Hysteretic magnetoresistance in polymeric diodes

Sayani Majumdar; Himadri S. Majumdar; Harri Aarnio; Ronald Osterbacka

doi:10.1002/pssr.200903193

Hysteretic magnetoresistance in polymeric diodes

Sayani Majumdar, Himadri S. Majumdar, Harri Aarnio, Ronald Osterbacka

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16 Citations (Scopus)

Abstract

We report on hysteretic organic magnetoresistance (OMAR) in polymeric diodes. We found that magnitude and lineshape of OMAR depend strongly on the scan speed of the magnetic field and on the time delay between two successive measurements. The time‐dependent OMAR phenomenon is universal for diodes made with various polymers. However, the width and magnitude of OMAR varied with the polymeric material. The suggestive reason for this hysteretic behavior is trapped carriers, which in presence of a magnetic field change the ferromagnetic ground‐state of the polymer leading to a long spin relaxation time. These experimental observations are significant for clarification of the OMAR phenomenon.

Original language	English
Pages (from-to)	242-244
Journal	Physica Status Solidi: Rapid Research Letters
Volume	3
Issue number	7-8
DOIs	https://doi.org/10.1002/pssr.200903193
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

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@article{83f82b5e326643d0a3415487e28a4174,

title = "Hysteretic magnetoresistance in polymeric diodes",

abstract = "We report on hysteretic organic magnetoresistance (OMAR) in polymeric diodes. We found that magnitude and lineshape of OMAR depend strongly on the scan speed of the magnetic field and on the time delay between two successive measurements. The time‐dependent OMAR phenomenon is universal for diodes made with various polymers. However, the width and magnitude of OMAR varied with the polymeric material. The suggestive reason for this hysteretic behavior is trapped carriers, which in presence of a magnetic field change the ferromagnetic ground‐state of the polymer leading to a long spin relaxation time. These experimental observations are significant for clarification of the OMAR phenomenon.",

author = "Sayani Majumdar and Majumdar, {Himadri S.} and Harri Aarnio and Ronald Osterbacka",

year = "2009",

doi = "10.1002/pssr.200903193",

language = "English",

volume = "3",

pages = "242--244",

journal = "Physica Status Solidi: Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley",

number = "7-8",

}

TY - JOUR

T1 - Hysteretic magnetoresistance in polymeric diodes

AU - Majumdar, Sayani

AU - Majumdar, Himadri S.

AU - Aarnio, Harri

AU - Osterbacka, Ronald

PY - 2009

Y1 - 2009

N2 - We report on hysteretic organic magnetoresistance (OMAR) in polymeric diodes. We found that magnitude and lineshape of OMAR depend strongly on the scan speed of the magnetic field and on the time delay between two successive measurements. The time‐dependent OMAR phenomenon is universal for diodes made with various polymers. However, the width and magnitude of OMAR varied with the polymeric material. The suggestive reason for this hysteretic behavior is trapped carriers, which in presence of a magnetic field change the ferromagnetic ground‐state of the polymer leading to a long spin relaxation time. These experimental observations are significant for clarification of the OMAR phenomenon.

AB - We report on hysteretic organic magnetoresistance (OMAR) in polymeric diodes. We found that magnitude and lineshape of OMAR depend strongly on the scan speed of the magnetic field and on the time delay between two successive measurements. The time‐dependent OMAR phenomenon is universal for diodes made with various polymers. However, the width and magnitude of OMAR varied with the polymeric material. The suggestive reason for this hysteretic behavior is trapped carriers, which in presence of a magnetic field change the ferromagnetic ground‐state of the polymer leading to a long spin relaxation time. These experimental observations are significant for clarification of the OMAR phenomenon.

U2 - 10.1002/pssr.200903193

DO - 10.1002/pssr.200903193

M3 - Article

VL - 3

SP - 242

EP - 244

JO - Physica Status Solidi: Rapid Research Letters

JF - Physica Status Solidi: Rapid Research Letters

SN - 1862-6254

IS - 7-8

ER -