire
    Wire
    Focused ion beams
    flexibility
    templates
    ion beams
    Ions
    Fabrication
    fabrication
    Substrates
    ions
    gallium arsenide

    Cite this

    Messmer, Rodriguez ; Lourdudoss, S. ; Ahopelto, Jouni ; Lipsanen, Harri ; Wesström, J.-O. ; Hieke, K. ; Reithmaier, J. ; Kerkel, K. ; Forchel, A. ; Seifert, W. ; Carlsson, N. ; Samuelson, L. / Hydride vapour phase epitaxy for nanostructures. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 1998 ; Vol. 51, No. 1-3. pp. 238-241.
    @article{7bbb7a36276544d597b9d4bcddf24d7d,
    title = "Hydride vapour phase epitaxy for nanostructures",
    abstract = "The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).",
    author = "Rodriguez Messmer and S. Lourdudoss and Jouni Ahopelto and Harri Lipsanen and J.-O. Wesstr{\"o}m and K. Hieke and J. Reithmaier and K. Kerkel and A. Forchel and W. Seifert and N. Carlsson and L. Samuelson",
    note = "{"}The 104 papers in this volume of Microelectronics Engineering represent about 55{\%} of the total conference presentations, showing an increase in number of papers in the proceedings for last LDSDconference in Singapore (about 100 papers in total). The rest of the papers (57 oral papers) will be published in a special issue of Materials Science and Engineering B: Solid State Materials for Advanced Technology.{"}",
    year = "1998",
    doi = "10.1016/S0921-5107(97)00268-7",
    language = "English",
    volume = "51",
    pages = "238--241",
    journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
    issn = "0921-5107",
    publisher = "Elsevier",
    number = "1-3",

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    Messmer, R, Lourdudoss, S, Ahopelto, J, Lipsanen, H, Wesström, J-O, Hieke, K, Reithmaier, J, Kerkel, K, Forchel, A, Seifert, W, Carlsson, N & Samuelson, L 1998, 'Hydride vapour phase epitaxy for nanostructures', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 51, no. 1-3, pp. 238-241. https://doi.org/10.1016/S0921-5107(97)00268-7

    Hydride vapour phase epitaxy for nanostructures. / Messmer, Rodriguez (Corresponding Author); Lourdudoss, S.; Ahopelto, Jouni; Lipsanen, Harri; Wesström, J.-O.; Hieke, K.; Reithmaier, J.; Kerkel, K.; Forchel, A.; Seifert, W.; Carlsson, N.; Samuelson, L.

    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 51, No. 1-3, 1998, p. 238-241.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Hydride vapour phase epitaxy for nanostructures

    AU - Messmer, Rodriguez

    AU - Lourdudoss, S.

    AU - Ahopelto, Jouni

    AU - Lipsanen, Harri

    AU - Wesström, J.-O.

    AU - Hieke, K.

    AU - Reithmaier, J.

    AU - Kerkel, K.

    AU - Forchel, A.

    AU - Seifert, W.

    AU - Carlsson, N.

    AU - Samuelson, L.

    N1 - "The 104 papers in this volume of Microelectronics Engineering represent about 55% of the total conference presentations, showing an increase in number of papers in the proceedings for last LDSDconference in Singapore (about 100 papers in total). The rest of the papers (57 oral papers) will be published in a special issue of Materials Science and Engineering B: Solid State Materials for Advanced Technology."

    PY - 1998

    Y1 - 1998

    N2 - The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).

    AB - The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).

    U2 - 10.1016/S0921-5107(97)00268-7

    DO - 10.1016/S0921-5107(97)00268-7

    M3 - Article

    VL - 51

    SP - 238

    EP - 241

    JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

    JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

    SN - 0921-5107

    IS - 1-3

    ER -