Hysteretic magnetoresistance in polymeric diodes

Sayani Majumdar, Himadri S. Majumdar, Harri Aarnio, Ronald Osterbacka

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16 Citations (Scopus)

Abstract

We report on hysteretic organic magnetoresistance (OMAR) in polymeric diodes. We found that magnitude and lineshape of OMAR depend strongly on the scan speed of the magnetic field and on the time delay between two successive measurements. The time‐dependent OMAR phenomenon is universal for diodes made with various polymers. However, the width and magnitude of OMAR varied with the polymeric material. The suggestive reason for this hysteretic behavior is trapped carriers, which in presence of a magnetic field change the ferromagnetic ground‐state of the polymer leading to a long spin relaxation time. These experimental observations are significant for clarification of the OMAR phenomenon.
Original languageEnglish
Pages (from-to)242-244
JournalPhysica Status Solidi: Rapid Research Letters
Volume3
Issue number7-8
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

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