Hydride vapour phase epitaxy for nanostructures

E. Rodríguez Messmer; S. Lourdudoss; Jouni Ahopelto; Harri Lipsanen; K. Hieke; J.-O. Wesström; J. Reithmaier; K. Kerkel; A. Forchel; W. Seifert; N. Carlsson; L. Samuelson

doi:10.1016/S0921-5107(97)00268-7

Hydride vapour phase epitaxy for nanostructures

E. Rodríguez Messmer^*
, S. Lourdudoss
, Jouni Ahopelto
, Harri Lipsanen
, K. Hieke
, J.-O. Wesström
, J. Reithmaier
, K. Kerkel
, A. Forchel
, W. Seifert
, N. Carlsson
, L. Samuelson

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Abstract

The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).

Original language	English
Pages (from-to)	238-241
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	51
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(97)00268-7
Publication status	Published - 1998
MoE publication type	A1 Journal article-refereed
Event	2nd International Conference on Low Dimensional Structures and Devices, LDSD'97 - Lisbon, Portugal Duration: 19 May 1997 → 21 May 1997

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Messmer, E. R., Lourdudoss, S., Ahopelto, J., Lipsanen, H., Hieke, K., Wesström, J.-O., Reithmaier, J., Kerkel, K., Forchel, A., Seifert, W., Carlsson, N., & Samuelson, L. (1998). Hydride vapour phase epitaxy for nanostructures. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 51(1-3), 238-241. https://doi.org/10.1016/S0921-5107(97)00268-7

@article{7bbb7a36276544d597b9d4bcddf24d7d,

title = "Hydride vapour phase epitaxy for nanostructures",

abstract = "The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).",

author = "Messmer, \{E. Rodr{\'i}guez\} and S. Lourdudoss and Jouni Ahopelto and Harri Lipsanen and K. Hieke and J.-O. Wesstr{\"o}m and J. Reithmaier and K. Kerkel and A. Forchel and W. Seifert and N. Carlsson and L. Samuelson",

note = "{"}The 104 papers in this volume of Microelectronics Engineering represent about 55\% of the total conference presentations, showing an increase in number of papers in the proceedings for last LDSDconference in Singapore (about 100 papers in total). The rest of the papers (57 oral papers) will be published in a special issue of Materials Science and Engineering B: Solid State Materials for Advanced Technology.{"}; 2nd International Conference on Low Dimensional Structures and Devices, LDSD'97 ; Conference date: 19-05-1997 Through 21-05-1997",

year = "1998",

doi = "10.1016/S0921-5107(97)00268-7",

language = "English",

volume = "51",

pages = "238--241",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier",

number = "1-3",

}

Messmer, ER, Lourdudoss, S, Ahopelto, J, Lipsanen, H, Hieke, K, Wesström, J-O, Reithmaier, J, Kerkel, K, Forchel, A, Seifert, W, Carlsson, N & Samuelson, L 1998, 'Hydride vapour phase epitaxy for nanostructures', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 51, no. 1-3, pp. 238-241. https://doi.org/10.1016/S0921-5107(97)00268-7

TY - JOUR

T1 - Hydride vapour phase epitaxy for nanostructures

AU - Messmer, E. Rodríguez

AU - Lourdudoss, S.

AU - Ahopelto, Jouni

AU - Lipsanen, Harri

AU - Hieke, K.

AU - Wesström, J.-O.

AU - Reithmaier, J.

AU - Kerkel, K.

AU - Forchel, A.

AU - Seifert, W.

AU - Carlsson, N.

AU - Samuelson, L.

N1 - "The 104 papers in this volume of Microelectronics Engineering represent about 55% of the total conference presentations, showing an increase in number of papers in the proceedings for last LDSDconference in Singapore (about 100 papers in total). The rest of the papers (57 oral papers) will be published in a special issue of Materials Science and Engineering B: Solid State Materials for Advanced Technology."

PY - 1998

Y1 - 1998

N2 - The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).

AB - The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).

U2 - 10.1016/S0921-5107(97)00268-7

DO - 10.1016/S0921-5107(97)00268-7

M3 - Article

SN - 0921-5107

VL - 51

SP - 238

EP - 241

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

T2 - 2nd International Conference on Low Dimensional Structures and Devices, LDSD'97

Y2 - 19 May 1997 through 21 May 1997

ER -

Hydride vapour phase epitaxy for nanostructures

Abstract

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