Abstract
We report on hysteretic organic magnetoresistance (OMAR) in polymeric diodes. We found that magnitude and lineshape of OMAR depend strongly on the scan speed of the magnetic field and on the time delay between two successive measurements. The time‐dependent OMAR phenomenon is universal for diodes made with various polymers. However, the width and magnitude of OMAR varied with the polymeric material. The suggestive reason for this hysteretic behavior is trapped carriers, which in presence of a magnetic field change the ferromagnetic ground‐state of the polymer leading to a long spin relaxation time. These experimental observations are significant for clarification of the OMAR phenomenon.
| Original language | English |
|---|---|
| Pages (from-to) | 242-244 |
| Journal | Physica Status Solidi: Rapid Research Letters |
| Volume | 3 |
| Issue number | 7-8 |
| DOIs | |
| Publication status | Published - 2009 |
| MoE publication type | A1 Journal article-refereed |
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Cite this
Majumdar, S., Majumdar, H. S., Aarnio, H., & Osterbacka, R. (2009). Hysteretic magnetoresistance in polymeric diodes. Physica Status Solidi: Rapid Research Letters, 3(7-8), 242-244. https://doi.org/10.1002/pssr.200903193