Hydride vapour phase epitaxy for nanostructures

Rodriguez Messmer (Corresponding Author), S. Lourdudoss, Jouni Ahopelto, Harri Lipsanen, J.-O. Wesström, K. Hieke, J. Reithmaier, K. Kerkel, A. Forchel, W. Seifert, N. Carlsson, L. Samuelson

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    Abstract

    The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).
    Original languageEnglish
    Pages (from-to)238-241
    JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
    Volume51
    Issue number1-3
    DOIs
    Publication statusPublished - 1998
    MoE publication typeA1 Journal article-refereed
    Event2nd International Conference on Low Dimensional Structures and Devices, LDSD'97 - Lisbon, Portugal
    Duration: 19 May 199721 May 1997

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  • Cite this

    Messmer, R., Lourdudoss, S., Ahopelto, J., Lipsanen, H., Wesström, J-O., Hieke, K., Reithmaier, J., Kerkel, K., Forchel, A., Seifert, W., Carlsson, N., & Samuelson, L. (1998). Hydride vapour phase epitaxy for nanostructures. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 51(1-3), 238-241. https://doi.org/10.1016/S0921-5107(97)00268-7